Sumco Corporation

Pentas Inc.

Allm Inc.

Hiroyuki Takao

Takashi Suzuki

Shinsuke Sadamitsu

Yuichi Murayama

Shigeru Yoneyama

Teppei Sakano

Kazunari Kurita

Masataka Hourai

Nobumitsu Takase

Masataka Horai

Koji Sueoka

Tadashi Masuoka

Fernando Javier Wong Kwai Ben

Toshimitsu Furuchi

Harunobu Endo

Shogo Kaku

Horacio Sanson Giraldo

To estimate the length of a stent implanted in a blood vessel after implantation of the stent. A stent length estimation deviceincludes an implantation start position specifying means for receiving, from a user, a designation of an implantation start position of an aneurysm treatment stent which is formed by helicoidally braiding a plurality of metal wires and specifying the implantation start position of the stent on a three-dimensional blood vessel image which represents a three-dimensional shape of the blood vessel, an implantation direction specifying means for receiving a designation of an implantation direction of the stent from the user and specifying the implantation direction of the stent on the three-dimensional blood vessel image, a stent specification specifying means for specifying a diameter of the stent after expanded, a length of the stent after expanded, the number of wires of the stent, and a pitch length of the wires of the stent after expanded as a specification of the stent, and an implanted stent length calculating means for calculating a length of the stent which is implanted and expanded along with a blood vessel diameter on the basis of the specification of the stent specified by the stent specification specifying means and the blood vessel diameter of the blood vessel in the implantation direction specified by the implantation direction specifying means from the implantation start position specified by the implantation start position specifying means.

Stent length estimation device, stent length estimation program, and method of estimating length of stent

An object of the present disclosure is to improve setting accuracy of site regions in brain image data. A brain image data processing apparatusincludes: a brain image data reading unit for reading brain image data in which the site regions for identifying each site are set at positions corresponding to each site of a brain; a probability calculation unit for calculating a probability that each pixel is included in each site region based on a distance between each pixel and each site region for each pixel not included in any site region in the brain image data read by the brain image data reading unit; and a determination unit for determining which site region each pixel belongs to, based on the probability calculated by the probability calculation unit.

Brain image data processing apparatus, brain image data processing method, and brain image data processing program

A control device defines, for three-dimensional blood vessel data of a blood vessel corresponding to a branched center line, a cylindrical coordinate system, thereby converting this into blood vessel data in an orthogonal coordinate system. The control device uses a coordinate value of the coordinate axis in a radial direction at a first coordinate value of the coordinate axis in a center line direction and a coordinate value of the coordinate axis in the radial direction at a second coordinate value of the coordinate axis in the center line direction, thereby interpolating a coordinate value of the coordinate axis in the radial direction between the first coordinate value and the second coordinate value. The control device converts, after interpolation, the blood vessel data into blood vessel data in the cylindrical coordinate system.

Blood vessel image processing apparatus, blood vessel image processing program, and blood vessel image processing method

The present invention is intended to convert a video input from a surgical microscope into a three-dimensional video. A microscope video processing deviceincludes: a microscope video acquisition unit that acquires a microscope video output from an surgical microscope; a video conversion unit that converts the microscope video acquired by the microscope video acquisition unit into a three-dimensional video; a surgical instrument position determination unit that determines the position of a surgical instrument in the three-dimensional video converted by the video conversion unit; a distance calculation unit that calculates a distance between a preset patient's preset surgery target region and the position of the surgical instrument determined by the surgical instrument position determination unit; and a video output unit that outputs to a display unit an output video in which distance information indicative of the distance calculated by the distance calculation unit is displayed in the three-dimensional video.

Microscope video processing device and medical microscope system

By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others.

Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers

A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on the side of a device manufacturer. In order to implement the above, a high-temperature heat treatment at 1100&#xb0; C. or higher is performed on a carbon doped high-resistance and high-oxygen silicon wafer in which specific resistivity is 100 &#x3a9;cm or more and a carbon concentration is 5&#xd7;10to 5&#xd7;10atoms/cmso that a remaining oxygen concentration becomes 6.5&#xd7;10atoms/cmor more (Old-ASTM). As this high-temperature treatment, an OD treatment for forming a DZ layer on a wafer surface, a high-temperature annealing treatment for eliminating a COP on the surface layer, a high-temperature heat treatment for forming a BOX layer in a SIMOX wafer manufacturing process and the like can be used.

High-resistance silicon wafer and process for producing the same

Growing community of inventors

Tokyo, Japan

Hiroyuki Takao