Kabushiki Kaisha Topcon

Sony Corporation

Sony Semiconductor Solutions Corporation

Kabushiki Kaisha Toshiba

Toyo Ink Mfg. Co., Ltd.

Nissin Foods Holdings Co., Ltd.

Avantest Corporation

Hiroyuki Kawashima

Akio Kobayashi

Masaharu Tokuhara

Susumu Saito

Kei Masunishi

Akihiro Koga

Isao Minegishi

Fumio Ohtomo

Hisafumi Motoe

Hiroyuki Kita

Noriko Saito

Ryo Furukawa

Hitoshi Okano

Osamu Nishimura

Yoshihisa Kagawa

Toshio Sarugaku

Ryoichi Nakamura

Yuusaku Kobayashi

Shinya Sugiura

Manabu Matsuzaki

Hiroshi Tsukawaki

Mitsuaki Hirata

Kenichi Murata

Kazushige Yamamoto

Masaki Okamoto

Makoto Fujino

Yuji Okumura

Tetsuya Kugimiya

Masayuki Sekimura

Yoshiyuki Enomoto

Gaku Takeuchi

Takao Tanabe

Noriko Takeda

Shigetaka Mori

Katsuhisa Kugimiya

Katsuhiko Sawamura

Hirotake Maruyama

Satoshi Shimoyama

Takuma Matsuno

Noriyasu Kiryu

Tetsu Otsuji

Atsushi Betto

Shuichi Obana

Seiko Isomoto

Masumi Toyo Ink Mfg Co Ltd Takano

Yoshiaki Toyo Ink Mfg Co Ltd Nakagami

Michihisa Toyo Ink Mfg Co Ltd Kofuji

Toshiyuki Toyo Ink Mfg Co Ltd Irie

Hideki Toyo Ink Mfg Co Ltd Yasuda

Shinichiro Toyo Ink Mfg Co Ltd Watanabe

Yoshimitsu Toyo Ink Mfg Co Ltd Ishizuka

A semiconductor device according to an embodiment of the present disclosure includes: a first substrate including a first junction portion; and a second substrate including a second junction portion. The second junction portion is joined to the first junction portion. The first substrate further includes a first multilayer wiring layer in which one surface of a first wiring line faces a first insulating layer and another surface opposed to the one surface is in contact with a second insulating layer. The first multilayer wiring layer is electrically coupled to the first junction portion via the first insulating layer. The first wiring line is formed closest to a junction surface with the second substrate. The second insulating layer has a lower relative dielectric constant than a relative dielectric constant of the first insulating layer.

Semiconductor device and method of manufacturing semiconductor device

The present technology relates to a semiconductor device in which a MIM capacitive element can be formed without any process damage, and a method for manufacturing the semiconductor device. In a semiconductor device, wiring layers of a first multilayer wiring layer formed on a first semiconductor substrate and a second multilayer wiring layer formed on a second semiconductor substrate are bonded to each other by wafer bonding. The semiconductor device includes a capacitive element including an upper electrode, a lower electrode, and a capacitive insulating film between the upper electrode and the lower electrode. One electrode of the upper electrode and the lower electrode is formed with a first conductive layer of the first multilayer wiring layer and a second conductive layer of the second multilayer wiring layer. The present technology can be applied to a semiconductor device or the like formed by joining two semiconductor substrates, for example.

Semiconductor device and method for manufacturing the same

To provide a semiconductor device, an image pickup device, and a method for manufacturing the semiconductor device that reduce wiring capacity by using gaps and maintain mechanical strength and reliability. A semiconductor device including: a multilayered wiring layer in which insulating layers and diffusion preventing layers are alternately laminated and a wiring layer is provided inside; a through-hole that is provided to penetrate through at least one or more insulating layers from one surface of the multilayered wiring layer and has an inside covered with a protective side wall; and a gap that is provided in at least one or more insulating layers immediately below the through-hole.

Semiconductor device, image pickup device, and method for manufacturing semiconductor device

To reduce the capacitance between wiring lines of a semiconductor device, while maintaining mechanical strength and reliability. A semiconductor device including: a multilayer wiring layer in which a plurality of interlayer films and a plurality of diffusion preventing films are alternately stacked, and a wiring line is formed in the interlayer films; a contact via that penetrates a via insulating layer formed on one surface of the multilayer wiring layer, and is electrically connected to the wiring line of the multilayer wiring layer; a through hole that penetrates at least one of the interlayer films and the diffusion preventing films from the other surface of the multilayer wiring layer on the opposite side from the one surface; and an air gap that is connected to the through hole, and is formed in at least one of the interlayer films, to expose the contact via.

Semiconductor device

A method of manufacturing a semiconductor device, includes: forming an insulating film on a first surface of a semiconductor substrate; and forming a hydrogen supply film on a second surface facing the first surface of the semiconductor substrate, the hydrogen supply film containing one or more of silicon oxide, TEOS, BPSG, BSG, PSG, FSG, carbon-containing silicon oxide, silicon nitride, carbon-containing silicon nitride, and oxygen-containing silicon carbide.

Semiconductor device and method of manufacturing the same

A solid-state imaging device includes a semiconductor substrate configured to include a solid-state imaging element that is provided with a photoelectric conversion region, and a scribe line region that is provided along a periphery of the solid-state imaging element, a wiring layer that is formed to be layered on the semiconductor substrate, a support substrate that is formed to be layered on the wiring layer, and a groove that is provided between a blade region in the scribe line region and the solid-state imaging element, in the semiconductor substrate and penetrates through the semiconductor substrate.

Solid-state imaging device, method for manufacturing solid-state imaging device, method for manufacturing solid-state imaging element, and semiconductor device

There is provided a brightening ink composition for printing intended for realizing a heat insulating foamed paper container produced by foaming a low-melting point film by a heat treatment, such as a heat insulating foamed paper cup, the brightening ink composition conforming to the foaming without the occurrence of ink splits (cracks) upon foaming, having very small differences in level between the brightening printed areas and other printed areas at the container surface after foaming, making the container surface almost smooth, and having excellent design applicability and aesthetic properties as well as excellent heat resistance and print quality. A brightening ink composition containing a brightening material that imparts a sense of brightness, silicon dioxide, a binder resin and a solvent is prepared, and the brightening ink composition is used to form a printed layer of a paper container material for producing a heat insulating foamed paper container.

Brightening ink composition for printing, paper container material using the brightening ink composition, and heat insulating foamed paper container

An ink composition having a colorant; a binder resin; and a solvent; wherein the elongation ratio of the binder resin is 400% to 3,000%; wherein the binder resin comprises a urethane resin and a vinyl chloride/vinyl acetate copolymer, and the mixing ratio of the urethane resin:vinyl chloride/vinyl acetate copolymer relative to the total weight of the urethane resin and the vinyl chloride/vinyl acetate copolymer is 50:50 to 99:1; and wherein the urethane resin comprises a urethane-urea resin that is obtained by a process comprising reacting dibutylamine and a urethane prepolymer obtained by a process comprising reacting a polymeric polyol component having a number average molecular weight of 500 to 10,000 and an organic diisocyanate component having terminal isocyanate groups. A heat insulating foamed paper container material having at least one print pattern formed from said ink composition.

Ink composition for printing, paper container material using the ink composition, and heat insulating foamed paper container

A wavefront aberration compensating apparatus includes: a deformable mirror which compensates a wavefront aberration of a light flux entered, the deformable mirror including a plurality of electrodes, and a thin-film mirror which changes a configuration thereof in accordance with a voltage value applied to each of the electrodes; an optical system provided with the deformable mirror, and including an object subjected to aberration compensation; a wavefront sensor which receives the light flux traveled through the object and the deformable mirror, and which measures the wavefront aberration of the light flux; and a controller configured to calculate the voltage value applied to each of the electrodes, on the basis of differences, from a signal outputted from the wavefront sensor, between application points on the thin-film mirror and target points both corresponding to the electrodes, respectively, and to repeat compensation of the configuration of the thin-film mirror of the deformable mirror on the basis of the calculated voltage value, such that the wavefront aberration of the light flux measured by the wavefront sensor is suppressed.

Wavefront aberration compensating apparatus and opthalmologic unit having the same

A deformable mirror device includes a substrate; a plurality of electrodes provided on the substrate; a spacer disposed on the substrate; a support member disposed above the spacer and having an opening passing through from a first face of the support member facing to the substrate to a second face of the support member opposite from the first face; a deformable electrode film formed below the first face of the support member so as to be opposed to the electrodes with a distance and so as to cover the opening; an insulation film provided between the deformable electrode film and the support member; and a reflection film provided on a face of the deformable electrode film opposite from the electrodes so as to overlap the opening. The electrodes are electrically insulated each other by a plurality of grooves radially extending from a region which includes a position corresponding to a center of the opening.

Deformable mirror device and apparatus for observing retina of eye using the same

A deformable mirror device includes a substrate; a plurality of electrodes provided on the substrate; a spacer disposed on the substrate; a support member disposed above the spacer and having an opening passing through from a first face of the support member facing to the substrate to a second face of the support member opposite from the first face; a deformable electrode film formed below the first face of the support member so as to be opposed to the electrodes with a distance and so as to cover the opening; an insulation film provided between the deformable electrode film and the support member; a reflection film provided on a face of the deformable electrode film opposite from the electrodes so as to overlap the opening; and a plurality of through holes passing through the reflection film and the deformable electrode film and disposed so as to overlap the opening.

Growing community of inventors

Tokyo, Japan

Hiroyuki Kawashima