Mitsubishi Electric Corporation

Hiroyuki Miyanishi

Junya Suzuki

Takanobu Kajihara

Katsuhiko Omae

Muneaki Mukuda

Shunsuke Fushie

Yuki Okabe

Daisuke Nakashima

Masahiro Motooka

Yuki Nakamatsu

Tomohiro Inoue

Atsuki Fujita

Tokiyoshi Tanigawa

In a rotary electric machine in which a controller and a heat sink are arranged in an extending direction of an output shaft of a motor, in order to provide a rotary electric machine which secures a heat rejection performance and an insulation performance of a semiconductor device to be mounted to the controller and is downsized as a whole, the controller includes a semiconductor device having a drive circuit provided so as to correspond to a stator winding of the motor, and the semiconductor device has a main face held in close contact with the heat sink. On a close contact face between the semiconductor device and the heat sink, a drive circuit is formed so as to extend along an outer edge portion of the heat sink to increase a cooling area.

Rotary electric machine having heat sink for semiconductor device of controller

This semiconductor device includes: a first insulation resin portion formed on the mounting surface side of a lead frame; a second insulation resin portion formed on the heat dissipation surface side of the lead frame; and a heatsink fixed to the heat dissipation surface of the second insulation resin portion, wherein the second insulation resin portion has a second skirt portion formed at an end of a thin molded portion, the first insulation resin portion has a first skirt portion covering the second skirt portion, and an outer peripheral surface part of the second skirt portion has a first end connected to the lead frame and the first skirt portion, a second end connected to the heatsink, and at least one bent portion formed between the first end and the second end.

Semiconductor device

In a semiconductor device, a thinly-molded portion covering a whole of a heat dissipating surface portion of a lead frame and a die pad space filled portion are integrally molded from a second mold resin, because of which adhesion between the thinly-molded portion and lead frame improves owing to the die pad space filled portion adhering to a side surface of the lead frame. Also, as the thinly-molded portion is partially thicker owing to the die pad space filled portion, strength of the thinly-molded portion increases, and a deficiency or cracking is unlikely to occur.

In a semiconductor device, a first skirt portion molded from a first mold resin and a second skirt portion molded from a second mold resin are provided on a heat dissipating surface of a lead frame. Also, a thinly-molded portion is molded integrally with the second skirt portion from the second mold resin. According to this kind of configuration, adhesion between the thinly-molded portion and lead frame is high, and the semiconductor device with excellent heat dissipation and insulation is obtained.

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Tokyo, Japan

Hiroyuki Miyanishi