Tokuyama Corporation

Other

Hiroyuki Kono

Hiroshi Kato

Yoshikuni Tateyama

Katsumi Yamamoto

Kenichi Ishizu

Kenji Fukunaga

Kazuhiko Hayashi

Naoto Mochizuki

Yoshinori Tagashira

Provided is a cationic polymer-modified silica dispersion which comprises silica fine particles having an average particle diameter of less than 200 nm and a cationic polymer and which does not bring about coagulation of the silica particles. The above dispersion which is diluted to a solid concentration of 1.5% by weight is characterized by having a light scattering index (n value) of 2.0 or more. The above dispersion can be produced by oppositely-colliding a mixed solution obtained by mixing silica with a cationic polymer in a polar solvent at a treating pressure of 300 kgf/cm or more or passing it through an orifice under a condition that a pressure difference between the inlet side and the outlet side of the orifice is 300 kgf cm or more.

Cationic polymer-modified silica dispersion and production process for the same

A polishing slurry having a high polishing rate is provided. A polishing slurry comprising water, fumed silica having an average primary particle size of 9 to 60 nm and spherical silica having an average primary particle size of 40 to 600 nm excluding the fumed silica, wherein a content of the whole silicas obtained by totaling the fumed silica and the spherical silica falls in a range of 1 to 40% by weight, and a process for polishing a semiconductor device using the polishing slurry described above.

Polishing slurry and polishing method

Provided is a high purity polishing slurry which provides a material to be polished with a high scratch resistance and has a high polishing efficiency and which less contaminates the material to be polished. The polishing slurry comprises water and silica particles dispersed in water, wherein the above silica particles have an average primary particle size of 50 to 300 nm and a refractive index of 1.41 to 1.44 and are synthesized in a liquid phase and produced without passing through a drying step; and the K value is 5&times;10 mol/m or more. Further, a polishing process for a semiconductor wafer using the above polishing slurry is provided.

Growing community of inventors

Shiki, Japan

Hiroyuki Kono