Sharp Kabushiki Kaisha Corporation

Hiroyuki Moriwaki

Makoto Nakazawa

Fumiki Nakano

Rikiya Takita

Kazutaka Hanaoka

Eiji Satoh

Akinori Kubota

Tomoko Teranishi

Wataru Nakamura

Tadashi Ohtake

Hiroki Tabuchi

Makoto Tanigawa

Takayuki Taniguchi

Hidefumi Yoshida

Hisashi Watanabe

Tsuyoshi Inoue

Yohsuke Kanzaki

Yozo Narutaki

Katsuji Iguchi

Hiromi Katoh

Takao Imaoku

Kazuhide Tomiyasu

Mayuko Sakamoto

Kazuya Yoshimura

Iori Aoyama

Koji Yabuta

Nobuhiro Kasai

Satoshi Matsumura

Takeyuki Ashida

Hao Li

Mitsuhiro Tanaka

Kenichi Ishii

Kenya Ito

Manabu Abiru

Tetsuya Tanishima

Toshio Ninomiya

A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Photoelectric conversion panel

An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

X-ray imaging panel and method of manufacturing X-ray imaging panel

A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Photoelectric conversion device and X-ray imaging device

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

The active matrix substrate includes gate lines, data lines, photoelectric conversion elements provided in pixels bounded by the gate lines and the data lines and electrically connected to the data lines, and a bias line that is connected to the photoelectric conversion elements and supplies a bias voltage to the photoelectric conversion elements. The active matrix substrate also includes first protection circuits connected to the data lines, second protection circuits connected to the gate lines, and third protection circuits connected to the bias line. Each of the first protection circuits, second protection circuits, and third protection circuits includes at least one nonlinear element. A nonlinear element in each first protection circuit has a higher resistance than a nonlinear element in at least one of each second protection circuit and each third protection circuit.

Active matrix substrate and photoelectric imaging panel with the same

An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

Imaging panel and imaging panel substrate assembly

An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

Active matrix substrate, and x-ray imaging panel

An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

Imaging device and X-ray imaging device

An imaging panel includes an active matrix substrate having pixels each with a photoelectric conversion element, a scintillator provided on a surface of the active matrix substrate, a damp-proof material entirely covering the scintillator, and an adhesive layer bonding the damp-proof material to the scintillator and the active matrix substrate. The active matrix substrate includes a first flattening film that is configured as a photosensitive resin film and is provided inside and outside a pixel region, and a first inorganic film that is provided between the first flattening film and the scintillator, is overlapped in a planar view with an entire region of the scintillator, and is in contact with the first flattening film, at least outside the pixel region. At least partial region on the first inorganic film, outside the region overlapped in a planar view with the scintillator, is covered with the adhesive layer.

Imaging panel

The invention achieves preventing from moisture penetration into an imaging panel without deterioration in detection accuracy of scintillation light. An imaging panel includes an active matrix substrate having a plurality of pixels each provided with a photoelectric conversion element, a scintillator provided on a surface of the active matrix substrate, a damp-proof material covering the active matrix substrate and the scintillator, and an adhesive layer bonding the damp-proof material to the scintillator and the active matrix substrate. The active matrix substrate includes a first flattening film overlapped in a planar view with the scintillator and configured as a photosensitive resin film. The first flattening film is entirely disposed, in a planar view, inside an adhesive layer region provided with the adhesive layer.

Provided is a technique of image pickup without being affected by leakage current on an active matrix substrate that includes photoelectric conversion elements. An active matrix substrateincludes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines, and a bias linesupplying a bias voltage to each photoelectric conversion element. Further, the active matrix substratefurther includes a plurality of data protection circuit unitsthat are connected with the data lines, respectively, and a first common linethat is connected with the data protection circuitsand has a potential equal to or lower than those of the data lines, outside the image pickup area composed of a plurality of pixels. The data protection circuit unitincludes a first data non-linear element, and the first data non-linear elementis connected in a reverse bias state between the first common lineand the data lines

Active matrix substrate and X-ray imaging panel including same

An electrophoretic element according to an embodiment of the present invention includes: a first substrate and a second substrate facing each other; and an electrophoretic layer provided between the first substrate and the second substrate, and has a plurality of pixels. In each pixel, the electrophoretic layer includes a dispersion medium, and a plurality of types of electrophoretic particles dispersed in the dispersion medium. The plurality of types of electrophoretic particles include first electrophoretic particles and second electrophoretic particles that are charged with the same polarity and have different threshold characteristics from each other. In each pixel, the electrophoretic element includes at least three electrodes to which different potentials can be applied. As seen from a layer normal direction of the electrophoretic layer, the at least three electrodes include a first electrode, a second electrode and a third electrode that are placed in this order along a certain direction that is parallel to a substrate surface of the first substrate, and the third electrode is provided in the opening region of each pixel.

Electrophoretic element and display device

An electrophoretic element according to an embodiment of the present invention includes: a first substrate and a second substrate facing each other; and an electrophoretic layer provided between the first substrate and the second substrate, and has a plurality of pixels. In each pixel, the electrophoretic layer includes a dispersion medium, and a plurality of types of electrophoretic particles dispersed in the dispersion medium. The plurality of types of electrophoretic particles include first electrophoretic particles and second electrophoretic particles that are charged with the same polarity and have different threshold characteristics from each other. In each pixel, the first substrate includes at least three electrodes to which different potentials can be applied.

The optical device () includes a first substrate (), a second substrate (), and an optical layer (). The first substrate includes a first electrode () and a second electrode () configured to be provided with mutually different electrical potentials within a pixel. The optical layer may include a medium () and a plurality of shape-anisotropic particles () dispersed in the medium. At least one of the first electrode and the second electrode may include a plurality of comb teeth portions () arranged at predetermined intervals along the first direction (D). When an electric potential difference is applied between the first electrode and the second electrode, the pixel may be configured to have an electrical field distribution in which a strong electric field region having a stronger field intensity than another region is periodically formed parallel to the surface of the optical layer along a second direction (D) orthogonal to the first direction.

Optical device

The present invention provides an optical modulator that prevents aggregation of shape-anisotropic particles. The optical modulator of the present invention includes: () a first substrate and a second substrate that are disposed to face each other; () an optical modulation layer disposed between the first substrate and the second substrate; and () a vertical alignment film. The optical modulation layer () contains: (A) liquid crystal molecules that have a positive anisotropy of dielectric constant with a value of the anisotropy &#x394;&#x3b5; of 10 or more; and (B) shape-anisotropic particles each including a core material and a coating layer that is formed of a material containing a fluorine atom and constitutes an outer surface of the shape-anisotropic particles. The first substrate includes a pair of electrodes. The liquid crystal molecules and the shape-anisotropic particles are aligned perpendicular to the first substrate with no voltage applied to the electrodes and are tilted parallel to the first substrate by a transverse electric field generated by application of voltage to the electrodes. The liquid crystal molecules have a surface energy in the range of 27 to 35 mN/m. The vertical alignment film has a surface energy in the range of 30 to 40 mN/m.

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Osaka, Japan

Hiroyuki Moriwaki