Seiko Epson Corporation

Kabushiki Kaisha Toshiba

Hiroyuki Matsuo

Kunihiro Miyazaki

Toshiki Nakajima

Tsuyoshi Kozai

The ejection driving pulse is a voltage waveform including: a first variation section; a hold section; and a second variation section. The second variation section includes: a first variation component in which the potential is varied in the second direction from the termination potential of the first variation section; an intermediate hold component in which the termination potential of the first variation component holds for a given time; and a second variation component in which the potential is varied in the second direction from the termination potential of the first variation component. The potential of the intermediate hold component is in the range from 50% to 60% of the potential of the hold section. A potential inclination of the second variation component is steeper than a potential inclination of the first variation component.

Liquid ejecting apparatus and method of controlling liquid ejecting apparatus

A potential inclination of the second variation component in the liquid-kind ejection pulse of the first signal is gentler than a potential inclination of the first variation component. A potential inclination of the second variation component in the liquid-kind ejection pulse of the second signal is steeper than the potential inclination of the first variation component. A ratio of the potential of the intermediate hold component to the potential of the hold section is larger in the liquid-kind ejection pulse of the second signal than in the liquid-kind ejection pulse of the first signal.

The driving signal generation unit generates a leading driving pulse that is ahead in a unit cycle and a following driving pulse that follows the leading driving pulse; the leading driving pulse is set so that, in the case where liquid droplets are ejected simultaneously from multiple adjacent nozzles, the flight speed of the ejected liquid droplets located toward the central area in a nozzle row direction is higher than the flight speed of the ejected liquid droplets located toward the end areas in the nozzle row direction; and the following driving pulse is set so that, of the liquid droplets simultaneously ejected from the multiple adjacent nozzles, the flight speed of the ejected liquid droplets located toward the end areas is higher than the flight speed of the liquid droplets located toward the central area.

Liquid ejecting apparatus

A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NHOH and HF wherein the relationships 0.30&#x2266;X/Y&#x2266;0.78 and 0.03&#x2266;Y&#x2266;6.0 are satisfied, where X represents a concentration [mol/L] of NHOH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from HO. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.

Semiconductor substrate treating method, semiconductor component and electronic appliance

According to one embodiment, an electronic device includes a connector, and a flexible printed wiring board having a board main body provided with a first surface with a conductor provided thereon, a second surface opposite to the first surface, and a front end contacting the connector, and a reinforcing plate contacting the second surface at the front end to reinforce the board main body. A projection is provided on the connector in contact with the flexible wiring board. The reinforcing plate includes a recess portion in which the projection is fitted. The recess portion has a space increased in size toward and opening to an end face of the reinforcing plate corresponding to the front end, and an opening provided in the end face and communicating with the space.

Electronic device and flexible printed wiring board

A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.

Method of manufacturing a semiconductor device, and a semiconductor substrate

An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiOas a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiOby the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.

Growing community of inventors

Shiojiri, Japan

Hiroyuki Matsuo