Sanyo Electric Co., Ltd.

Hiroyuki Suzuki

Takeshi Abe

Yoshio Ozawa

Kazuo Okada

Masahiro Furukawa

Toshimitsu Taniguchi

Kazuaki Mizukami

Mitsuhiro Masuda

Kazuo Ikegami

Syuichi Yamashita

Masashi Yasuda

Yasuharu Kurogi

Katsuhiko Iizuka

Tomonori Mori

Hiroyuki Dobashi

Takayoshi Honda

Yasushi Kamada

The present invention provides for a nonaqueous electrolyte secondary battery and a producing method therefor, in which a grooved portion provided in an upper portion of the outer casing of the nonaqueous electrolyte secondary battery protrudes toward the inner portion of the outer casing, a group of electrodes being housed in the outer casing, a positive electrode and a negative electrode being wound in a spiral manner while facing each other through a separator in the group of electrodes, and a sealing member is placed on the upper portion of the grooved portion through insulated packing to seal the opening of the outer casing in an airtight manner, and whereby a circular insulating plateprovided with an arced openingand cut portionsandis arranged between the upper portion of the group of electrodes and the lower surface of the grooved portion, the cut portionsandextending from end portionsandof the opening, and the inner peripheral side of the cut portionsandof the circular insulating plate is raised from the outer peripheral side of the cut portionsand. Such insulating plate does not adversely affect the injection property of the electrolytic solution used in producing the nonaqueous electrolyte secondary battery as to provide it with excellent battery performance and excellent productivity.

Nonaqueous electrolyte secondary battery and producing method thereof

The invention is directed to increasing the number of semiconductor dice obtained from one semiconductor wafer and enhancing the reliability and yield of the semiconductor dice when the semiconductor dice as products and TEG dice are formed on the semiconductor wafer. TEG die pattern regions are respectively placed on the top and bottom placing a plurality of semiconductor die pattern regions regularly arrayed in a longitudinal direction therebetween. The vertical length of each of the TEG die pattern regions is substantially half of the vertical length of the semiconductor die pattern region. With this reticle, two adjacent TEG die patterns respectively formed by two continuous exposure processes form the area of one semiconductor die pattern. In this manner, the area of the TEG die patterns on the semiconductor wafer is reduced and the yield of the semiconductor dice is increased correspondingly.

Reticle, semiconductor die and method of manufacturing semiconductor device

An LDD structure and a silicide layer are formed without a reduction in thickness of a silicon substrate or a carbon contamination. Forming a spacer on a sidewall of a gate electrode is performed in two process steps, i.e. dry-etching and wet-etching. Also, a silicon nitride film used as a buffer film in injection of high dose of impurities is removed by wet-etching. As a result, the reduction in thickness of the silicon substrate and the carbon contamination can be prevented. In addition, variation in depth of the high and low impurity concentration regions and silicide forming region with locations on the wafer can be suppressed because of high selection ratio available with the wet-etching.

Manufacturing method of semiconductor device

In a gas compressor-expander according to the invention, a partition wall between a space in the rear of a piston and a crank chamber has a piston rod slidably extending therethrough and a seal device surrounding the piston rod . The seal device comprises a first seal member having a high sealing property against a flow from the crank chamber toward the space , an intermediate chamber provided in the vicinity of the first seal member at one side thereof toward the space, a second seal member disposed in the vicinity of the intermediate chamber at one side thereof toward the space, and a communication channel for holding the intermediate chamber and the crank chamber in communication with each other. This construction gives a prolonged life to the seal device and prevents impairment of the refrigeration capacity of the gas compressor-expander.

Sealing device for gas compressor-expander

A failure diagnosing system for an absorption chiller including an evaporator, absorber, etc. comprises a plurality of sensors for measuring at least one representative temperatures of each of two fluids participating in heat exchange in a specified heat exchange unit, and an arithmetic unit for receiving measurement data from the sensors. The arithmetic unit comprises a circuit for calculating an actual temperature difference using a simple calculation equation defined by a linear expression, a circuit for calculating the amount of heat exchange by the absorber, and a circuit for calculating the degree of abnormality of the absorber by comparing the actual temperature difference with an ideal temperature difference for the same amount of heat exchange as the calculated amount.

Failure diagnosing system for absorption chillers

Growing community of inventors

Gunma, Japan

Hiroyuki Suzuki