Tosoh Corporation

Sagami Chemical Research Institute

Hiroyuki Oike

Yuki Yamamoto

Teppei Hayakawa

Taishi Furukawa

Ken-ichi Tada

Kohei Iwanaga

Hirokazu Chiba

Kazuhisa Kawano

Toshiki Yamamoto

Atsushi Maniwa

Naoyuki Koiso

Kenichi Tada

Shuya Ikemura

Ken-Ichi Tada

A titanium complex useful for producing a titanium-containing thin film under low temperature deposition conditions without using an oxidative gas is provided. A titanium complex represented by the general formula (1) (wherein each of Rand Ris independently a Calkyl group which may be bonded with each other to form a ring, X is CRor a N atom, Y is CRor a N atom, Z is CRor a N atom, each of R, Rand Ris independently a hydrogen atom or a Calkyl group, and n is an integer of from 1 to 3).

Titanium complex, method for producing same, and method for producing titanium-containing thin film

To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): wherein Land Lrepresent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein Rand Rrepresent a Calkyl group or a tri(Calkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein Rrepresents a tri(Calkyl)silyl group, Rand Rrepresent a Calkyl group, and X represents a Calkylene group; wherein Rand Rrepresent a Calkyl group, Rrepresents a hydrogen atom or a Calkyl group, Y represents an oxygen atom or NR, Z represents an oxygen atom or NR, and Rand Rindependently represent a Calkyl group.

Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein Rrepresents a silyloxy group represented by general formula (2) (wherein R, Rand Rindependently represent an alkyl group having 1 to 6 carbon atoms); Rrepresents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R, Rand Rindependently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

Substituted cyclopentadienyl cobalt complex and method for production thereof, and cobalt-containing thin film and method for production thereof

The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein Rto R, R, Rand Rto Rrepresents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

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Kanagawa, Japan

Hiroyuki Oike