Shin-etsu Chemical Co., Ltd.

Kabushiki Kaisha Topcon

Shin-etsu Handotai Co., Ltd.

Naoetsu Electronics Co., Ltd.

Hiroyuki Ohtsuka

Takenori Watabe

Hiroshi Hashigami

Satoyuki Ojima

Ryo Mitta

Masatoshi Takahashi

Naoki Ishikawa

Toyohiro Ueguri

Shun Moriyama

Takao Abe

Shigenori Saisu

Masaru Sato

Takeyuki Kato

Hiroshi Iijima

Yutaka Yoneda

Kouji Nishio

Hideki Matsumura

Atsushi Masuda

Akira Izumi

Takeshi Akatsuka

Kenjirou Katsuragi

Toshihiro Okashita

Yoko Matsuo

Haruhiko Kano

Masanobu Yano

Tsutomu Onishi

A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming a base layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the base layer; removing the diffusion mask in a pattern; forming an emitter layer on the portion of the first main surface where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.

Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency

A backside contact solar cell has, on a first main surface of a crystal silicon substrate, a p-type region having a p-conductive type and an n-type region having an n-conductive type, and a positive electrode formed on the p-type region and a negative electrode formed on the n-type region, wherein the positive electrode includes a laminated conductor of a first electric conductor which is formed on the p-type region and which includes a group III element and a second electric conductor which is laminated on the first electric conductor and which has a lower content ratio of the group III element than the first electric conductor, and the negative electrode includes the second electric conductor formed on the n-type region. In this way, a low-cost backside contact solar cell has a high photoelectric conversion efficiency.

High-efficiency backside contact solar cell and method for manufacturing thereof

A solar cell including: a semiconductor substrate having a first conductivity type; a first conductivity type layer having a conductivity type equal to the first conductivity type and a second conductivity type layer having a second conductivity type opposite to the first conductivity type, which are located on a first main surface of the substrate; a first collecting electrode on the first conductivity type layer located on the first main surface; and a second collecting electrode on the second conductivity type layer located on the first main surface. In the solar cell, a second conductivity type layer having the second conductivity type is formed on a side surface of the semiconductor substrate and continuously from the second conductivity type layer located on the first main surface. Consequently, it is possible to provide a solar cell having excellent conversion efficiency and being capable of efficiently collecting carriers.

Solar cell and method for manufacturing the same

A drying method of a polyimide paste which can maintain a printing shape while maintaining productivity includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.

Drying method of polyimide paste and manufacturing method of solar cell having high photoelectric conversion efficiency

An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

Solar cell, solar cell manufacturing system, and solar cell manufacturing method

A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5&#xd7;10atoms/cmare disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.

A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a CHOdetection count number of 100 or less when the insulator film is irradiated with Biions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

High efficiency solar cell and method for manufacturing high efficiency solar cell

The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100&#xb0; C.; and performing an annealing treatment to the semiconductor silicon substrate at 100&#xb0; C. or more and 450&#xb0; C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.

Methods for manufacturing high photoelectric conversion efficiency solar cell

An object of the present invention is to provide, at a low cost, a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

To Provide a back contact type solar cell with high photovoltaic-conversion efficiency which can be easily manufactured with good yield at low cost. The high photovoltaic-conversion efficiency solar cell of the present invention includes on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate: a first conductive type diffusion layer where first conductive type impurities are diffused; a second conductive type diffusion layer where second conductive type impurities are diffused; and a high resistive layer or an intrinsic semiconductor layer formed between the first conductive type diffusion layer and the second conductive type diffusion layer.

High photovoltaic-conversion efficiency solar cell, method for manufacturing the same, solar cell module, and photovoltaic power generation system

Provided is a solar cell including, on a first main surface of a semiconductor substrate having a first conductivity type, a base layer which has the first conductivity type, and an emitter layer which is adjacent to the base layer and has a second conductivity type which is a conductivity type opposite to the first conductivity type, and further including a base collecting electrode provided on at least the base layer, and a part of the base collecting electrode is also arranged on the emitter layer adjacent to the base layer on which the base collecting electrode is arranged. Consequently, the inexpensive solar cell having high photoelectric conversion efficiency can be provided.

High photoelectric conversion efficiency solar cell and method for manufacturing high photoelectric conversion efficiency solar cell

A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 &#x3bc;m or more and (W+110) &#x3bc;m or less.

A method for manufacturing a solar cell capable of enhancing photoelectric conversion efficiency is provided. The present invention is a method for manufacturing a solar cell which includes steps of forming a p-n junction on a silicon semiconductor substrate and forming an aluminum oxide film on at least one main surface of the silicon semiconductor substrate, including: a step of subjecting the silicon semiconductor substrate to heat treatment in an atmosphere with 20 g or more water vapor per cubic meter and a temperature of 60&#xb0; C. or more and 100&#xb0; C. or less before the step of forming the aluminum oxide film. Consequently, a method for manufacturing a solar cell capable of enhancing photoelectric conversion efficiency is provided.

Method for manufacturing high efficiency solar cell

A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a CHOdetection count number of 100 or less when the insulator film is irradiated with Biions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. There can be provided a solar cell having excellent weather resistance and high photoelectric conversion characteristics.

In a back contact type solar cell in which an impurity diffusion layer where second conductive type impurities are diffused is formed on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate, and an electrode in contact with the impurity diffusion layer is provided, a surface concentration of the impurities in the impurity diffusion layer is not less than 5&#xd7;10atms/cmand not more than 5&#xd7;10atms/cm, and a diffusion depth of the impurities in the impurity diffusion layer is not smaller than 1 &#x3bc;m and not larger than 2.9 &#x3bc;m from a top of the back surface. It is thereby possible to provide a high efficiency back contact type solar cell which can be manufactured by a simple method at low cost.

Growing community of inventors

Karuizawa-machi, Japan

Hiroyuki Ohtsuka