Seiko Epson Corporation

Hiroyuki Oikawa

Satoshi Ito

Shinsuke Fujikawa

Toru Nimura

Masashi Nakagawa

Masahito Yoshii

Masakazu Nishida

Ken Shimada

Kiyoshi Hara

Shinta Misawa

An electro-optical device includes a display area configured to display an image and a peripheral area provided outside the display area in plan view. The electro-optical device includes a first substrate, a second substrate facing the first substrate, and an electro-optical layer disposed between the first substrate and the second substrate and having an optical characteristic changing in accordance with an electric field. One or both of the first substrate and the second substrate include a light blocking layer provided in the peripheral area and a reflection layer provided in the peripheral area. A reflectance of the reflection layer with respect to visible light is higher than a reflectance of the light blocking layer with respect to visible light. The light blocking layer is disposed closer to the display area than the reflection layer is to the display area.

Electro-optical device and electronic apparatus

An electro-optical device includes a substrate, a transistor including a semiconductor layer including a drain region, a source region, and a channel region and extending in a first direction, and a gate electrode, a scanning line, and a first light-blocking part, wherein the substrate, the semiconductor layer, the gate electrode, and a layer at which the scanning line is provided are arranged in a second direction, the first light-blocking part includes a first portion, a second portion, and a third portion, and a length of the first portion in the second direction, a length of the second portion in the second direction, and a length of the third portion in the second direction are longer in this order.

Electro-optical device and electronic device

A liquid crystal apparatus includes a liquid crystal layer, a pixel electrode provided in a display region and configured to be supplied with an image signal at a first frequency, and a first electrode provided in a region outside the display region and configured to be alternately supplied with a positive polarity potential with a potential higher than a predetermined potential and a negative polarity potential with a potential lower than the predetermined potential at a second frequency lower than the first frequency such that a positive polarity period in which the positive polarity potential is supplied and a negative polarity period in which the negative polarity potential is supplied have a same length.

Liquid crystal apparatus and projection-type display apparatus

In a liquid crystal device, an electrode is provided between a pixel area of a first substrate and a seal material, and an AC signal is applied to the electrode where a potential with respect to a common potential applied to a common electrode as a reference potential is alternately switched between a positive polarity and a negative polarity. For the AC signal, a length of a positive polarity period where a polarity becomes positive with respect to the common potential and a length of a negative polarity period where a polarity becomes negative with respect to the common potential are different. When anionic impurities of a liquid crystal layer are focused, a positive polarity period length is greater than a negative polarity period length. When cationic impurities of the liquid crystal layer are focused, a negative polarity period length is greater than a positive polarity period length.

Liquid crystal device and electronic apparatus having electrode between pixel area and seal material

In an electro-optical device, a first opening and a second opening are provided in an interlayer insulating layer provided in a layer between a transistor and a scanning line, with a semiconductor layer interposed between the first opening and the second opening in plan view. A portion of a gate electrode is provided inside the first opening, and the gate electrode is electrically connected to the scanning line via the first opening. The second opening does not overlap with the gate electrode, and a portion of a first capacitance electrode of a capacitance element is provided in the second opening, the first capacitance electrode having light shielding properties. Therefore, the width of the scanning line can be made narrower than in a case in which the gate electrode and the scanning line are electrically connected to each other via both the first opening and the second opening.

Electro-optical device having openings with inner walls and electronic apparatus

In an electro-optical device, a transistor includes a semiconductor layer extending in a second direction so as to overlap with a scanning line in plan view. A second contact hole for electrically connecting the scanning line with a gate electrode of the transistor is provided in a second interlayer insulating layer provided in a layer between the scanning line and the transistor. The second contact hole includes a first hole portion extending along the second direction on both sides of the semiconductor layer in plan view, and a second hole portion protruding from the first hole portion toward the semiconductor layer and extending along a first direction.

Electro-optical device with interlayer insulating layers and contact holes, and electronic apparatus

In a liquid crystal device, a first pixel area is provided in a pixel area of a first substrate, and a second pixel area is provided between the first pixel area and a seal material. The first pixel area has a first pixel electrode to which an image signal is applied, the image signal having a potential alternately switching between a positive polarity and a negative polarity with reference to a first central potential. The second pixel area includes a second pixel electrode to which a first driving potential is applied, the first driving potential having a potential alternately switching between a positive polarity and a negative polarity with reference to a second central potential, the first central potential and the second central potential having a potential difference set therebetween. Therefore, ionic impurities can be efficiently swept from the first pixel area to the second pixel area.

Liquid crystal device and electronic apparatus

In an electro-optical device, in an interlayer insulating layer provided in a layer between a transistor and a scanning line, a first opening and a second opening are respectively provided on both sides of a semiconductor layer in plan view, and a portion of a gate electrode is provided inside each of the first opening and the second opening. Therefore, the gate electrode configures a light shielding wall inside each of the first opening and the second opening. Of the first opening and the second opening, the first opening is provided at a position overlapping with the scanning line in plan view, and the gate electrode is electrically connected to the scanning line via the first opening. The second opening is provided at a position that does not overlap with the scanning line in plan view. Thus, the width of the scanning line can be made narrower.

A liquid crystal apparatus as an electro-optical device includes a TFT including a semiconductor layer and a gate electrode, a scan line electrically connected to the gate electrode and provided in a layer different from a layer where the gate electrode is provided, a capacitance line, and a conductive light shielding film electrically connected to the capacitance line. The light shielding film is provided in a layer between the gate electrode and the scan line, and in a plan view, overlaps with at least a part of a low-concentration drain region of the semiconductor layer.

In an element substrate of an electro-optical device, a semiconductor layer of a transistor has an L shape bending to overlap with both a scanning line and a data line. A first light shielding layer overlaps with a lower layer side of the semiconductor layer. A first light shielding wall and a second light shielding wall are provided on both sides of a semiconductor layer portion between a channel region and a second source/drain region (drain region) of the semiconductor layer. The first light shielding wall and the second light shielding wall to which a constant potential is applied prevent the semiconductor layer portion from being electrically affected even when the first light shielding wall and the second light shielding wall come close to the semiconductor layer portion.

An electronic device includes an electro-optical device including a substrate, a mirror for optical modulation disposed above one surface side of the substrate, and electrodes including an elevated address electrode disposed between the mirror and the substrate. The light source emits light toward the mirror in a direction at an angle with respect to the direction perpendicular to the mirror. The mirror includes a first incident end face which is an end face of the mirror located at a side from which the light is radiated, and a first antireflection film is provided on the first incident end face. The elevated address electrode includes a second incident end face which is an end face of the elevated address electrode located at the side from which the light is radiated, and a second antireflection film is provided on the second incident end face.

Electronic device and electro-optical device having a mirror with antireflection film

An electro-optical device includes a mirror being positioned above a surface of a substrate and modulating light, a torsion hinge being positioned between the mirror and the substrate, and supporting the mirror via a mirror support post such that the mirror is pivotable about an axis, and address electrodes being positioned between the mirror and the substrate, and supplying electrostatic forces between the address electrodes and the mirror. Each of the address electrodes includes a first address electrode that is positioned on a side of the axis in plan view, and a second address electrode that is positioned on the opposite side of the axis with respect to the first address electrode in plan view. The first address electrode and the second address electrode are driven independently of each other.

When it comes to configuring the lens array substrate on which a multistage lens array is formed, a first concavity which is formed of the concave surface is formed on a first surface which is formed of a substrate surface of one of several translucent substrates. In addition, on the substrate surface of one of the translucent substrates, a first lens layer, a first translucent layer, a second lens layer, a second translucent layer, a translucent protective layer, and a common electrode are stacked in order. The first translucent layer has the same refractive index as that of the first lens layer and the second lens layer. In addition, a refractive index of the protective layer is within a range between the refractive index of the second translucent layer and the refractive index of the common electrode.

Lens array substrate, electro-optical apparatus and electronic equipment

Provided is an electro-optical apparatus that includes a first insulation layer, a retention capacitance region including a plurality of retention capacitances disposed on the first insulation layer, a second insulation layer formed so as to cover the first insulation layer and the plurality of retention capacitances, and a plurality of pixel electrodes arranged on the second insulation layer so as to respectively overlap a corresponding one of the plurality of retention capacitances in a plan view. The first insulation layer includes a recessed portion formed in a region including the retention capacitance region, and the retention capacitances are provided on a bottom face of the recessed portion.

Electro-optical apparatus, and electronic apparatus

An electrooptic device substrate includes a scan line that is provided on an element substrate, a foundation insulating layer, a semiconductor layer provided on the foundation insulating layer, a gate insulating layer, recesses that are provided at both sides of the semiconductor layer so as to penetrate through the foundation insulating layer and the gate insulating layer, a gate electrode that is provided on the gate insulating layer and is electrically connected to the scan line in the recesses, an insulating interlayer that covers the gate insulating layer, the gate electrode, and the recesses, and a data line that is provided on the insulating interlayer so as to overlap with the scan line, the semiconductor layer, the gate electrode, and the recesses. The recesses include first recesses that overlap with the scan line and second recesses that extend to outer sides of the scan line.

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Chitose, Japan

Hiroyuki Oikawa