Micron Technology Incorporated

Idaho Research Foundation, Inc.

Hiroyuki Ohde

Chien M Wai

Steve Kramer

Stephen J Kramer

Methods of increasing the solubility of a base in supercritical carbon dioxide include forming a complex of a Lewis acid and the base, and dissolving the complex in supercritical carbon dioxide. The Lewis acid is soluble in supercritical carbon dioxide, and the base is substantially insoluble in supercritical carbon dioxide. Methods for increasing the solubility of water in supercritical carbon dioxide include dissolving an acid or a base in supercritical carbon dioxide to form a solution and dissolving water in the solution. The acid or the base is formulated to interact with water to solubilize the water in the supercritical carbon dioxide. Some compositions include supercritical carbon dioxide, a hydrolysable metallic compound, and at least one of an acid and a base. Some compositions include an alkoxide and at least one of an acid and a base.

Methods of increasing the solubility of materials in supercritical carbon dioxide

Compositions comprising supercritical carbon dioxide and metallic compounds

Metal and/or silicon oxides are produced by hydrolysis of alkoxide precursors in the presence of either an acid catalyst or a base catalyst in a supercritical fluid solution. The solubility of the acid catalysts in the supercritical fluid can be increased by complexing the catalyst with a Lewis base that is soluble in the supercritical fluid. The solubility of the base catalysts in the supercritical fluid can be increased by complexing the catalyst with a Lewis acid that is soluble in the supercritical fluid. The solubility of water in the solution is increased by the interaction with the acid or base catalyst.

Formation of insulator oxide films with acid or base catalyzed hydrolysis of alkoxides in supercritical carbon dioxide

A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.

Method of selectively depositing materials on a substrate using a supercritical fluid

The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H, at least one H-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.

Semiconductor constructions comprising a layer of metal over a substrate

Semiconductor constructions

Methods of forming metal-containing films over surfaces of semiconductor substrates

The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H , at least one H -activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.

Growing community of inventors

Moscow, ID, United States of America

Hiroyuki Ohde