Mitsubishi Electric Corporation

Hiroyuki Masumoto

Yoshitaka Otsubo

Manabu Matsumoto

Hiroshi Kawata

Rei Yoneyama

Naoki Yoshimatsu

Tatsuya Kawase

Hidetoshi Ishibashi

Keisuke Eguchi

Shintaro Araki

Minoru Egusa

Takuya Kitabayashi

Taketo Nishiyama

Masayuki Nishiyama

A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.

Semiconductor device comprising semiconductor element; insulating component; lead electrode; and first bonding material, second bonding material, third bonding material, and fourth bonding material made of a same material

A manufacturing method of an insert case for a semiconductor device includes: placing a terminal inside a mold and fixing a central portion of the terminal by bringing a slide core into contact with the central portion of the terminal; with the central portion of the terminal fixed by the slide core, filling an inside of the mold with resin to mold an insert case; and separating the slide core from the terminal and taking out the insert case from the mold.

Manufacturing method of insert case for semiconductor device and semiconductor device

A semiconductor device includes: a metal sheet; an insulating pattern provided on the metal sheet; a power circuit pattern and a signal circuit pattern that are provided on the insulating pattern; a power semiconductor chip mounted on the power circuit pattern; and a control semiconductor chip that is mounted on the signal circuit pattern and controls the power semiconductor chip. The power semiconductor chip is bonded to the power circuit pattern with a first die bonding material comprised of copper, and the control semiconductor chip is bonded to the signal circuit pattern with a second die bonding material.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a base plate, a semiconductor chip, a case, a heat dissipation member, and a plurality of attachment portions. The semiconductor chip is held on a front surface side of the base plate. The case is provided on a front surface of the base plate so as to house the semiconductor chip inside. The heat dissipation member is provided on a back surface of the base plate and contactable with a heat sink for cooling the semiconductor chip. The plurality of attachment portions have a function of attaching the case to the heat sink. Ends of the heat dissipation member in a direction extending along a long side of a plurality of sides that form a shape defined by connecting positions of the plurality of attachment portions in plan view are located between the two attachment portions that form the long side.

Semiconductor device and semiconductor module with improved heat dissipation

The power semiconductor module includes a power semiconductor assembly and a heat transfer member. The power semiconductor assembly includes a circuit board and a case. The circuit board includes an insulating substrate. The second attachment surface to which the heat transfer member is attached is recessed from the first attachment surface to which the heat sink is attached. The maximum recessed distance of the second attachment surface from the first attachment surface is smaller than the original thickness of the heat transfer member, and is greater than the lower limit thickness of the heat transfer member.

Power semiconductor module and power converter

Each of a plurality of terminals has a first portion and a second portion being a connection target for a semiconductor element. A manufacturing method of a housing includes a first step arranging, for a lower mold provided with a plurality of holes each of which is a target into which the first portion is inserted, a nest having a third portion covering at least one of the holes, a second step arranging, for the lower mold with the nest being arranged therein, the plurality of terminals by inserting the first portion into the hole not covered by the third portion, a third step arranging an upper mold on the lower mold with the nest and the plurality of terminals being arranged therein, and a fourth step, which is executed after the third step, obtaining the housing by performing resin molding using the lower mold and the upper mold.

Manufacturing method of housing for semiconductor device

A semiconductor device includes: an insulating substrate; a first semiconductor element connected to the insulating substrate; a conductive member disposed on the insulating substrate, and including a first opposing portion and a second opposing portion located opposite each other with respect to the first semiconductor element in plan view; a first wire connected to the first semiconductor element and the first opposing portion; and a second wire connected to the first semiconductor element and the second opposing portion, and located opposite the first wire with respect to a connection point where the first wire and the first semiconductor element are connected to each other in plan view.

Semiconductor device

A semiconductor module includes: a case; a semiconductor chip provided inside the case; a seal material injected to inside of the case and sealing the semiconductor chip; and a lid provided inside the case and contacting an upper surface of the seal material, wherein a tapered portion is provided at an end portion of the lid on an upper surface side, a gap is provided between a side surface of the end portion of the lid and an inner side surface of the case, and the seal material crawls up to the tapered portion through the gap.

Semiconductor module

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

A semiconductor device includes: a semiconductor chip; a case storing the semiconductor chip; a wire bonded to the semiconductor chip; a cover fixed inside the case and including a concave portion disposed above the semiconductor chip and the wire; and a sealing resin potted inside the case and sealing the semiconductor chip, the wire and the cover, wherein the sealing resin is not filled in the concave portion so that a cavity is provided.

Semiconductor device and manufacturing method thereof

A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case.

Power semiconductor device

A semiconductor device includes: a substrate having an insulating resin and a metal pattern provided on the insulating resin; a mounted component mounted on the metal pattern; and an epoxy resin encapsulating the metal pattern and the mounted component, wherein a slit is provided in the metal pattern around the mounted component, and the insulating resin exposed from the metal pattern and the epoxy resin are brought into intimate contact with each other in the slit.

Growing community of inventors

Tokyo, Japan

Hiroyuki Masumoto