Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Hiroyuki Tezuka

Yoshikazu Katoh

Hiroki Mouri

Kouichi Nagano

A nonvolatile memory device comprises: a nonvolatile memory; a resistance-time converter that outputs an end signal at timing according to a resistance value of the nonvolatile memory; and a time-digital converter that measures the time from input of a start signal to input of the end signal and converts the measured time into a digital value. The time-digital converter includes: a ring delay circuit that includes delay elements connected in a ring configuration; a counter circuit that counts the number of times of a rising edge or a falling edge in output of one of the delay elements; a first memory circuit that stores, based on the end signal, outputs of the delay elements as first data; and a second memory circuit that stores, based on the end signal, a count value of the counter circuit as second data.

Nonvolatile memory device including nonvolatile memory and resistance-time converter, and integrated circuit card including nonvolatile memory device

A phase adjuster arranges phases of waveforms of a complex signal after orthogonal transform. An edge detector detects an edge of the complex signal after phase adjustment. A phase shift detector detects phase shift of an output signal of the edge detector between the in-phase signal and the quadrature signal after the orthogonal transform, and outputs a phase error signal (PE). The oscillator connected to mixers and a shifter to perform the orthogonal transform includes a phase adjustment section adjusting an edge of a voltage controlled oscillator (VCO) clock based on the phase error signal (PE) and correcting the phase shift of an original signal.

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Kyoto, Japan

Hiroyuki Tezuka