Rohm Co., Ltd.

Hiroyuki Sakairi

Yuki Nakano

Ryota Nakamura

Kenichi Yoshimochi

Koshun Saito

Yasufumi Matsuoka

Hirotaka Otake

Tatsuya Yanagi

Naotaka Kuroda

Atsushi Yamaguchi

Takukazu Otsuka

Ken Nakahara

Yusuke Nakakohara

A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.

Semiconductor device

A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

Switching device

Semiconductor device Aincludes: first terminalA and second terminalB; first switching elementA including first gate electrodeA, first source electrodeA and first drain electrodeA; and second switching elementB including second gate electrodeB, second source electrodeB and second drain electrodeB. First switching elementA and second switching elementB are connected in series to each other between first terminalA and second terminalB. Semiconductor device Aincludes first capacitorA connected in parallel to first switching elementA and second switching elementB between first terminalA and second terminalB. First switching elementA and second switching elementB are aligned in y direction. First capacitorA overlaps with at least one of first switching elementA and second switching elementB as viewed in z direction. These arrangements serve to suppress surge voltage.

A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor Mincludes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor Min a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor Mbased on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

Method for measuring current-voltage characteristic

A semiconductor device includes a conductive member including first, second and third conductors mutually spaced, a first semiconductor element having a first obverse surface provided with a first drain electrode, a first source electrode and a first gate electrode, and a second semiconductor element having a second obverse surface provided with a second drain electrode, a second source electrode and a second gate electrode. The first conductor is electrically connected to the first source electrode and the second drain electrode. The second conductor is electrically connected to the second source electrode. As viewed in a first direction crossing the first obverse surface, the second conductor is adjacent to the first conductor in a second direction crossing the first direction. The third conductor is electrically connected to the first drain electrode and is adjacent to the first conductor and the second conductor as viewed in the first direction.

A method for measuring a current-voltage characteristic (Id&#x2212;Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor Mincludes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor Min a switching transient state, and acquiring the current-voltage characteristic (Id&#x2212;Vds characteristic) of the transistor Mbased on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

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Kyoto, Japan

Hiroyuki Sakairi