Globalwafers Japan Co., Ltd.

Hiroyuki Saito

Koji Izunome

Takeshi Senda

Susumu Maeda

Kazuhiko Kashima

Koji Araki

Hiromichi Isogai

Haruo Sudo

Tatsuhiko Aoki

Eiji Toyoda

Provided is a method for measuring interstitial oxygen concentration in a silicon wafer easily and sensitively using FT-IR. The invention provides a method for measuring an extremely low oxygen concentration of &#x3c;1.0&#xd7;10atoms/cmin a single-crystal silicon wafer, the method comprising: step 1 of forming a SiOfilm, nitride film or PE film on each of a measurement wafer, interstitial-oxygen-free reference wafer and standard wafer with known interstitial oxygen concentration; step 2 of measuring IR spectra of the three wafers; step 3 of determining a difference transmission spectrum from the IR spectrum of measurement wafer and that of reference wafer and determining the intensity of an absorption peak corresponding to interstitial oxygen; and step 4 of comparing the peak intensity of the interstitial oxygen and that of standard wafer and calculating the interstitial oxygen concentration in measurement wafer from ratio to the interstitial oxygen concentration of standard wafer.

Method for measuring extremely low oxygen concentration in silicon wafer

A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface regionwhich is a defect-free region and a bulk regionincluding void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

Silicon wafer and method for heat-treating silicon wafer

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Niigata, Japan

Hiroyuki Saito