Mitsubishi Electric Corporation

Renesas Electronics Corporation

Yoshino Kogyosho Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Nippon Telegraph and Telephone Corporation

Fuji Xerox Co., Ltd.

Sony Corporation

Nissan Motor Company Limited

Nikkiso Company Limited

Dai Nippon Printing Co., Ltd.

University of Pittsburgh

Nec Corporation

Tohoku University

Tokyo Institute of Technology

Yokogawa Electric Corporation

Hiroyuki Nakamura

Yukihiro Sato

Nobuya Koike

Atsushi Nishikizawa

Shinya Otsuki

Tomoaki Ogawa

Makoto Umeuchi

Takayuki Goto

Hiroyuki Takahashi

Atsushi Ito

Junichi Iwatani

Masayoshi Nabeshima

Hiroshi Sakamoto

Shigeo Iizuka

Atsushi Fujiki

Tadatoshi Danno

Takao Kishi

Masaaki Ohgami

Masashi Yoneyama

Kazutoyo Takano

Shuhei Yokoyama

Shinya Soneda

Katsuhiko Funatsu

Haruo Tsuchida

Yuichi Yato

Tatsuhiro Seki

Kazuhiro Kawahara

Hiroya Shimoyama

Eiichiro Tanaka

Toshitaka Sekine

Akihiro Yamada

Dennis Patrick Curran

Katsuya Hyodo

Akira Muto

Yoshihiko Morimoto

Kisho Ashida

Shuichi Konami

Katsuhito Kuwahara

Hiroi Oka

Kotaro Fujiwara

Norio Kido

Makoto Shikata

Akira Arai

Yoji Arakawa

Shinichi Sato

Akira Okada

Takashi Ishigami

Makoto Koizumi

Hirofumi Nakano

Kazuo Suzuki

Eiji Watanabe

Shigeru Mori

Hayato Fukuzono

Toshio Ito

Yoshiyuki Kakuta

Keita Kuriyama

Naoki Kita

Masahiro Kando

Katsuhiro Yamashita

Kazuo Hara

Masaaki Ishibashi

Masafumi Yoshioka

Tadahiko Horiuchi

Toru Iwagami

Hitoshi Wakabayashi

Kota Ito

Masayuki Ueno

Maki Hasegawa

Naoki Fujita

Kazuto Goto

Kazunori Hasegawa

Teruaki Nagahara

Shogo Shibata

Koji Aoyama

Akira Uemura

Koichiro Okumura

Tsutomu Tatsuta

Toru Toma

Hideyuki Tsuboi

Shuhei Wakamatsu

Tohru Mogami

Takaharu Tasaki

Osamu Soma

Naoya Hayashi

Kenya Kawano

Kosuke Yamaguchi

Yoshinori Yamamoto

Nobuhiro Onda

Tomoyuki Mikuriya

Yutaka Imaizumi

Takeo Shimada

Shoichi Kuga

Tomohiro Okada

Kiminobu Tsutada

Jing Teng

Takashi Ohsaki

Tetsuo Uchida

Hiroshi Ikarashi

Susumu Mochida

Yoshiaki Kasai

A semiconductor apparatus includes: a semiconductor substrate; a diffusion layer; a first depletion prevention region; a channel stopper electrode, a monitor electrode and an insulating film. The inner edge portion of the monitor electrode is positioned between the diffusion layer and the first depletion prevention region. A distance between the outer edge portion of the channel stopper electrode and the inner edge portion of the monitor electrode is a first distance. A distance between the diffusion layer and the first depletion prevention region is a second distance. The first and second distances are set so that a discharge voltage between the channel stopper electrode and the monitor electrode becomes greater than an avalanche breakdown voltage at a PN junction portion of the diffusion layer and the semiconductor substrate.

Semiconductor apparatus

A benzoic acid salt of 4-[5-[(3S)-3-aminopyrrolidine-1-carbonyl]-2-[2-fluoro-4-(2-hydroxy-2-methyl-propyl)phenyl]phenyl]-2-fluoro-benzonitrile is provided. A sorbic acid salt of 4-[5-[(3S)-3-aminopyrrolidine-1-carbonyl]-2-[2-fluoro-4-(2-hydroxy-2-methyl-propyl)phenyl]phenyl]-2-fluoro-benzonitrile is also provided.

Salt of terphenyl compound

A high-performance and flexible loudspeaker apparatus usable in various scenes. A first unit includes a loudspeaker therein, a second unit is connected to a lower portion of the first unit, the first unit comprises the loudspeaker provided in a housing of the first unit so as to output a sound toward an upper portion of the housing and a passive radiator provided on a rear surface side of the loudspeaker in the housing, and an output port of the passive radiator is opposed to an inclined surface which is provided at an upper portion of the second unit and whose distance from the output port of the passive radiator increases toward a radially outer side of the housing.

High-performance and flexible loudspeaker apparatus usable in various scenes

The present disclosure relates to novel crystalline forms of sulfonamide compounds, pharmaceutical compositions containing the crystalline form compounds and methods of preparing and using the same.

Sulfonamide compounds and use thereof

A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes: a package to seal a semiconductor element; a lead frame having one end portion connected to the semiconductor element and the other end portion protruding from a side surface of the package; a plurality of threaded holes formed in the package to enable the package to be fixed to the substrate; and a resin part capable of closing each of the plurality of threaded holes. A type name of the semiconductor device is represented by open and closed states of the respective threaded holes.

Semiconductor device having at least one resin part that closes one or more corresponding ones of a plurality of threaded holes

A predetermined radio base station and subordinate radio terminals detect signals (beacons) regularly transmitted by other radio base stations, transmit information about radio channels and base station identifiers of the detected signals, and position information about the radio terminals to an interference area detection device to aggregate the information and the position information as a base station-base station detection list and a terminal-base station detection list. The interference area detection device compares the lists, determines, for each of positions of the subordinate radio terminals to the predetermined radio base station, whether both of the signal of the predetermined radio base station and a signal of another radio base station, which cannot be detected by the predetermined radio base station, are detected or not, and determines that a position where both of the signals are detected is within an interference area if the predetermined radio base station and the other radio base station detected at the position use the same radio channel.

Interference area detection method for wireless communication system, interference area detection system, interference area detection device, and interference area detection program

A plurality of access points configured to communicate with a subordinate wireless LAN terminal, an information collecting device configured to collect a frame respectively transmitted and received between the plurality of access points and the wireless LAN terminal, and extract information on communication quality of an access point of the plurality of access points from a header of the frame, and an information collecting server configured to acquire the information on the communication quality of the access point from the information collecting device, analyze the information to determine whether the communication quality is good or bad for each of the plurality of access points, and execute processing of externally displaying or notifying a result that is determined are included.

Wireless LAN communication system, access point communication quality determination method, and information collection server

There are provided a plurality of radio devices detecting an interference source signal transmitted by an interference source and generating pieces of air time information showing whether the interference source signal exists or not for each predetermined time unit; and an aggregation device estimating air time of the interference source by acquiring the pieces of air time information from the plurality of radio devices and aggregating/integrating the acquired pieces of air time information for each predetermined unit time, matching timings.

Wireless communication system, aggregation device, interference source air time acquisition method, and interference source air time acquisition program

A manufacturing method of a semiconductor device according to the technology disclosed in the present specification includes: providing at least one semiconductor element; connecting, to the semiconductor element, a plurality of first terminals and at least one second terminal that is a control terminal to which a voltage lower than that of the first terminal is applied; and forming a first bent part in the first terminal, in which the first bent part does not protrude on the surfaces, facing each other, of the plurality of first terminals that are adjacent to each other.

Manufacturing method of semiconductor device and semiconductor device

A wireless base station and a first wireless terminal include means for collecting first wireless performance information regarding wireless communication in both a downstream direction and an upstream direction and transmitting the first wireless performance information to a wireless performance measurement device. The wireless base station and a second wireless terminal include means for collecting second wireless performance information regarding wireless communication in both the downstream direction and the upstream direction and transmitting the second wireless performance information to the wireless performance measurement device. The wireless performance measurement device includes means for obtaining a first comparison result by comparing the first wireless performance information regarding the upstream direction and the downstream direction, obtaining a second comparison result by comparing the second wireless performance information regarding the upstream direction and the downstream direction, and determining the location where an abnormality occurred in accordance with a result of a comparison of the first comparison result and the second comparison result. The location is determined from among the wireless base station, the first wireless terminal, the second wireless terminal, and a wireless propagation environment between the wireless base station and the first wireless terminal and between the wireless base station and the second wireless terminal.

Radio performance measurement system, radio performance measurement method, radio performance measurement device, and radio performance measurement program

A projection unit () of an interference power estimation device () projects an orbit of a satellite onto a map representing a ground surface. A range acquisition unit () determines a plurality of ranges on the map so that the projected orbit is included in the ranges. An altitude calculation unit () calculates an altitude of the orbit of the satellite in each of the ranges. A range interference calculation unit () calculates, for each of the ranges, an interference power between the satellite at a position determined by a latitude and a longitude of the range and the altitude calculated for the range and a radio station installed on the ground surface. An estimation result calculation unit () selects, as an estimation result, a maximum value among the interference powers calculated for each of the ranges.

Interference power estimation method, interference power estimation apparatus and program

There are provided an information collecting device configured to collect a frame A transmitted and received between a wireless LAN base station that is an evaluation target and a wireless LAN terminal subordinate to the wireless LAN base station that is the evaluation target and a frame B transmitted and received between a wireless LAN base station that is a non-evaluation target and a wireless LAN terminal subordinate to the wireless LAN base station that is the non-evaluation target, and extract radio information on communication quality of each of the wireless LAN base stations from a header of a corresponding one of the frames A and B, and a wireless LAN communication quality estimation device configured to acquire, from the wireless LAN base station that is the evaluation target, information on the number of currently connected wireless LAN terminals, acquire, from the information collecting device, the radio information on the communication quality of each of the wireless LAN base stations, and analyze the information to estimate whether the communication quality of the wireless LAN base station that is the evaluation target is good or bad.

Wireless LAN communication quality estimation method, wireless LAN communication quality estimation system, information collection device, and wireless LAN communication quality estimation device

According to the present disclosure, a method of manufacturing a semiconductor device includes the steps of (a) preparing a lead frame including a switching element die pad, a control element die pad, and a third-side side rail portion, (b) mounting a switching element and a diode element on the switching element die pad and mounting a control element configured to control the switching element on the control element die pad, (c) sealing the switching element, the diode element, and the control element with a mold resin such that the power side terminal, the control side terminal, and a part of the third-side side rail portion protrude outward, and (d) forming a third-side side rail terminal by cutting the third-side side rail portion, the third-side side rail terminal extending from a part of the third-side side rail portion.

Method of manufacturing semiconductor device and semiconductor device

Growing community of inventors

Tokyo, Japan

Hiroyuki Nakamura