Murata Manufacturing Co., Ltd.

Hiroyuki Seto

Makoto Inai

Katsuhiko Tanaka

Michihiro Murata

Yutaka Kishimoto

Hiroyuki Nakano

Osamu Nakagawara

Hisashi Ariyoshi

Susumu Fukuda

Eiji Tai

Shogo Yoshida

Fujio Okui

A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5&#xb0; or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

Transparent conductive film and method for manufacturing the same

A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.

Electrode forming method and field effect transistor

The invention provides a semiconductor device with a passivation film provided on a surface thereof, said passivation film comprising a SiON layer in contact with the surface of said semiconductor device, and a Si N layer provided at the outer side of said SiON layer, chraracterized in that said passivation film has an outermost layer of Si N and said outermost layer has a portion in contact with said semiconductor device or the exposed area of said SiON layer is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.

Semiconductor device with a passivation film

A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

Field effect transistor

A thin film EL element comprises a substrate, an electrode formed on the substrate, a ZnO insulation layer which is formed on the electrode and which has crystalline orientability, a light emitting layer formed on the ZnO insulation layer having crystallinity, and a second electrode formed on the light emitting layer. The ZnO insulation layer having crystalline orientability, is formed as a sublayer for the light emitting layer, and is made of a material having its c-axis oriented perpendicular to the substrate.

Thin film EL element having a crystal-orientable ZnO sublayer for a

A one-dimensional pyroelectric sensor array comprises (1) a base plate made of a pyroelectric material; a plurality of strip elements made of pyroelectric material having a heat-sensitive region at a free end thereof, each supported only at the other end to the base plate to form an integrated structure with the base plate; and (2) one pair of detecting electrodes formed on the heat-sensitive region of the free end of each strip element.

Growing community of inventors

Yasu, Japan

Hiroyuki Seto