Shin-Etsu Chemical Co., Ltd.

Kanazawa University

National Institute of Advanced Industrial Science and Technology

Other

Industrial Science and Technology

National Institute of Advanced

National University Corporation Kanazawa University

Hiroyuki Kawashima

Masahiko Ogura

Hitoshi Noguchi

Toshiharu Makino

Satoshi Yamasaki

Hiromitsu Kato

Norio Tokuda

Shozo Shirai

Daisuke Takeuchi

Takao Inokuma

Tsubasa Matsumoto

Daisuke Kuwabara

It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

Foundation substrate for producing diamond film and method for producing diamond substrate using same

A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Diamond substrate and freestanding diamond substrate

Method for manufacturing diamond substrate

The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

Growing community of inventors

Tsukuba, Japan

Hiroyuki Kawashima