Toyota Jidosha Kabushiki Kaisha

Toyota School Foundation

Hiroyuki Sakaki

Tomoyoshi Kushida

Yoshitaka Nagasato

Naotaka Iwata

Masato Ohmori

In a semiconductor device having a heterojunction type superjunction structure, a drain portion and a source portion are electrically connected to one of a two-dimensional electron gas layer and a two-dimensional hole gas layer, and a gate portion is prevented by an insulating region from directly contacting the one of the two-dimensional election gas layer and the two-dimensional hole gas layer.

Semiconductor device

A semiconductor apparatus () includes: a layered structure () that includes double junction structures that have a first junction () where a wide-bandgap layer () and a narrow-bandgap layer () are layered on each other and a second junction () where a narrow-bandgap layer () and a wide-bandgap layer () are layered on each other, and electrode semiconductor layers () are joined to each layer of the layered structure. Each double junction structure includes a pair of a first region () that has negative fixed charge and a second region () that has positive fixed charge. The first region is closer to the first junction than to a center of the wide-bandgap layer. The second region is closer to the second junction than to the center of the wide-bandgap layer. A 2DEG or a 2DHG is formed at each junction. The semiconductor apparatus functions as an electric energy storage device such as a capacitor.

Growing community of inventors

Nagoya, Japan

Hiroyuki Sakaki