Kioxia Corporation

Hiroyuki Ohtori

Takashi Fukushima

Ryosuke Sawabe

Kenichi Fujii

Kaihei Katou

Yuji Sakai

Saho Ohsawa

Masaki Kato

A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).

Semiconductor memory device and method for manufacturing semiconductor memory device

Growing community of inventors

Yokkaichi, Japan

Hiroyuki Ohtori