Hitachi Metals, Ltd.

Proterial, Ltd.

Hiroyuki Teshima

Hisayuki Imamura

Suguru Fujita

Junichi Watanabe

Youichirou Kaga

Makoto Sasaki

Shigeyuki Hamayoshi

Shinichi Kazui

Akihito Mizuno

Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surfaceof a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surfaceis 0.98 or higher. The void fraction vc of the central area of the main surfaceis 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cmor higher, the density de of the end area is 3.160 g/cmor higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.

Silicon nitride sintered substrate, silicon nitride sintered substrate sheet, circuit substrate, and production method for silicon nitride sintered substrate

A method for producing a ceramic circuit substrate comprising the steps of forming brazing regions each comprising brazing material powder and an organic binder on a ceramic substrate; setting metal plates on the ceramic substrate via the brazing regions, and heating the ceramic substrate, the brazing regions and the metal plates to bond the metal plates to the ceramic substrate via brazing layers made of the brazing material, thereby forming a bonded body; and cleaning the bonded body with a hypochlorite-containing agent.

Ceramic circuit substrate and its production method

Growing community of inventors

Tokyo, Japan

Hiroyuki Teshima