Sanyo Electric Co., Ltd.

Sanyo Semiconductor Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Eelctric Co., Ltd.

Hiroyuki Shinogi

Takashi Noma

Katsuhiko Kitagawa

Hiroshi Yamada

Shinzo Ishibe

Nobuyuki Takai

Ryoji Tokushige

Yukihiro Takao

Kazuo Okada

Akira Suzuki

Yuichi Morita

Noboru Okubo

Mitsuru Okigawa

Yoshinori Seki

Shigeki Otsuka

Takayasu Otagaki

Tatsuya Ando

Keiichi Yamaguchi

Koichi Kuhara

Toshimitsu Taniguchi

Hisayoshi Uchiyama

Katsu Horikoshi

Seiichi Ono

An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting bodyhaving a penetration holepenetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substratewith an adhesive layerbeing interposed therebetween. A device elementand wiring layersare formed on the front surface of the semiconductor substrate. A second supporting bodyis attached to the first supporting bodywith an adhesive layerbeing interposed therebetween so as to cover the penetration hole. The device elementis sealed in a cavitysurrounded by the semiconductor substrate, the first supporting bodyand the second supporting body

Semiconductor device and method of manufacturing the same

A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

Semiconductor device and manufacturing method thereof

The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layerdue to a blue-violet laser.

The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.

Semiconductor device

Semiconductor dice judged as good dice are stacked on a base substrate in which through holes and through hole electrodes are formed. Next, a protection layer to cover the semiconductor dice is formed. It is preferable that the protection layer is composed of a plurality of resin layers (a first resin layer and a second resin layer) that are different, in hardness from each other. Then, a conductive terminal that is connected with the through hole electrode is formed on a back surface of the base substrate. Next, the second resin layer and the base substrate are cut along predetermined dicing lines and separated into individual semiconductor devices in chip form. A process step of separation into the semiconductor devices is performed while each of the semiconductor dice is mounted on the base substrate in wafer form.

Semiconductor device having stacked dice disposed on base substrate

This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate. The adhesive material is gathered around the columnar structuresby itself to form an adhesive layer. Therefore, in contrast, the adhesive layerdoes not deposit in a region where the cavity is to be formed. Then, the supporting memberis bonded through the columnar structuresand the adhesive layer. By bonding the supporting member, there is formed the cavitysurrounded with the semiconductor substrate, the columnar structuresand the supporting member

Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

Method of manufacturing semiconductor device with wiring on side surface thereof

This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device componentand a pad electrodeelectrically connected with the device componentare formed on a semiconductor substrate. A supporting memberis bonded to a surface of the semiconductor substratethrough an adhesive layer. There is formed a through-holein the supporting memberpenetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole. A depressed portionis formed in a partial region of the top surface of the supporting member. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor devicein an upper layer to an inside of the depressed portion

The invention is directed to providing a smaller semiconductor device formed as an optical sensor including a light receiving portion and a light emitting portion. A light receiving portion and a light emitting portion are disposed on a front surface of a semiconductor substrate for forming a semiconductor die, and a supporting body is attached to these so as to face these with an adhesive being interposed therebetween. A first opening exposing the light receiving portion from the front side of the supporting body is provided, and in a separated position therefrom, a second opening exposing the light emitting portion from the front side of the supporting body is provided. A first electrode and a second electrode are further disposed on the front surface of the semiconductor substrate, and bump electrodes electrically connected to these are disposed on the back surface of the semiconductor substrate.

The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.

Manufacturing method of semiconductor device with smoothing

A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.

The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semiconductor integrated circuit or the like in the semiconductor die, a supporting body formed on the pad electrodes, an insulation film formed on the side and back surface portions of the semiconductor die, wiring layers connected to the back surfaces of the pad electrodes and extending from the side surface portion onto the back surface portion of the semiconductor die so as to contact the insulation film, and a second protection film formed on the side surface portion of the supporting body.

The invention enhances moisture resistance between a supporting body and an adhesive layer to enhance the reliability of a semiconductor device. A semiconductor device of the invention has a first insulation film formed on a semiconductor element, a first wiring formed on the first insulation film, a supporting body formed on the semiconductor element with an adhesive layer being interposed therebetween, a third insulation film covering the back surface of the semiconductor element onto the side surface thereof and the side surface of the adhesive layer, a second wiring connected to the first wiring and extending onto the back surface of the semiconductor element with the third insulation film being interposed therebetween, and a protection film formed on the second wiring.

A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

Growing community of inventors

Gunma, Japan

Hiroyuki Shinogi