Shimadzu Corporation

Other

Institute of National Colleges of Technology, Japan

Osaka University

Tohoku-microtec Co., Ltd.

Hiroyuki Kishihara

Toshinori Yoshimuta

Koichi Tanabe

Takahiro Doki

Satoshi Sano

Satoshi Tokuda

Akira Horiba

Kenji Kimura

Taro Shirai

Yukihisa Wada

Masatomo Kaino

Toshiyuki Sato

Shingo Furui

Minoru Noda

Takuro Izumi

Kazuhiko Hashimoto

Akina Yoshimatsu

Ryuichi Kubo

Tomonori Mukaigawa

Masanori Okuyama

Heiji Watanabe

Takuji Hosoi

Takayoshi Shimura

Shoji Kuwabara

Tamotsu Okamoto

Makoto Motoyoshi

Jun-ichi Kita

Tatsuro Usuki

Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase gratingprovided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase gratingis observed in a moire pattern of a long period. This moire image of a long period changes in the positions due to the minute change in the relative position between the phase gratingand the absorption grating, so it becomes possible to detect the minute change of the relative position between the radiation source, the phase grating, and the absorption gratingfrom the image of the reference area.

X-ray phase contrast imaging apparatus

This X-ray phase contrast imaging apparatus () includes an X-ray source () that radiates continuous X-rays, a first grating () that forms a self-image, a second grating (), a detector () that detects the continuous X-rays, and a third grating () arranged between the detector () and the first grating. The first grating (), the second grating (), and the third grating () are arranged so as to satisfy conditions of predetermined formulas.

An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.

Radiation phase contrast imaging device

In a method for manufacturing a radiation detector, counter pixel electrodesare formed on a counter substrateat positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodesare further formed on the counter pixel electrodes. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes. The bump electrodesare cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate

An X-ray phase-contrast imaging device capable of easily performing imaging of an object using X-rays of plural energies is provided. The disclosed exemplary configuration includes an X-ray source of a dual energy output type, and an FPD having a high energy X-ray detection surface and a low energy X-ray detection surface so that two types of imaging, imaging by high energy X-ray and imaging by low energy X-ray, can be performed. By imaging so as to scan the object while changing the relative position of the imaging system and the object, two types of imaging can be completed at once.

Radiation-phase-contrast imaging device

Provided is a radiation phase-contrast imaging device capable of assuredly detecting a self-image and precisely imaging the internal structure of an object. According to the configuration of the present invention, the longitudinal direction of a detection surface of a flat panel detector is inclined with respect to the extending direction of an absorber in a phase grating. This causes variations in the position (phase) of a projected stripe pattern of a self-image at different positions on the detection surface. This is therefore expected to produce the same effects as those obtainable when a plurality of self-images are obtained by performing imaging a plurality of times in such a manner that the position of the projected self-images on the detection surface varies. This alone, however, results in a single self-image phase for a specific region of the object. Therefore, according to the present invention, it is configured such that imaging is performed while changing the relative position of the imaging system and the object.

Radiation phase-contrast imaging device

Provided is a radiation phase difference imaging apparatus in which a separation distance between a phase grating and a radiation detector is optimized. The separation distance between the phase grating and a detection surface of an FPD is determined based on the magnitude of noise corruption in a self-image projected onto the detection surface. The magnitude of the effect of the noise is used as a basis for assessing the separation distance. It is determined whether a distance Zd is appropriate for imaging, based on the magnitude of noise corruption in the self-image in a self-image picture which is obtained when the distance Zd is the distance between the phase grating and the detection surface of the FPD. The separation distance can thus be optimized based on actual conditions of an actual X-ray source that emits a plurality of types of X-rays.

A movable collimator is realized with a simple mechanism in a radiation phase-contrast image capturing device. A collimator is integrated with a multi-slit or a phase grating to provide a simpler device configuration. In some examples, the collimator and the multi-slit or phase grating may be configured to move while still providing image capturing.

Radiation phase-contrast image capturing device

In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.

Semiconductor detector

A graphite substrate is processed to have surface unevenness in a range of 1 &#x3bc;m to 8 &#x3bc;m. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

Radiation detector and method of manufacturing the same

In an X-ray strip detector, at least one joining semiconductor film are formed on surface of a sensitive semiconductor film, on the part of X-strips and Y-strips, that is sensitive to incident X-rays to generate electric charge, and on at least an entire sensitive region of a conversion film. The joining semiconductor film has higher resistance value than resistance value of the sensitive semiconductor film. Accordingly, when the electric charge generated in the sensitive semiconductor film are collected in the X-strips and the Y-strips, movement of the electric charge into other adjacent strip electrodes is avoidable. Consequently, crosstalk can be suppressed that the electric charge leak to the adjacent strip electrodes.

Radiation detector

A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.

Method of manufacturing radiation detector

Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.

The radiation image pickup apparatus of this invention can obtain an accurate temperature characteristic of dark current noise, the dark current noise being caused by dark current flowing through an X-ray conversion layer, by obtaining dark image signals at varied times for accumulating in capacitors charge signals converted by an X-ray converting layer. Consequently, the noise due to the dark current can be removed with high accuracy by removing periodically acquired offset signals from X-ray detection signals acquired at a time of X-ray image pickup, and correcting variations of the dark current noise due to a difference in temperature between a time of offset signal acquisition and the time of X-ray image pickup, using the temperature characteristic of the dark current noise.

Light or radiation image pickup apparatus

According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

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Kyoto, Japan

Hiroyuki Kishihara