Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Hiroyuki Takashino

Shigenobu Maeda

Toshihide Oka

It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor device. An NMOS transistor Qand a PMOS transistor Qwhich are formed in an NMOS formation region Aand a PMOS formation region Arespectively have Ppocket regionsand Npocket regionsin vicinal regions of extension portionsandof Nsource-drain regionsand Psource-drain regions, respectively. On the other hand, an N-type variable capacitance Cand a P-type variable capacitance Cwhich are formed in an N-type variable capacitance formation region Aand a P-type variable capacitance formation region Arespectively do not have a region of a reverse conductivity type which is adjacent to extraction electrode regions corresponding to the Ppocket regionsand the Npocket regions

Semiconductor device including insulated gate type transistor and insulated gate type variable capacitance, and method of manufacturing the same

Semiconductor device including insulated gate type transistor and insulated gate type capacitance having protruded portions

A plurality of ONO films are provided in a matrix on a substrate surface. Gate electrodes are provided on each of the ONO films. Further provided in the substrate surface are n-type impurity layers and p-type impurity layers. Each of the p-type impurity layers is arranged between the n-type impurity layers. In a plan view of the substrate surface, the n-type impurity layers and the p-type impurity layers are arranged to surround the respective ONO films and the gate electrodes.

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Tokyo, Japan

Hiroyuki Takashino