Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Canon Kabushiki Kaisha

Hiroyuki Ozaki

Kenichi Hayashi

Hisashi Kawafuji

Tatsuyuki Takeshita

Nobuhito Funakoshi

Shinya Nakagawa

Akio Saito

Masatoshi Katayama

Kazuhiro Tada

Takanori Kawanaka

Eitetsu Igawa

Satoshi Ishitobi

Naoto Himura

Shinya Nishi

Yusuke Mitsui

A reception device includes a measurement unit that measures a first number of times for which a first phase and a first reverse phase based on a differential signal obtained by amplifying a signal based on noise intersect with each other, the first reverse phase being a reverse phase of the first phase, an oscillator that transmits a first signal, a comparison unit that compares the first number of times with a predetermined first reference value, and a signal output unit that outputs a second signal indicating that an optical signal has been received when the first number of times and the first reference value coincide with each other. The measurement unit resets the first number of times when the first signal is received.

Reception device

An optical transmitter includes: a semiconductor laser unit that outputs laser light of first output power and outputs a monitor current; a casing of an optical module that holds optical fiber; a monitor current detection unit that generates a monitor voltage; a laser driving unit that controls a laser driving current; a storage unit that stores information based on a result of a measurement of a ratio of second output power with respect to the first output power; a target voltage determination unit that changes the target voltage based on a detected temperature of a temperature sensor and the information based on the result of the measurement; and a power monitor value determination unit that generates a power monitor value indicating the second output power to be transmitted to a host device using the detected temperature and the information based on the result of the measurement.

Optical transmitter

An optical transceiver includes an optical component () whose ground is integrated with a signal ground. The optical transceiver includes a conductor () that is electrically connected to the optical component (), and a sheet-like insulator () disposed between the conductor () and a housing () such that a main surface thereof is positioned along an inner wall of the housing (), and separating the signal ground and a frame ground on the side of the housing () from each other.

Optical transceiver

A semiconductor device includes a pair of power chips, an IC chip, a plurality of leads one of which having a die pad on which the power chips are mounted and another one having a die attach portion on which the IC chip is mounted, a resin sheet firmly adhered to one side of the die pad, and a resin casing made by molding operation to encapsulate the power chips, the IC chip and the resin sheet by a resin in such a manner that one surface of the resin sheet opposite the die pad is exposed to the exterior of the resin casing. The resin casing has a groove formed in one surface opposite the exposed surface of the resin sheet, the groove extending parallel to the resin sheet and perpendicular to a runner through which the resin was supplied in the molding operation.

Semiconductor device and mold for resin-molding semiconductor device

The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold. The resin sheet may include a metal foil which is disposed to the second surface.

Method for producing semiconductor device and semiconductor device

A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.

Semiconductor device and method for producing the same

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Tokyo, Japan

Hiroyuki Ozaki