Hitachi-kokusai Electric Inc.

Hiroyuki Mitsui

Susumu Nishiura

Kaori Inoshima

Hiroshi Ekko

Masaaki Ueno

Masashi Sugishita

Osamu Morita

Tsukasa Iida

Yoshihiko Nakagawa

Kenichi Fujimoto

Kazuo Nakaya

Masao Aoyama

A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit.

Substrate processing apparatus, method of controlling substrate processing apparatus, method of maintaining substrate processing apparatus, and recording medium

Provided is a method of automatically setting, in a recipe, a process parameter (PP) according to the number of substrates to be processed. The method includes (a) displaying a process parameter of a process recipe on a display unit; (b) displaying a parameter name in a process parameter file on the display unit; (c) generating a first recipe by substituting the process parameter with the parameter name; (d) downloading the first recipe and one of a plurality of condition tables corresponding to the selected number of substrates when the number of substrates to be processed in a processing chamber is selected; and (e) generating a second recipe by substituting the process parameter of the downloaded one of the condition tables for the parameter name in the downloaded first recipe.

Substrate processing apparatus, method of manufacturing semiconductor device, and method of generating recipe

Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers. Product and filler wafers are accommodated and heat-treated in the reaction vessel while controlling a heating unit using calculation results obtained using at least the calculation parameter and deviation between a set temperature and a temperature detected in the heating unit by a temperature detector.

Substrate processing apparatus, semiconductor device manufacturing method and temperature controlling method

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Toyama, Japan

Hiroyuki Mitsui