Nitto-Denko Corporation

Sekisui Chemical Co., Ltd.

Eisai Company, Limited

Hiroyuki Katayama

Ryuichi Kimura

Haruka Fujii

Takashi Kondo

Munehisa Mitani

Takeharu Morita

Hirokazu Matsuda

Hiroshi Hiraike

Yuki Ebe

Yasunari Ooyabu

Toshitaka Nakamura

Shijun Zheng

Fumiyuki Ozawa

Kazuhiro Fuke

Ekambaram Sambandan

Kouji Akazawa

Hidenori Onishi

Hisataka Ito

Hironaka Fujii

Sazzadur Rahman Khan

Hiroshi Noro

Hideyuki Usui

Terukazu Ihara

Takuya Fukumura

Ichiro Suehiro

Noriaki Harada

Satoru Suzuki

Daisuke Tsukahara

Hiroki Kono

Shinya Nishiyama

Yasushi Ishihama

Koso Matsuda

Kensuke Tani

Jie Cai

Sergey Simavoryan

Nobuhiro Goto

Haruka Ona

Kazuya Fujioka

Toshikazu Takagi

Asami Kubo

Masafumi Nakatani

Shinsuke Wakiya

Hirofumi Fukutsuka

Provided is a carbon-dioxide capture and treatment system comprising: a carbon dioxide-enriched mixture gas generation device comprising a separation membrane capable of increasing a carbon dioxide concentration of a mixture gas taken therein, thereby generating a carbon dioxide-enriched mixture gas; a carbon dioxide conversion device configured to convert carbon dioxide in the enriched mixture gas received from the carbon dioxide-enriched mixture gas generation device, into a chemically stable compound; a final treatment device comprising an adsorbent, wherein the final treatment device is configured to adsorb the carbon dioxide by the adsorbent, thereby separating the carbon dioxide from other gas components; and a carbon dioxide direct capture device configured to take in air contained in an ambient environment, and supply the taken-in air to the final treatment device or an upstream side thereof in the carbon-dioxide capture and treatment system.

Carbon-dioxide capture and treatment system and carbon-dioxide negative emissions plant

A photocatalytic element including: a photocatalytic layer containing at least one photocatalytic material; and a light emitting source in optical communication with the photocatalytic material, the light emitting source disposed sufficiently proximal to the photocatalytic material to raise the surface temperature of at least some of the photocatalytic material to a temperature between 10&#xb0; C. and 90&#xb0; C. is provided.

Photocatalytic element

Described herein are devices for detecting the concentration of acetone gas. Some gas sensor devices comprise: a gas sensor element that includes a boron-doped the polycrystalline n-type semiconductor epsilon WO. In addition, multi-detector gas sensor elements are also described including at least one based on the aforementioned gas sensor element where the other elements differ in material properties. In addition, methods for detecting acetone gas based on the disclosed elements are also described.

Gas sensor element

A method for producing a phosphor layer-covered optical semiconductor element includes a step of opposing a phosphor layer containing a phosphor to an optical semiconductor element and an adjusting step of adjusting a color tone of light emitted from the optical semiconductor element and exited via the phosphor layer by adjusting the thickness of the phosphor layer.

Phosphor layer-covered optical semiconductor element, producing method thereof, optical semiconductor device, and producing method thereof

A light-emitting device includes a substrate including a mirror surface region on its upper surface, a semiconductor light-emitting element disposed in the mirror surface region, and an encapsulating layer joined onto the upper surface of the substrate. The encapsulating layer includes a lower layer that is in contact with the upper surface of the substrate, covers the surrounding of the semiconductor light-emitting element, and contains phosphor; and an upper layer that is positioned on the lower layer, and has a larger phosphor content per unit area than that of the lower layer.

Light-emitting device, lighting device, light-emitting device assembly, and method for producing light-emitting device

A silicone resin sheet is formed from a resin composition containing a thermosetting silicone resin and microparticles. The complex viscosity thereof at a frequency of 10 Hz is 80 to 1000 Pa&#xb7;s and the tan &#x3b4; thereof at a frequency of 10 Hz is 0.3 to 1.6 obtained by a dynamic viscoelastic measurement at a frequency of 0.1 to 50 Hz at 30&#xb0; C.; a rate of frequency increase of 10 Hz/min; and a distortion of 1% in a shear mode.

Silicone resin sheet, cured sheet, and light emitting diode device and producing method thereof

A method for producing an encapsulating layer-covered optical semiconductor element includes a disposing step of disposing an encapsulating layer at one side in a thickness direction of a support and a covering step of, after the disposing step, covering an optical semiconductor element with the encapsulating layer so as to expose one surface thereof to obtain an encapsulating layer-covered optical semiconductor element.

Encapsulating layer-covered optical semiconductor element, producing method thereof, and optical semiconductor device

A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board; disposing a semiconductor element at one side in a thickness direction of the support sheet; disposing an encapsulating layer formed from an encapsulating resin composition containing a curable resin at the one side in the thickness direction of the support sheet so as to cover the semiconductor element; curing the encapsulating layer to encapsulate the semiconductor element by the encapsulating layer that is flexible; cutting the encapsulating layer that is flexible corresponding to the semiconductor element to produce an encapsulating layer-covered semiconductor element; and peeling the encapsulating layer-covered semiconductor element from the support sheet.

Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device

An encapsulating sheet-covered semiconductor element includes a semiconductor element having one surface in contact with a board and the other surface disposed at the other side of the one surface and an encapsulating sheet covering at least the other surface of the semiconductor element. The encapsulating sheet includes an exposed surface that is, when projected from one side toward the other side, not included in the one surface of the semiconductor element and exposed from the one surface and the exposed surface has the other side portion that is positioned toward the other side with respect to the one surface of the semiconductor element.

Encapsulating sheet-covered semiconductor element and semiconductor device

A silicone resin composition includes (1) an organopolysiloxane having at least two alkenylsilyl groups in one molecule, (2) an organopolysiloxane having at least two hydrosilyl groups in one molecule, (3) a hydrosilylation catalyst, and (4) a curing retarder, wherein the curing retarder contains tetraalkylammonium hydroxide.

Silicone resin composition, silicone resin sheet, method for producing silicone resin sheet, and optical semiconductor device

An encapsulating sheet includes a transparent layer in which a concave portion that is dented from the surface inwardly is formed and a phosphor encapsulating layer which fills the concave portion. The transparent layer is formed from a transparent composition containing a first silicone resin composition and the phosphor encapsulating layer is formed from a phosphor encapsulating composition containing a phosphor and a second silicone resin composition.

Encapsulating sheet, light emitting diode device, and producing method thereof

A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

A method for producing a light-emitting diode device includes a step of preparing a sealing layer by sealing in a light-emitting diode with a sealing material; a step of preparing a fluorescent layer by allowing a phosphor-containing resin composition containing phosphor and silicone resin to reach its B-stage; and a step of bonding the fluorescent layer to the surface of the sealing layer.

Method for producing light-emitting diode device

The present invention relates to a composition for a thermosetting silicone resin including: a dual-end silanol type silicone oil; an alkenyl-containing silicon compound; an organohydrogensiloxane; a condensation catalyst; and a hydrosilylation catalyst, in which the condensation catalyst includes a tin complex compound.

Composition for thermosetting silcone resin

A silicone resin composition contains a cage octasilsesquioxane having a group represented by the following formula (1), an alkenyl group-containing polysiloxane containing an alkenyl group having a number of moles larger than that of a hydrosilyl group in the cage octasilsesquioxane, a hydrosilylation catalyst, and an organohydrogenpolysiloxane. 

Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device

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Osaka, Japan

Hiroyuki Katayama