Hitachi, Ltd.

Renesas Technology Corp.

Elpida Memory, Inc.

Tokyo Institute of Technology

Trecenti Technologies, Inc.

Renesas Electronics Corporation

Hitachi Construction Machinery Co., Ltd.

Hiroyuki Ohta

Hideo Miura

Tomio Iwasaki

Takashi Nakajima

Yukihiro Kumagai

Hiromi Shimazu

Takashi Sumigawa

Noriaki Okamoto

Yohei Tanno

Shuji Ikeda

Shinji Nishihara

Masashi Sahara

Isamu Asano

Norio Ishitsuka

Shinpei Iijima

Yuzuru Ohji

Asao Nishimura

Shinji Tanaka

Masatoshi Kanamaru

Hiroo Masuda

Hiroshi Moriya

Hideyuki Aoki

Naoto Ban

Akihiko Ariga

Shingo Nasu

Atsushi Hosogane

Norio Suzuki

Takashi Hashimoto

Mitsuo Usami

Yoshitaka Nakamura

Masayuki Suzuki

Naotaka Tanaka

Koji Sasaki

Yoshishige Endo

Masahiko Hiratani

Takahide Ikeda

Yuichi Matsui

Yoichi Tamaki

Masatsugu Kametani

Takeshi Kimura

Toshifumi Takeda

Kazushige Sato

Hisashi Tanie

Kisho Ashida

Kentaro Yamada

Michihiro Mishima

Ryuji Kono

Munetoshi Zen

Masato Kunitomo

Mie Shimojima

Katsuyuki Nakanishi

Naoto Saito

Hiroaki Ikeda

Hideki Tanaka

Jun Tanaka

Osamu Ikeda

Yuji Watanabe

Ichiro Anjoh

Akio Hasebe

Akihiro Yaguchi

Mitsuaki Katagiri

Masahiro Moniwa

Kenichi Yamamoto

Nobuo Owada

Ichiro Anjo

Takayuki Oshima

Sueo Kawai

Fumio Ootsuka

Kenji Araki

Shigeki Hirasawa

Kensuke Okonogi

Osamu Inoue

Takahiro Onai

Kunio Matsumoto

Hideo Arima

Kensuke Ishikawa

Katsuhiko Ichinose

Masahiko Fujisawa

Kiyonori Ohyu

Akihiko Ohsaki

Yoshihisa Kiyotoki

Masato Nakamura

Nae Hisano

Masahito Takahashi

Shinji Hiramitsu

Ryozo Yoshino

Kazuo Ogawa

Mari Uchida

Satoshi Matsuyoshi

Keiichi Watanabe

Takayuki Shimodaira

Hiroyuki Mima

Ryuji Takada

Kenji Onodera

Yuka Madoka

Yasuo Sonobe

Kousuke Ishibashi

Yasushi Tainaka

Masafumi Miyamoto

Toshihiro Imamura

1) A fused gene including a nucleic acid sequence which affects the biosynthesis or accumulation of neutral lipid and a phosphorus deficiency-responsive expression control sequence which is operably linked to the nucleic acid sequence and controls the expression of the nucleic acid sequence, 2) a transgenic plant which contains the fused gene, 3) a method for manufacturing vegetable fat or oil, including a cultivation step of cultivating the transgenic plant, and 4) a method for manufacturing vegetable fat or oil in which the cultivation step is a step of cultivating the transgenic plant in a phosphorus-deficient state are provided.

Fused gene, vector, transgenic plant, method for manufacturing vegetable fat or oil, method for constructing transgenic plant, and kit for constructing transgenic plant

The purpose of the present invention is to effectively accumulate triacylglycerol in algae cells, the present invention providing a method for introducing a triacylglycerol synthetase gene, a phosphorus starvation-inducible promoter, and a 3' untranslated region into algae.

Method for preparing triacylglycerol high-productivity algae

Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100&#xb0; C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed.

Strain sensor chip mounting structure, strain sensor chip and method of manufacturing a strain sensor chip mounting structure

A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region.

Mechanical quantity measuring device

A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a &#x3c;100&#x3e; direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a &#x3c;110&#x3e; direction.

Mechanical-quantity measuring device

A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Strain measuring device

A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

Semiconductor device

A single crystal semiconductor including a Wheatstone bridge circuit formed of an impurity diffusion layer whose longitudinal direction is aligned with a particular crystal orientation is connected to a rotating body. A rotating body dynamic quantity measuring device and a system using the measuring device are fatigue- and corrosion-resistant because of the single crystal semiconductor used and are not easily affected by temperature variations because of the bridge circuit considering a single crystal anisotropy.

Rotating body dynamic quantity measuring device and system

An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

Apparatus for measuring a mechanical quantity

A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a &#x3c;100&#x3e; direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a &#x3c;110&#x3e; direction.

In a semiconductor device having a Low-k film as an interlayer insulator, peeling of the interlayer insulator in a thermal cycle test is prevented, thereby providing a highly reliable semiconductor device. In a semiconductor device having a structure in which interlayer insulators in which buried wires each having a main electric conductive layer made of copper are formed and cap insulators of the buried wires are stacked, the cap insulator having a relatively high Young's modulus and contacting by its upper surface with the interlayer insulator made of a Low-k film having a relatively low Young's modulus is formed so as not to be provided in an edge portion of the semiconductor device.

A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

Solidification sensor

The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

Load sensor with shock relaxation material to protect semiconductor strain sensor

Growing community of inventors

Tsuchiura, Japan

Hiroyuki Ohta