Toyoda Gosei Co., Ltd.

Other

Toyota Jidosha Kabushiki Kaisha

Nhk Spring Co., Ltd.

Sumita Optical Glass, Inc.

Hiroyuki Tajima

Yosuke Tsuchiya

Shota Shimonishi

Chiharu Totani

Shigeo Takeda

Akira Sengoku

Tomohiro Miwa

Fumitake Kobayashi

Yutaka Nagai

Syota Shimonishi

Osamu Fukawatase

Minoru Shibata

Hiroki Nakajima

Hikaru Ando

Takahiko Sato

Yoshiyuki Sakuma

Takeshi Hosokawa

Tadao Tanaka

Mitsuyoshi Ohno

Akiyoshi Nagano

Motoyuki Tanaka

Masakazu Hashimoto

Goro Takahashi

Shuji Inui

Takeaki Kato

Yasushi Kubota

Hidenori Yokoyama

Takashi Hosokawa

Katsunori Noto

Yasuyuki Osawa

Masamichi Aono

Takuya Ohtsuka

Satoshi Wada

Hideaki Kato

Masahiro Takimoto

Hiroyoshi Yamaguchi

Miki Moriyama

Yoshio Mizuno

Toru Koyama

Toshimasa Hayashi

Shigeru Yabuya

Toshinori Takahashi

Koji Tasumi

Kazumasa Suzuki

Seiji Yamaguchi

Mitsuhiro Nawashiro

Hideki Kokubu

Hiroshi Ishiyama

Hiroki Watanabe

Takuji Nagata

Kazuya Aida

Yuhki Ito

Makoto Sato

Masakata Koseki

Hisao Yamaguchi

Tadanori Hisamoto

Toshiaki Mori

Toshikatsu Togawa

Yuichi Yano

Shinichi Horibata

Shuji Miura

Atsushi Tsuzuki

Takeshi Matsushima

Hiroshi Kondo

Nobuyasu Yamada

Yukiko Yabuta

Tomoko Suzuki

Yoshitaka Terada

A manufacturing method of a side view type light emitting device including a package body made of a synthetic resin material, the manufacturing method includes: providing an injection molding mold, for injection-molding the package body, including: a first mold provided with a first convex part for forming an upper surface side flat part on an upper surface of the package body; and a second mold provided with a first concave part for forming the upper surface side flat part; and fitting the first concave part around the first convex part so as to enter a liquid tight state with no space, injecting the synthetic resin material into each of the first and second molds so as to be filled therein, and hardening the synthetic resin material to form the package body in a state in which the first mold and the second mold are aligned with each other.

Manufacturing method of light emitting device

A method of manufacturing a light emitting device, includes: mounting an LED chip on a substrate; forming a translucent sealing layer for sealing the LED chip; forming a protective layer on the sealing layer; forming a groove, which penetrates the substrate and the sealing layer, using a blade from a side opposite to the side of the substrate mounted with the LED chip, the groove being formed to extend to a lower surface or an inside of the protective layer; filling the groove with a reflector material; and removing and separating a portion of the protective layer in which at least the groove is formed, wherein the blade has a shape tapered toward an edge.

Method of manufacturing light emitting device

Light emitting diode

A light emitting device includes a heat dissipation board, a wiring board that is bonded and fixed to the heat dissipation board and formed with a through-hole, a semiconductor light emitting element that is mounted on a face of the heat dissipation board, the face being exposed through the through-hole of the wiring board, and a light reflecting member that covers a portion of an inner peripheral wall surface of the through-hole of the wiring board, the portion being squarely opposed to a side surface of the semiconductor light emitting element.

Light emitting member having a wiring board with through hole exposing a light emitting semiconductor element with a light reflecting member covering a peripheral wall portion of the through hole

A method of manufacturing a light-emitting device including a light-emitting element mounted on a substrate and sealed with a glass. The method includes heating the glass by a first mold that is heated to a temperature higher than a yield point of the glass, the glass contacting the first mold, and pressing the glass against the light-emitting element mounted on the substrate supported by a second mold to seal the light-emitting element with the glass.

Method of manufacturing light-emitting device

A light-emitting device includes a base material having a conductor layer on a surface thereof, the conductor layer being configured to be connected to an external power source, a light-emitting element mounted on the base, a phosphor layer arranged above the light-emitting element, and a resin layer contacting both of the phosphor layer and the conductor layer and containing heat-conductive particles dispersed therein. The heat-conductive particles have a thermal conductivity of not less than 100 W/m&#xb7;K and an insulator property or a semiconductor property.

Light-emitting device and method of manufacturing the same

A light-emitting device includes a thermally conductive substrate, a wiring electrode formed on the thermally conductive substrate, a resist formed on the wiring electrode except a terminal thereof, and a light-emitting element that is disposed in an element mounting region of the thermally conductive substrate and electrically connected to the terminal of the wiring electrode. A heat dissipation hole is formed in a region of the resist outside the element mounting region so as to expose a surface of the thermally conductive substrate.

Light-emitting device including a heat dissipation hole

A light-emitting device includes a light-emitting element mounted on a lead frame, and a sealing material sealing the light-emitting element and having a thickness of not more than 1 mm and including a silicone resin as a main component. The sealing material includes a first gas barrier layer that a physical property value obtained by dividing a difference between a value of an average spin-spin relaxation time ofH nuclei at a resonance frequency of 25 MHz at 140&#xb0; C. and that at 25&#xb0; C. by 115 is not more than 3.5 and the average spin-spin relaxation time at 140&#xb0; C. is not more than 500 &#x3bc;sec.

Sealing material for light-emitting device having gas barrier property

The present invention provides a light-emitting device which includes a plurality of LED chips mounted on a chip mount surface of a substrate provided with a wiring pattern. In the light-emitting device, the wiring pattern is provided so as to meet the following conditions (a), (b), and (c). (a) The wiring pattern divides the chip mount surface into at least three divided areas in a radial fashion from a center of the chip mount surface, and includes radial elements and circumferential elements so as to surround divided areas. (b) Of two radial elements and one circumferential element which surround each divided area as viewed from the individual divided area, one or two elements form part of a positive electrode pattern, and the remainder forms part of a negative electrode pattern. (c) There is only one radial element between adjoining ones of the divided areas.

Light-emitting device

An LED mounting substrate includes a base substrate, a conductive pattern formed on the base substrate and including a recessed portion on an upper surface thereof, and a light reflecting film formed in an inter-pattern gap of the conductive pattern on the base substrate and in the recessed portion of the conductive pattern.

LED mounting substrate and method of manufacturing the same

A method for mounting a luminescent device having a mount layer on a substrate, comprising the steps of coating a metallic nano-particle paste on the substrate, disposing the mount layer of the luminescent device on the metallic nano-particle paste, and heating the mount layer and the metallic nano-particle paste to form an alloy, thereby bonding the luminescent device and the substrate.

Method for mounting luminescent device

A method of manufacturing a semiconductor device comprises a mounting step of mounting a semiconductor element having an Au&#x2014;Sn layer on a substrate, wherein the mounting step includes a paste supplying step of supplying an Ag paste having an Ag nanoparticle onto the substrate, a device mounting step of mounting a side of the Au&#x2014;Sn layer of the semiconductor element on the Ag paste, and a bonding step of alloying the Au&#x2014;Sn layer and the Ag paste to bond the semiconductor element to the substrate, wherein the Au&#x2014;Sn layer has a content rate of Au of 50 at % to 85 at %.

Method of manufacturing semiconductor device and semiconductor device

An object of the present invention is to provide a LED module, capable of protecting LED chips from an excessive voltage, at low cost. An LED module for lighting includes a wiring substrate having a plurality of wiring patterns formed thereon, and a plurality of LED chips connected to the wiring patterns so as to constitute a series circuit or a series-parallel circuit. In the LED module, the wiring patterns comprises an anode side wiring pattern constituting an anode side electrode of the circuit, and a cathode side wiring pattern constituting a cathode side electrode of the circuit, the anode side wiring pattern and the cathode side wiring pattern are disposed to surround connection regions of the wiring patterns with the LED chips, and forms guard electrodes, and both edge portions of the anode side wiring pattern face both edge portions of the cathode side wiring pattern with gaps, respectively.

LED module for lighting

Growing community of inventors

Kiyosu, Japan

Hiroyuki Tajima