Pioneer Corporation

Pioneer Electronic Corporation

Other

Pioneer Electric Corporation

Showa Denko K.k.

Hiroyuki Ota

Atsushi Watanabe

Takanori Maeda

Toshiyuki Tanaka

Mamoru Miyachi

Yoshinori Kimura

Kiyofumi Chikuma

Hirokazu Takahashi

Mitsuru Nishitsuka

Kazuhiko Sato

Norikazu Ito

Isamu Akasaki

Atsushi Onoe

Hiroshi Amano

Satoshi Miyaguchi

Masayuki Sonobe

Hitoshi Sato

Atsuya Ito

Tetsuo Fujii

An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layerof a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrateis provided on the grown layer. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Semiconductor light-emitting device and fabrication method thereof

An information recording/reproducing apparatus of the invention is equipped with an objective lens, a light source and a variable optical element having a grating which demonstrates a piezo-electric effect by means of an electric field. The light source emits and irradiates a laser beam onto the grating to generate a 0th order diffraction beam and +/&#x2212; 1st order diffraction beams in accordance with first order diffraction efficiency, and the objective lens converges the 0th diffraction beam and +/&#x2212; 1st order diffraction beams which are irradiated onto an information recording medium for the purpose of information recording or information reproducing. By controlling an electric field applied to the grating, the first order diffraction efficiency of the grating is adjusted, whereby light beams are generated which have power levels appropriate for various kinds of information recording media.

Variable optical element, a pickup apparatus having the variable optical element, and an information recording and reproducing apparatus having the pickup apparatus

A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.

Nitride semiconductor laser device and method for manufacturing the same

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Group III nitride compound semiconductor laser and manufacturing method thereof

An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in wavelength, light emission point, beam shape, light emission power, longitudinal mode and so on, by switching the direction of the voltage applied to the device. There is provided the semiconductor laser device including first and second laser units, each unit having a ridge type structure and each unit comprising a multilayer structure body made of at least an n-type semiconductor layer, an active layer and a p-type semiconductor layer deposited in this order, and a p-side electrode and an n-side electrode, wherein the p-side electrode and the n-side electrode of the first laser unit and the n-side electrode and the p-side electrode of the second laser unit are electrically connected, respectively.

Semiconductor laser device providing laser light of two wavelengths and method of fabricating the same

A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (Al Ga ) In N (0&lE;x&lE;1, 0&lE;y&lE;1) layered in order on a ground layer (Al Ga ) In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

Nitride semiconductor laser and method of fabricating the same

A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.

Nitride semiconductor device and method for manufacturing the same

The disclosure is a method of manufacturing a nitride semiconductor laser wherein a plurality of crystal layers made of group III nitride semiconductors, including an active layer, are successively stacked on an underlayer. The method includes the steps of forming the plurality of crystal layers on the underlayer formed on a substrate, forming an electrode layer on the outermost surface of the crystal layers, plating a metal film onto the electrode layer, irradiating an interface between the substrate and the underlayer with light through the substrate toward so as to form a region of decomposed substances of the nitride semiconductor, delaminating the underlayer that supports the crystal layers from the substrate along the decomposed substance region, and cleaving the underlayer with the crystal layers so as to form cleaved planes constituting a laser resonator.

Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate

An information recording/reproducing apparatus of the invention is equipped with an objective lens, a light source and a variable optical element having a grating which demonstrates a piezo-electric effect by means of an electric field. The light source emits and irradiates a laser beam onto the grating to generate a 0th order diffraction beam and &plus;/&minus; 1st order diffraction beams in accordance with first order diffraction efficiency, and the objective lens converges the 0th diffraction beam and &plus;/&minus; 1st order diffraction beams which are irradiated onto an information recording medium for the purpose of information recording or information reproducing. By controlling an electric field applied to the grating, the first order diffraction efficiency of the grating is adjusted, whereby light beams are generated which have power levels appropriate for various kinds of information recording media.

Method for manufacturing a nitride semiconductor device and device manufactured by the method

Nitride semiconductor light emitting device and manufacturing method thereof

A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.

Nitride-based semiconductor light emitting device and manufacturing method therefor

A method for fabricating a nitride-semiconductor laser constituted by superimposing a plurality of crystal layers respectively made of a group III nitride semiconductor (Al Ga ) In N (0&lE;x&lE;1, 0&lE;y&lE;1) on a cleavable or parting substrate in order comprises the crystal layer forming step of forming a plurality of crystal layers on a cleavable or parting substrate, the step of applying a light beam from the substrate side toward the interface between the substrate and the crystal layers and thereby forming the decomposed-matter area of the nitride semiconductor, and the step of cleaving or parting the substrate along a straight line intersecting with the decomposed-matter area and thereby forming a cleavage plane.

A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication method comprises forming steps of at least forming an undoped gallium-nitride underlying layer on a low-temperature buffer layer while keeping the pressure in a reactor at a value close to atmospheric pressure.

Growing community of inventors

Tsurugashima, Japan

Hiroyuki Ota