Kabushiki Kaisha Komatsu Seisakusho

Komatsu Corporation

Hiroyuki Mizukami

Shinichi Fujimoto

Takeshi Kajihara

Kouichi Ishida

Yasuhiko Hata

Toshio Itoh

A thermoelectric power module capable of withstanding a long time use in a high temperature environment where a temperature (Th) of a higher temperature portion exceeds 250&#xb0; C. The thermoelectric power module includes: a thermoelectric power element; a first diffusion prevention layer consisting of molybdenum (Mo) and disposed on a surface of the thermoelectric power element; a second diffusion prevention layer consisting of an intermetallic compound of nickel-tin (Ni&#x2014;Sn) and disposed on a surface of the first diffusion prevention layer opposite to the thermoelectric power element side; an electrode; a third diffusion prevention layer consisting of an intermetallic compound of nickel-tin (Ni&#x2014;Sn) and disposed on a surface of the electrode; a solder layer containing lead (Pb) at not less than 85% and configured to join the second diffusion prevention layer and the third diffusion prevention layer to each other.

Thermoelectric power module

In an electro-photographic photosensor wherein amorphous silicon as a photoconductive layer is formed on the surface of an aluminum base which has been processed to be alumite layer consisting of a porous layer and barrier layer, amorphous silicon is formed directly on the surface of the porous layer in which porosities is remained by the elimination of the process of sealing porosities. Further, when aluminum is processed by electrolyzation to be alumite, thickness of the barrier layer and the porous layer are appropriately set to provide good adhesive strength of amorphous silicon to the aluminum base and good electrostatic characteristics by adjusting respectively a voltage and duration of the electrolyzation.

Method of fabricating an electrophotographic photosensor

The photosensitive member is constituted by a supporting member made of pure aluminum coated with a porous amorphous aluminum oxide anhydride layer, a photoconductive layer formed on the supporting member and comprises a hydrogenated amorphous silicon layer, an intermediate layer laminated on the photoconductive layer and consists of amorphous silicon nitride or amorphous silicon carbide and a surface layer laminated on the intermediate layerand consists of hydrogen containing amorphous boron nitride.

Growing community of inventors

Hiratsuka, Japan

Hiroyuki Mizukami