Sony Corporation

Mitsubishi Hitachi Power Systems, Ltd.

Nsk Corporation

Nitto Kogyo Co., Ltd.

Hiroyuki Nakano

Yoshikazu Murakami

Yasuyuki Mizunuma

Shinichiro Noudo

Takahiro Ohgihara

Kumiko Oguni

Hiroki Hane

Daisuke Igarashi

Nobuhisa Seya

Kazuhiro Igarashi

Katsuto Numayama

Kanako Niikura

Youhei Maekawa

Yasushi Morita

Tohru Ogawa

Tsutomu Okamoto

A laser projection method including the steps of: irradiating, from a laser projection unit, a workpiece that is a measurement object, with a laser while controlling a plurality of mirror angles; imaging the workpiece with a stereo camera, extracting a contour of the workpiece, and calculating a three-dimensional coordinate; calculating a positional relationship between the laser projection unit and the workpiece by comparing the calculated three-dimensional coordinate of the workpiece contour with the minor angle; and performing coordinate transformation of CAD data information and drawing CAD data from the laser projection unit to the workpiece, based on the positional relationship between the laser projection unit and the workpiece. The machining method including the steps of: selecting a component of a tool; assembling the component; imaging the tool assembled; and determining whether or not a desired tool has been assembled.

Method and apparatus for laser projection, and machining method

To provide an exposure method and an exposure apparatus, using a complementary divided mask, designed to enable alignment of a complementary divided mask at a high precision over the entire region of a semiconductor wafer. Further, to provide a semiconductor device fabricated by the exposure method and a method of producing a semiconductor device using the exposure method. In a first region at a middle portion of a semiconductor wafer, the complementary divided mask is aligned by die-by-die alignment method based on detection results of positions of alignment marks provided at the respective chips and the regions are exposed, while in a second region, outside of the first region, where alignment on the complementary divided mask by die-by-die alignment method cannot be used, coordinates of the respective chip in the second region are decided by global alignment method based on detection results of positions of alignment marks detected in the first step and the complementary divided mask is aligned and the regions are exposed.

Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same

The machine element selection support system comprises a database apparatus and a selection support server, while the selection support server is connected to a network. A customer, who wishes to select a machine element, gains access to the selection support server using a customer terminal. The selection support server receives, from the customer terminal, information relevant to the specifications and operating conditions of machine elements to be selected, the purchase conditions of the machine elements, and machine element selection information including information relevant to the output mode of information relevant to selection candidates, extracts selection candidates in accordance with not only the specifications and operating conditions information but also information stored in the specification databases and, in accordance with an output mode received, outputs to the customer terminal information relevant to the selection candidates that can satisfy purchase conditions of the extracted selection candidates.

Machine element selection support system

The present invention provides a fixing roller capable of satisfying releasing ability and scratch resistance all together. The fixing roller comprises a corea primer layerapplied on the periphery of the coreand a fluororesin top layerapplied on the periphery of the primer layerwherein glass particlesare mixed into at least one of the primer layerand the top layer

Fixing roller

A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.

Process for the formation of a metal pattern

In a thin film ferromagnetic resonance tuned filter is disclosed which comprises a ferrimagnetic thin films, input and output signal transmission lines respectively coupled with the ferrimagnetic thin films, and a magnetic circuit for applying a DC magnetic field to the ferrimagnetic thin films, the present invention expands the variable frequency band by forming extensions each extending from the signal transmission line so that the distance from the coupling point of the signal transmission line coupled with the corresponding ferrimagnetic thin film to the grounded end thereof is 1/10 or above and less than 1/4 the wavelength of a wave transmitted in the transmission lines at the upper limit frequency of a tuning frequency band. Further the deterioration of the isolation characteristics is suppressed by bending the extended portions not to form parallel portions to another transmission line.

Thin film ferromagnetic resonance tuned filter

A tuned oscillator utilizing a thin film ferromagnetic resonator is disclosed. The oscillator comprises an active element for oscillator and a YIG thin film resonator connected to the active element as a part of feed-back circuit for the active element. The YIG thin film resonator is applied with a bias magnetic field perpendicular to a surfce of a YIG disk which is generated by a permanent magnet for a fixed component and a coil for a variable component for the resonance frequency. The resonance frequency is stabilized by use of a PLL circuit connected to an output of the oscillator and feeding back to the coil. Since the YIG thin film tuned oscillator has a high Q value, high quality communication signal processing can be achieved. The YIG tuned oscillator is used as local oscillator for a transciever.

Tuned oscillator utilizing thin film ferromagnetic resonator

A tuned oscillator is disclosed which consists of an active element for oscillation, a ferrimagnetic resonant element connected to part of feedback of the active element, and a matching circuit connected to the active element. The matching cirucit is designed to reflect the fundamental wave produced by the ferrimagnetic resonant element and active and pass the second harmonic wave. Consequently, the magnetic circuit has its load reduced in applying a D.C. magnetic field necessary for frequency tuning to the ferrimagnetic resonance element.

Tuned oscillator

A ferromagnetic resonator is disclosed, in which perpendicular ferrimagnetic resonance of thin film YIG is utilized. The resonator comprises a ferrimagnetic YIG thin film and a microstrip line coupled to the YIG thin film operative in a bias magnetic field applied perpendicular to a major surface of the YIG thin film. The YIG thin film disk has a magnetization distribution of magnetostatic mode, and the microstrip line is designed to generate a high-frequency magnetic field distribution similar to the magnetization distribution of the uniform mode (1, 1).sub.1. In such arrangement, coupling between the high-frequency magnetic field and magnetization of high sprious mode is reduced.

Growing community of inventors

Kanagawa, Japan

Hiroyuki Nakano