Stanley Electric Co., Ltd

Ebara Corporation

Hitachi Automotive Systems, Ltd.

Kabushiki Kaisha Toshiba

Tohoku University

Hitachi, Ltd.

Nec Corporation

The Tokyo Electric Power Company, Incorporated

Chubu Electric Power Company, Inc.

The Chugoku Electric Power Co., Inc.

Tohoku Electric Power Company, Inc.

Kanagawa Academy of Science and Technology

Hokuriku Electric Power Company

The Japan Atomic Power Company

Tokyo Denpa Co., Ltd.

Hiroyuki Kato

Michihiro Sano

Tomofumi Yamamuro

Akio Ogawa

Shuichiro Honda

Chizu Saito

Takahiro Matsumoto

Takashi Enomoto

Naochika Horio

Hiroshi Kotani

Kazuya Hirata

Isao Umeda

Takafumi Yao

Yoshinori Ichinosawa

Meoung Whan Cho

Tetsuya Hiramatsu

Koichi Ohtake

Katsumi Maeda

Hiroshi Yoneyama

Kazuo Watanabe

Yasushi Watanabe

Hideaki Ohnishi

Seiji Tsuruta

Motohiko Nohmi

Kazufumi Tanaka

Hiroshi Masuhara

Kotaro Watanabe

Junji Matsuda

Tsuyoshi Asahi

Shotaro Tomita

Yasuo Okuno

Teruki Sugiyama

Isamu Oh

Kazuyoshi Taniguchi

Sen-ichi Ryo

Tsuyoshi Tomita

Shinichi Sato

Satoshi Okada

Tsutomu Ohkubo

Takaharu Ito

Akio Ishiguro

Tetsu Go

Masashi Tagomori

An ultraviolet ray emitting package includes: a substrate having an upper portion defining a recess; an ultraviolet ray emitting element provided within the recess of the substrate; an ultraviolet ray transmitting window member provided on the upper portion of the substrate to cover the recess of the substrate; a resin adhesive layer provided between the upper portion of the substrate and the ultraviolet ray transmitting window member; and an optical shielding layer provided between the resin adhesive layer and the ultraviolet ray transmitting window member.

Ultraviolet ray emitting package having resin adhesive layer and ultraviolet ray irradiating apparatus

There is provided an ultraviolet-emitting material that is formed so as to include MgZnO (0&#x3c;x&#x3c;0.55) with a rock-salt structure or BeMgZnCaO (0.45&#x2266;y+z&#x3c;1, 0&#x3c;x&#x2266;0.55) with a rock-salt structure.

Ultraviolet-emitting material and ultraviolet light source

A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9&#x2266;[11]/[13]&#x3c;100.

P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure

A variable valve actuation apparatus includes a lock pin slidably disposed in a slide bore formed in a rotor of a vane rotor, a retaining hole formed in an inner face of a sprocket, and a lock-hole structural member fixed and press-fitted into the retaining hole and configured to form the lock hole. The retaining hole is formed at the innermost peripheral side of the sprocket so as to face a central support bore of the sprocket. The inner end face of a large-diameter bore of the retaining hole is formed as a flat surface, whereas the outer end face of a lock-hole structural section of the lock-hole structural member is formed as a planar section. The lock-hole structural member is precisely positioned in its rotation direction by abutment between the flat inner end face and the planar outer end face.

Variable valve actuation apparatus of internal combustion engine

A valve timing control apparatus includes: a first passage which is formed in the vane rotor, which extends in the radial direction at a position apart from the first lock member and the second lock member in the circumferential direction, which includes an opening portion located in an outer end portion of the first passage, and which receives a hydraulic pressure different from a hydraulic pressure within the advance angle hydraulic chambers and a hydraulic pressure within the retard angle hydraulic chambers; a second passage which is connected to the first passage and hydraulic pressure receiving portions of the first lock member and the second lock member; and a seal member which is press-fit in the opening portion of the outer end portion of the first passage.

Valve timing control apparatus for internal combustion engine

A valve timing control apparatus including a housing, a vane rotor rotatable relative to the housing toward a phase-advance side and a phase-retard side, a first lock member and a second lock member disposed on the vane rotor, a first lock concave portion disposed on the housing so as to be engaged with a tip end portion of the first lock member, a second lock concave portion disposed on the housing so as to be engaged with a tip end portion of the second lock member, and a communication passage formed in the vane rotor and serving to always establish fluid communication between the first and second lock concave portions.

A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgZnO (0&#x2266;x&#x2266;0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgZnO (0&#x2266;x&#x2266;0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgZnO (0&#x2266;x&#x2266;0.6) layer co-doped with the Group 11 element and the Group 13 element.

Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure

A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure

In a hydraulic pressure circuit including an introduction section through which oil is introduced, a main passage section installed at a downstream side of the introduction section to be communicated with a supply section through which oil is supplied to each of slide sections of an internal combustion engine, a branch passage branched from the main passage section to supply oil to a hydraulic pressure actuator, and a control valve having a valve body which is moved in accordance with a pressure of an upstream side thereof, and a variable capacitance pump configured to drain oil to the introduction section, the variable capacitance pump is configured to vary a drained flow quantity in accordance with the drained pressure of oil and a pressure under which the oil drained flow quantity is started to be varied is higher than a pressure under which the valve body is started to move.

Apparatus having control valve and variable capacitance pump and hydraulic pressure circuit of internal combustion engine in which the same apparatus is used

In a valve timing control apparatus of an internal combustion engine, a first lock member is installed axially movably on either one of a housing and a vane member, a first lock recess section with which the first lock member is engaged when the vane member is relatively revolved at an intermediate phase position between most advance and retardation angle sides is installed on the other of the housing and the vane member, and a third lock recess section is installed at a retardation angle side in a circumferential direction of the housing with respect to the first lock recess section to limit a relative rotary position of the vane member at the most retardation angle side by an engagement of the first lock member with the third lock recess section.

Valve timing control apparatus of internal combustion engine

A valve timing control device comprises a drive rotation member driven by a crankshaft of an internal combustion engine; a driven rotation member fixed to a camshaft that actuates engine valves to open and close, the drive rotation member and driven rotation member being coaxially arranged to make a relative rotation therebetween; a phase varying mechanism that rotates the driven rotation member relative to the drive rotation member within a given angle, the phase varying mechanism being able to cause the driven rotation member to take the most-retarded phase position, the most-advanced phase position and a middle phase position defined between the most-retarded phase position and the most-advanced phase position; and a position keeping mechanism that is able to keep the driven rotation member at least the most-retarded phase position and the middle phase position at the time of starting the engine, and is able to select one of the most-retarded phase position and the middle phase position in accordance with an operation condition of the engine.

Valve timing control device of internal combustion engine

In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layerbetween a ZnO based n-type layerto which n-type dopants are doped and an active layeror a p-type layer. The diffusion barrier layerprevents diffusion of the n-type dopants to the active layeror the p-type layer. Crystalline quality of the active layerof the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.

Zinc oxide based compound semiconductor device

In a hydraulic system equipped with a main flow passage for feeding oil to each of lubricated engine parts and a branch passage branched from the main flow passage, a control valve apparatus is provided for adjusting a flow rate of the oil flowing through a portion of the main flow passage downstream of the branched point. The control valve apparatus is configured to control the flow rate to a large flow-rate side of a variable flow-rate range, until a hydraulic pressure of the oil flowing through the main flow passage becomes greater than or equal to a predetermined pressure value after the engine has been started from its stopped state. The control valve apparatus is further configured to control the flow rate to a small flow-rate side of the variable flow-rate range, when the predetermined pressure value has been reached.

Control valve apparatus

A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device

A method of producing water-insoluble anti-cancer drug in the form of particulates, the method including preparing a water-insoluble anti-cancer drug having at least one multiple bond in the structure, and irradiating said water-insoluble anti-cancer drug with a laser beam having a wavelength of a low absorption portion in the vicinity of the foot of an absorption curve on the long wavelength side within the absorption band until said water-insoluble anti-cancer drug is formed into particulates having an average particle diameter of 50 to 200 nm.

Water-insoluble medicine

Growing community of inventors

Yokohama, Japan

Hiroyuki Kato