Hitachi, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Ricoh Company, Ltd.

Hiroyuki Matsushima

Digh Hisamoto

Naoki Tega

Takashi Oeda

Kazuhiro Suzuki

Ryuta Tsuchiya

Shigeo Honma

Kyoko Kojima

Hiroshi Morishima

Tokuhiro Tsukiyama

Hitomi Hanyu

Kumiko Konishi

Yoji Tomono

Ryoh Takemoto

Kyoko Saito

In a semiconductor device using a wide bandgap semiconductor material having a bandgap larger than that of silicon, reliability of the semiconductor device is improved by achieving a structure in which electric field strength in the vicinity of an outer end portion of a semiconductor chip is relaxed. A side surface of the semiconductor chip CHPis formed of a region Rincluding a first corner, a region Rincluding a second corner, and a region Rinterposed between the region Rand the region R. At this point, in a case of defining a minimum film thickness of a high electric field-resistant sealing member MR in the region Ras tand defining a maximum film thickness of the high electric field-resistant sealing member MR in the region Ras t, a relation of t&#x2264;1.5&#xd7;tis satisfied.

Semiconductor device, manufacturing method for semiconductor device, semiconductor module, and power conversion device

When a gate length is reduced for the purpose of reducing on-resistance in a SiC DOMSFET, it is difficult to achieve both of the reduction of on-resistance by the reduction of gate length and the high element withstand voltage at the same time. In the present invention, a body layer is formed after the source diffusion layer region is formed and then a portion of the source diffusion layer region is recessed. Because of the presence of the body layer, the distances between the source diffusion region and respective end portions can be increased, a depletion layer is effectively expanded, and electric field concentration at the end portions can be suppressed, thereby improving withstand voltage characteristics. Consequently, the present invention can provide a silicon carbide semiconductor device that achieves both of the reduction of channel resistance by the reduction of gate length and the high element withstand voltage at the same time.

Silicon carbide semiconductor device and manufacturing method thereof

In a MOSFET using a SiC substrate, a source region having low resistance and high injection efficiency is formed without performing a high-temperature heat treatment. A vertical Schottky barrier transistor in which a source region SR on a SiC epitaxial substrate is constituted by a metal material is formed. The source region SR composed of a metal material can be brought into a low resistance state without performing a high-temperature activation treatment. Further, by segregating a conductive impurity DP at an interface between the source region SR composed of a metal material and the SiC epitaxial substrate, the Schottky barrier height can be reduced, and the carrier injection efficiency from the source region SR can be improved.

Semiconductor device and method for producing the same

In order to construct an integrated storage system by reinforcing collaboration of components or functions of a storage system in which a storage area network (SAN) is used, in a computer system having multiple client computers, multiple various servers, multiple various storages which keep data, and a local area network (LAN) which connects the computers and the servers, a storage area network (SAN) which lies between the servers and storages forms a switched circuit network which is capable of connecting any server and any storage through fiber channel FC switches. The computer system further includes a terminal which is equipped with operation and management software which performs storage management including management of logical volumes in the various storages, data arrangement, error monitoring, management of setting up the FC switches, and backup for data in the storages.

Computer system having a storage area network and method of handling data in the computer system

Growing community of inventors

Tokyo, Japan

Hiroyuki Matsushima