Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Skyworks Solutions, Inc.

Skyworks Filter Solutions Japan Co., Ltd.

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Maxell, Ltd.

Riso Kagaku Corporation

National Institute of Advanced Industrial Science and Technology

Skyworks Global Pte. Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Hitachi Maxell, Limited

Maxell Holdings, Ltd.

Hitachi Industry & Control Solutions, Ltd.

Hiroyuki Nakamura

Tetsuya Tsurunari

Joji Fujiwara

Rei Goto

Hidekazu Nakanishi

Kazunori Nishimura

Keiji Onishi

Toshio Ishizaki

Hiroshi Nakatsuka

Tomohiro Iwasaki

Toru Yamada

Tomoya Komatsu

Shigeru Tsuzuki

Takehiko Yamakawa

Yosuke Hamaoka

Keiichi Maki

Yasuhiko Kunii

Nobuyuki Kaku

Hiroyuki Kajikawa

Ken Matsunami

Yoshiaki Ando

Mitsunori Miyanari

Hiroshi Yamaguchi

Megumi Kurachi

Toru Yamaji

Masahiro Kishigami

Akio Tsunekawa

Takuya Shimizu

Shun-ichi Seki

Gong Bin Tang

Chohei Ono

Toru Jibu

Shoji Okamoto

Koji Hirata

Masahiko Yatsu

Takashi Inoue

Toshinori Sugiyama

Toshifumi Nakatani

Kwang Jae Shin

Hiroshi Chiba

Makoto Sakakura

Yukio Iwasaki

Masashi Ito

Hidehito Shimizu

Hiroshi Yasuda

Hiroaki Kosugi

Joshua James Caron

Kazuhide Uriu

Benjamin Paul Abbott

Masahiro Yasumi

Shunichi Seki

Siarhei Dmitrievich Barsukou

Tsutomu Igaki

Kenichi Yamashita

Tohru Nakamura

Koichi Ogawa

Ryoichi Takayama

Kenichi Takahashi

Takahiro Sato

Kazuo Shikita

Toshiki Itoi

Toru Sakuragawa

Takaaki Maegawa

Hiroki Kamiguchi

Tsutomu Matsumura

Jie Zou

Michio Kadota

Kaoru Ishida

Hisashi Adachi

Hideki Aikoh

Hiroshi Kagata

Satoshi Nakayama

Hironori Tomita

Morito Akiyama

Naoki Yuda

Satoshi Ohuchi

Shuji Tanaka

Toshiaki Nakamura

Kouji Kawakita

Toshimitsu Matsuyoshi

Hironori Fukuhara

Hideo Ohkoshi

Eiichi Kanaumi

Chun Sing Lam

Shigehiro Yoshiuchi

Masayuki Fukui

Katsuya Morinaka

Ryouichi Takayama

Kenji Sakamoto

Naohiro Tsurumi

Takami Ishida

Naohiro Ueno

Tomoya Maekawa

Takuya Wada

Tetsuo Kawasaki

Tomohiro Nagano

Myeong Gweon Gu

Takashi Imanaka

Kenichi Kimura

Masato Uehara

A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.

Piezoelectric MEMS device with thermal compensation from different material thicknesses

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

Acoustic wave devices on stacked die

A piezoelectric microelectromechanical system microphone comprises a support substrate, a membrane including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the membrane, and a compliant anchor including a trench defined in the support substrate about a portion of a perimeter of the membrane to increase sensitivity of the piezoelectric microelectromechanical system microphone.

Anchor silicon dioxide layer for piezoelectric microelectromechanical system microphone

A delay line for radio frequency circuits comprises a piezoelectric substrate, a transmission single phase unidirectional transducer (SPUDT) disposed on the piezoelectric substrate, and a receive SPUDT disposed on the piezoelectric substrate and separated from the transmission SPUDT in a direction of transmission of a main acoustic wave mode utilized by the transmission SPUDT.

Lamb wave delay line

An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

Acoustic wave devices with common ceramic substrate

Information related to a vehicle can be displayed by projecting an image based on the information on a road surface or the like. An image projection apparatus that projects an image includes: a sensor unit that acquires information related to a vehicle; and an image projection unit that projects the image based on the information acquired by the sensor unit.

Image projection apparatus, of a vehicle, that projects an image on a surface

Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter.

Multiplexer including filter with two types of acoustic wave resonators

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode.

Acoustic wave device with ceramic substrate

Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Surface acoustic wave device

Aspects of this disclosure relate to an elastic wave device. The elastic wave device includes a sub-wavelength thick piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity layer configured to inhibit an elastic wave from leaking from the piezoelectric layer at anti-resonance.

Elastic wave device with sub-wavelength thick piezoelectric layer and high velocity layer

Aspects of this disclosure relate to a surface acoustic wave device that includes a first reflector over a piezoelectric layer, a second reflector over the piezoelectric layer, and an interdigital transducer electrode structure over the piezoelectric layer and positioned between the first reflector and the second reflector. The surface acoustic wave device includes a velocity adjustment layer arranged to adjust acoustic velocity in a region of the surface acoustic wave device. The velocity adjustment layer can be a high speed layer or a low speed layer.

Acoustic wave device with velocity adjustment layer

Aspects of this disclosure relate to a surface acoustic wave filter with an acoustic velocity adjustment structure. The surface acoustic wave filter can include a first interdigital transducer electrode disposed on a piezoelectric layer, an acoustic reflector disposed on the piezoelectric layer, and a second interdigital transducer electrode disposed on the piezoelectric layer. The second interdigital transducer electrode is longitudinally coupled to the first interdigital transducer electrode and positioned between the first interdigital transducer electrode and the acoustic reflector. The acoustic velocity adjustment structure can be positioned over at least a gap between the first interdigital transducer electrode and the second interdigital transducer electrode. The acoustic velocity adjustment structure can be arranged to increase an acoustic wave propagation velocity in a first region that includes the gap relative to a second region over at least a portion of the first interdigital transducer electrode.

Acoustic wave filter with acoustic velocity adjustment structure

Aspects of this disclosure relate to an acoustic wave device that includes high velocity layers on opposing sides of a piezoelectric layer. A temperature compensation layer can be positioned between one of the high velocity layers and the piezoelectric layer. The acoustic wave device can be arranged to generate a boundary acoustic wave having a higher velocity than a respective acoustic velocity of each of the high velocity layers.

Boundary acoustic wave device

Aspects of this disclosure relate to a surface acoustic wave device with a vertical stack over a piezoelectric layer. The vertical stack can include a first acoustic reflector disposed on the piezoelectric layer, a second acoustic reflector disposed on the piezoelectric layer, and an interdigital transducer electrode disposed on the piezoelectric layer and positioned between the first acoustic reflector and the second acoustic reflector. The interdigital transducer electrode has a first side that is closer to the first acoustic reflector and a second side that is closer to the second acoustic reflector. A vertical arrangement of the vertical stack can be configured such that an acoustic wave propagation velocity of a first region between the first side and a first reflector is faster than an acoustic wave propagation velocity of a second region between the first side and the second side.

Acoustic wave device with acoustic velocity regions

An acoustic wave device that includes a spinel layer, a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of &#x3bb;. The piezoelectric layer can have a thickness than is less than &#x3bb;. In some embodiments, the acoustic wave device can include a temperature compensating layer that is disposed between the piezoelectric layer and the spinel layer.

Acoustic wave device with spinel layer and temperature compensation layer

Growing community of inventors

Osaka, Japan

Hiroyuki Nakamura