Tokyo Electron Limited

Other

Mitsubishi Gas Chemical Company, Inc.

Lintec Co., Ltd.

Hiroyuki Mori

Takayuki Niuya

Hideto Gotoh

Takuya Goto

Tetsuo Aoyama

Hiroshi Matsunaga

Eiichi Komori

Kojiro Abe

Yuichi Furuya

Ryuji Sotoaka

Yoshiya Kimura

Tomohisa Kimoto

Fukusaburo Ishihara

Takehiko Orii

Hiroshi Yano

Yasuhiko Kojima

Mitsunori Nakamori

Hirofumi Ono

Einosuke Tsuda

Takashi Kakegawa

Michihiro Ono

Hideaki Fujita

A valve device includes: valves configured to control a flow of processing gases supplied to a process vessel; a housing in which first flow paths through which the processing gases flow are formed; a heat diffuser configured to cover the housing and diffuse heat of the housing; a heating part configured to cover the housing covered with the heat diffuser and heat the housing via the heat diffuser; a supply configured to supply a coolant to a second flow path formed between the housing and the heat diffuser; and a controller configure to control the heating part to heat the housing to a first temperature when a predetermined process is performed on a target substrate, and before a start of a cleaning process of the process vessel, control the heating part to stop heating of the housing and control the supply to supply the coolant to the second flow path.

Valve device, processing apparatus, and control method

A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Source material container

A vaporizer can efficiently vaporize a liquid material under a depressurized atmosphere. The liquid material is temporarily stored in a liquid storing chamber, and is supplied to a vaporizing chamber set in the depressurized atmosphere via a small aperture. An inlet of the liquid storing chamber is opened or closed by a valve body, which is moved by an actuator controlling a degree of opening of the valve body.

Semiconductor manufacturing system having a vaporizer which efficiently vaporizes a liquid material

A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and the polymer layer is changed. Next, a second processing liquid, typically including a dimethyl sulfoxide and an amine solvent, is fed to the substrate, thereby the resist film and the polymer layer is dissolved and lifted off from the substrate. A sputtered copper particles included in the polymer layer can also be removed.

Substrate processing method and substrate processing apparatus

The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning agent and cleaning method

The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning method using an oxidizing agent, chelating agent and fluorine compound

There is provided a cleaning device capable of preventing a metal wiring layer or the like of an object to be treated, from being oxidized. The cleaning device comprises: a cleaning container having a treating space S having a slightly larger volume than that of an object W to be treated; a fluid storage tank for storing a cleaning fluid for treating the object; supply lines A through D for supplying the cleaning fluid from the fluid storage tank to the cleaning container; and reflux lines A through D for returning the cleaning fluid from the cleaning container to the fluid storage tank, wherein the cleaning container, the fluid storage tank, the supply lines and the reflux lines are associated with each other for forming closed cleaning fluid circulating lines A through D. Thus, it is possible to prevent the metal wiring layer or the like of the object from being oxidized.

Cleaning device, cleaning system, treating device and cleaning method

Growing community of inventors

Nirasaki, Japan

Hiroyuki Mori