Stanley Electric Co., Ltd

Dowa Electronics Materials Co., Ltd.

The University of Tokyo

Sumitomo Electric Industries, Limited

Ihi Corporation

Hiroyuki Togawa

Hidetaka Yamada

Masayuki Nakano

Masakazu Sugiyama

Toru Okazaki

Hidehiko Sugimoto

Toshio Takeda

Tomoya Oota

Mathew Manish

Norio Tasaki

A light-transmitting resin member is provided that can inhibit color appearance in which the light-transmitting resin member appears to be colored depending on a viewpoint position. Provided is a light-transmitting resin member, in at least a part of a surface of which a plurality of groove structures configured with a plurality of linear protrusion portions and a plurality of linear recess portions are formed and in which the linear protrusion portions and the linear recess portions extend in directions parallel with each other and the grooves are formed at a pitch at which transmittance of visible light incident at an incident angle in a predetermined range becomes approximately constant, the visible light being incident on a region, in which the grooves are formed, in the surface, the visible light being transmitted through the light-transmitting resin member.

Light-transmitting resin member

A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.

Semiconductor light-emitting element, and manufacturing method for same

A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and of a conductivity type opposite to the conductivity type of the first semiconductor layer. The light-emitting layer has: a base layer that has a composition subject to stress strain from the first semiconductor layer and a plurality of base segments formed in a random net shape; and a quantum well structure layer formed by embedding the base layer and composed of at least one quantum well layer and at least one barrier layer. The base layer has a plurality of sub-base layers composed of AlGaN with different Al compositions.

Semiconductor light-emitting element

A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.

Semiconductor light emitting diode and method of producing the same

A semiconductor light emitting diode of the present invention includes a semiconductor layer including a light emitting portion, and a pad electrode located on the semiconductor layer, the semiconductor light emitting diode further including, between the semiconductor layer and the pad electrode, a reflective portion including a light transmitting insulating layer serving as a current blocking layer located on the semiconductor layer, and a reflective layer located on the light transmitting insulating layer; a contact portion formed from an ohmic electrode in contact with the reflective portion, located on the semiconductor layer; and a conductive hard film between the reflective layer and the pad electrode, the conductive hard film having HV&#xd7;t&#x3e;630, where the Vickers hardness is HV (Hv) and the thickness is t (&#x3bc;m).

Semiconductor light emitting diode having a contact portion and a reflective portion

A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 &#x3bc;m to 50 &#x3bc;m.

An inductor-type synchronous machine having an axial gap structure, which has a shaft portion at the center thereof, the machine includes: a field-side stator which has a yoke made of a magnetic material and a field body protruding from the yoke in an axial direction of the shaft portion to form an N pole and an S pole in a radial direction; a rotor which has N pole inductors disposed so as to be opposed to the N pole formed by the field body and S pole inductors disposed so as to be opposed to the S pole formed by the field body; and an armature-side stator in which an armature coil is disposed so as to be opposed to the N pole inductors and the S pole inductors.

Growing community of inventors

Tokyo, Japan

Hiroyuki Togawa