Mitsubishi Rayon Company, Limited

Mitsubishi Electric Corporation

Mitsubishi Chemical Cleansui Corporation

Nec Corporation

Other

Mitsubishi Chemical Corporation

Osaka Gas Company Limited

Hiroyuki Okazaki

Yoshie Tanizaki

Masanori Itakura

Kenji Honjyo

Satoshi Miyashita

Ikuo Kinoshita

Tetsuya Torichigai

Kenji Watari

Yoshihito Nakahara

Masumi Kobayashi

Manabu Yanou

Katsuyuki Yanone

Osami Kato

Kenji Honjou

Nobuyuki Kikuya

Takamitsu Takashima

Noriko Inoue

Eiji Yagyu

Yoshitaka Kamo

Hiroyuki Kawakami

Hidetoshi Koyama

Takuma Nanjo

Masatoshi Kamata

Masanori Ito

Kenichiro Kurahashi

Muneyoshi Suita

Akifumi Imai

Yoshihiro Kakumoto

Tetsuhiko Nakahara

Hiroyuki Tanaka

Kentarou Oda

Shinichi Miyakuni

Yosuke Suzuki

Yoichi Nogami

Toshiaki Kitano

Makiko Yoshida

Manabu Sasakawa

Arata Sakamoto

Takashi Egawa

Yoshiaki Yoshida

Kaoru Terazawa

Osami Katou

Hideo Kumamoto

Mitsuo Kiura

Junichi Fujita

Miroslaw M Slominski

Hiroyuki Fujiki

Yoshiichi Nakagawa

Fumihiro Kira

A semiconductor substrate () includes a front surface and a back surface opposite to each other, and a through-hole () penetrating from the back surface to the front surface. A metal film () surrounding the through-hole () is formed in a ring shape on the front surface. A front-surface electrode () includes a wiring electrode () covering the through-hole () and the metal film () and is joined to the front surface outside the metal film (). A back-surface electrode () is formed on the back surface and inside the through-hole () and connected to the wiring electrode (). The metal film () has a lower ionization tendency and a higher work function than the wiring electrode ().

Semiconductor device and method for manufacturing the same

Degassing/aeration membrane module

An external circulation-type hollow fiber membrane module which has a high processing capacity and which is capable of inhibiting a to-be-treated liquid within a case from flowing through a short path and efficiently bringing the liquid into contact with a hollow fiber membrane in whichever direction of a vertical direction, a horizontal direction, etc., the liquid flows. An external circulation-type hollow fiber membrane module is provided with: a hollow fiber membrane bundle; a case; and a short-path prevention body that blocks flowing of a to-be-treated liquid in a gap between the hollow fiber membrane bundle and the case, wherein a first end of the hollow fiber membrane bundle is fixed in the case, and the short-path prevention body is provided to the downstream side of a first port which is a liquid flow-in port in the case so as to project from the inner surface of the case.

External circulation-type hollow fiber membrane module

A transistor chip () has an active region (). A first seal material () covers a central portion of the active region () and does not cover a peripheral portion of the active region (). A second seal material () covers the peripheral portion of the active region (). Thermal conductivity of the first seal material () is higher than thermal conductivity of the second seal material (). Permittivity of the second seal material () is lower than permittivity of the first seal material ().

Semiconductor device

The present invention pertains to a hollow fiber membrane module () for removing gas from an objective liquid or supplying gas to the objective liquid, comprising: a hollow fiber membrane bundle (); and a collecting member () configured to collect first ends () of the hollow fiber membrane bundle () while maintaining openings of opened end portions () of hollow fiber membranes () of the hollow fiber membrane bundle (), wherein the collecting member () has a coupling portion configured to couple the collecting member () to an installation object in a detachable and liquid-tight manner.

Hollow fiber membrane module, degassing and gas supplying device, inkjet printer, and device for manufacturing carbonated spring

Disclosed herein is a hollow fiber membrane module provided with a hollow fiber membrane bundle, a case in which the hollow fiber membrane bundle is contained, a fixation part which affixes the hollow fiber membrane bundle within the case and divides the space inside the case into a first space that is outside the hollow fiber membranes and a second space that is in communication with the insides of the hollow fiber membranes, and a partition plate which divides the first space into a first region and a second region.

Hollow fiber membrane module

Provided is a filtration device exhibiting a high water treatment capacity and capable of increasing the longevity of a hollow-fiber filter, in a water purification device not requiring a purification material and requiring a high water treatment capacity. The filtration device () has: a housing case () having a water inlet unit and a water outlet unit arranged on one end side thereof; and a membrane module () provided inside this housing case (). A first flow path () for causing raw water that has flowed in from the water inlet unit () to flow further to the other end side of the housing case () than the membrane module (), and a second flow path () for causing the raw water that has flowed further to the other end side of the housing case () along this first flow path () to pass through the membrane module () and flow to the water outlet unit () are provided inside the housing case (). A spacer () is provided on the upstream side of the membrane module () in the second flow path ().

Filtration device

A semiconductor device includes: a substrate; a nitride semiconductor layer on the substrate; a source electrode, a drain electrode and a gate electrode on the nitride semiconductor layer; and a SiN surface protective film covering the nitride semiconductor layer, wherein a composition ratio Si/N of Si and N that form a Si&#x2014;N bond of the SiN surface protective film is 0.751 to 0.801.

Semiconductor device and method of manufacturing the same

The present invention relates to a external-perfusion hollow-fiber membrane module containing a hollow-fiber membrane bundle including a plurality of hollow-fiber membranes; and a casing that houses the hollow-fiber membrane bundle, wherein the hollow-fiber membrane bundle has one end that is fixed to an inside of the casing by a potting portion in an open state, and the external-perfusion hollow-fiber membrane module is configured to perform degassing on a gas contained in a liquid inside the casing, the gas being introduced into an inside from an outer surface of the hollow-fiber membrane.

External-perfusion hollow-fiber membrade module and inkjet printer having said module

A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed.

A hollow fiber membrane module in which a housing body forming the hollow fiber membrane module includes an insertion opening into which end parts of the plurality of hollow fiber membranes are inserted so as to be fixed and held, and an opening portion which exposes open end surfaces of a plurality of hollow fiber membranes inserted from the insertion opening to outside, and a cover that blocks the opening portion of the housing body. According to the present invention, it is possible to provide a housing enabling open end surfaces of hollow fiber membranes to be sealed by easily exposing the open end surfaces of the hollow fiber membranes when the hollow fiber membranes are damaged.

A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlGaN (0&#x2266;x&#x2266;1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlGaN (0&#x2266;y&#x2266;1, x&#x2260;y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlGaN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.

Semiconductor device with improved conductivity

Growing community of inventors

Tokyo, Japan

Hiroyuki Okazaki