Asahi Glass Company, Limited

Agc Inc.

Hiroyuki Tomonaga

Kazuo Sunahara

Iori Yoshida

Satoshi Takemiya

Yoshihisa Beppu

Hirokazu Kodaira

Kumiko Takahashi

Yuichi Yamamoto

Takeshi Morimoto

Daisuke Kobayashi

Kazuya Hiratsuka

Masabumi Ito

Noriaki Shimodaira

Katsuaki Miyatani

Mitsuru Horie

Yutaka Hayami

To provide a coating solution for forming an ultraviolet-absorbing film which has mechanical durability such as abrasion resistance and which is little susceptible to deterioration of the ultraviolet-absorbing ability by use for a long period of time, and an ultraviolet-absorbing glass article having an ultraviolet-absorbing film formed by using such a coating solution, which has mechanical durability such as abrasion resistance and which is little susceptible to deterioration of the ultraviolet-absorbing ability by use for a long period of time. A coating solution which comprises a component derived from an epoxidized organooxysilane compound, a component derived from an organooxysilane compound which is a reaction product of a hydroxylated benzophenone compound and an epoxidized organooxysilane compound, and a component derived from an organooxysilane compound other than the above both organooxysilane compounds, and an ultraviolet-absorbing glass article obtained by using the coating solution.

Coating solution for forming ultraviolet-absorbing film, and ultraviolet-absorbing glass article

The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.

Single-crystal silicon-carbide substrate and polishing solution

A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.

Single crystal silicon-carbide substrate and polishing solution

To provide a liquid composition capable of forming a coating film which has sufficient ultraviolet-absorbing ability and infrared-absorbing ability. A liquid composition for forming a coating film comprising an infrared absorber selected from indium tin oxide, antinomy tin oxide and a composite tungsten oxide, an ultraviolet absorber selected from a benzophenone compound, a triazine compound and a benzotriazole compound, a dispersing agent having an acid value and/or an amine value, a binder component and a liquid medium, wherein the dispersing agent is contained in a content such that the product of the sum (mgKOH/g) of the acid value and the amine value of the dispersing agent, and the mass ratio of the dispersing agent to the infrared absorber, is from 2 to 30 (mgKOH/g).

Liquid composition and its production process, and glass article

There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.

Polishing method of non-oxide single-crystal substrate

A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.

Polishing agent and polishing method

Spots generated on a glass substrate after a polishing step are reduced. The present invention relates to a method for polishing a glass substrate including injecting a silica abrasive and a high-boiling solvent in a final glass substrate polishing step. The high-boiling solvent is preferably a solvent having a molecular weight of 300 or lower and a boiling point of 150&#xb0; C. or higher. As Examples of the high-boiling solvent having a molecular weight of 300 or lower and a boiling point of 150&#xb0; C. or higher includes ethylene glycol, propylene glycol and glycerine.

Method for polishing glass substrate and process for producing glass substrate

An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide as the main component and containing nitrogen in an amount of at least 2 at % based on Si and has a film thickness of from 200 to 3,000 nm.

Infrared shielding film-coated glass plate and process for its production

It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of BiO, from 4 to 64% of TiOand from 6 to 50% of BO, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

Process for producing fine particles of bismuth titanate

To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Composition for forming dielectric layer, MIM capacitor and process for its production

It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba, Sr, Ca, Pb, La, Kand Na, and B is at least one member selected from the group consisting of Ti, Zr, Nb, Taand Fe) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.

Liquid composition for forming ferroelectric thin film and process for producing ferroelectric thin film

A ultraviolet ray absorbent glass comprises a substrate glass, a ultraviolet ray absorbent film including as the major component at least one selected from the group consisting of zinc oxide, titanium oxide and cerium oxide, and an intermediate film having an intermediate refractive index which is between the refractive indices of the ultraviolet absorbent film and the substrate glass, the intermediate film being located between the ultraviolet absorbent film and the substrate glass, whereby iridescence by the ultraviolet ray absorbent film is reduced, and a heat reflecting function is imparted.

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Tokyo, Japan

Hiroyuki Tomonaga