Semiconductor Energy Laboratory Co., Ltd.

Fuji Xerox Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Samsung Electronics Co., Ltd.

Aisin Corporation

Aisin Aw Co., Ltd.

Hiroyuki Miyake

Shunpei Yamazaki

Jun Koyama

Kouhei Toyotaka

Kei Takahashi

Hideaki Shishido

Hideaki Kuwabara

Atsushi Umezaki

Yutaka Shionoiri

Koji Kusunoki

Seiko Inoue

Junichiro Sakata

Yoshiharu Hirakata

Kenichi Okazaki

Masashi Tsubuku

Kosei Noda

Hisao Ikeda

Yoshifumi Tanada

Tsutomu Abe

Daisuke Matsubayashi

Ryo Arasawa

Masayuki Sakakura

Ryo Hatsumi

Mitsuaki Osame

Daisuke Kubota

Masahiko Hayakawa

Junpei Momo

Tomoyuki Iwabuchi

Ryota Fukumoto

Shinpei Matsuda

Hajime Kimura

Kazunori Watanabe

Masami Jintyou

Yukinori Shima

Daisuke Kurosaki

Kiyoshi Kato

Junichi Koezuka

Yuugo Goto

Tatsuya Takahashi

Hidekazu Miyairi

Kazuhiro Sakai

Yasuhiro Jinbo

Tetsuo Iyoda

Tomoaki Atsumi

Takahiro Kawakami

Yasuharu Hosaka

Takuya Hirohashi

Kohei Yokoyama

Minoru Takahashi

Ikuko Kawamata

Yoshitaka Dozen

Yoshinori Yamaguchi

Hiroyuki Hotta

Jun Shingu

Yasuji Seko

Takaaki Nagata

Satoshi Seo

Hideomi Suzawa

Toshinari Sasaki

Atsuo Isobe

Hideki Uochi

Takeshi Osada

Tetsuji Ishitani

Tatsuya Arao

Susumu Kawashima

Takashi Hamochi

Takashi Kawai

Nobuhiro Inoue

Takahiro Fukutome

Shou Nagao

Yohei Momma

Masahiro Katayama

Teruaki Ochiai

Tsutomu Murakawa

Toru Tanabe

Shuhei Yoshitomi

Yasuyuki Sonoda

Norikazu Yamada

Koki Uwatoko

Yasuhiko Takemura

Kengo Akimoto

Takayuki Ikeda

Masaaki Hiroki

Yoshiaki Oikawa

Kensuke Yoshizumi

Minoru Yoshida

Takashi Nakagawa

Yuji Iwaki

Masataka Nakada

Masashi Fujita

Kei Tanaka

Tatsuji Nishijima

Takuya Matsuo

Mayumi Mikami

Shigeyasu Mori

Kentaro Takano

Hiroshi Matsukizono

Chikaho Ikeda

Shin Takeuchi

Takahiro Iguchi

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Light-emitting device

The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

Method for driving liquid crystal display device

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Semiconductor device and manufacturing method thereof

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Semiconductor device and electronic device including semiconductor device

A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. The thickness of the first substrate and the second substrate is each 1 μm to 200 μm inclusive. The first bonding layer includes a region with a thickness of 50 nm to 10 μm inclusive.

Touch panel

A display device with less light leakage and excellent contrast is provided. A display device having a high aperture ratio and including a large-capacitance capacitor is provided. A display device in which wiring delay due to parasitic capacitance is reduced is provided. A display device includes a transistor over a substrate, a pixel electrode connected to the transistor, a signal line electrically connected to the transistor, a scan line electrically connected to the transistor and intersecting with the signal line, and a common electrode overlapping with the pixel electrode and the signal line with an insulating film provided therebetween. The common electrode includes stripe regions extending in a direction intersecting with the signal line.

Liquid crystal display device comprising a pixel portion having a plurality of transistors

To increase the detection sensitivity of a touch panel, provide a thin touch panel, provide a foldable touch panel, or provide a lightweight touch panel. A display element and a capacitor forming a touch sensor are provided between a pair of substrates. Preferably, a pair of conductive layers forming the capacitor each have an opening. The opening and the display element are provided to overlap each other. A light-blocking layer is provided between a substrate on the display surface side and the pair of conductive layers forming the capacitor.

A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

Semiconductor device

It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

Memory device and semiconductor device

Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Display device

A superimposed image display device is configured to: acquire a recommended lane in which a vehicle is recommended to travel on a road on which the vehicle is currently traveling; identify a lane of travel that is a lane in which the vehicle is currently traveling on the road on which the vehicle is currently traveling; acquire a confidence indicating how confident an identification result of the lane of travel is; and display a guide object providing guidance on the recommended lane in a display mode according to the confidence.

Superimposed image display device

A scan line to which a selection signal or a non-selection signal is input from its end, and a transistor in which a clock signal is input to a gate, the non-selection signal input to a source, and a drain is connected to the scan line are provided. A signal input to the end of the scan line is switched from the selection signal to the non-selection signal at the same or substantially the same time as the transistor is turned on. The non-selection signal is input not only from one end but also from both ends of the scan line. This makes it possible to inhibit the potentials of portions in the scan line from being changed at different times.

A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided. The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor; a clock signal is input to a gate electrode of the first switching transistor; and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.

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Kanagawa, Japan

Hiroyuki Miyake