Canon Kabushiki Kaisha

Hiroyuki Katagiri

Yoshio Segi

Yasuyoshi Takai

Hideaki Matsuoka

Tetsuya Takei

Ryuji Okamura

Toshiyasu Shirasuna

Hirokazu Ohtoshi

Kazuhiko Takada

Tetsuya Karaki

Shigeru Shirai

Satoshi Kojima

Toshiyuki Ehara

Hitoshi Murayama

Satoshi Takaki

Atsushi Yamagami

Hirokazu Otoshi

Koji Hitsuishi

Yoshio Seqi

Electrophotographic process and apparatus

A method of manufacturing an electrophotographic photosensitive member includes the steps of: cleaning a substrate of the electrophotographic photosensitive member by cleaning step using a vessel and machining the substrate. The cleaning step includes a first overflowing step and a second overflowing step. In the first overflowing step, the liquid is allowed to be overflowed from a vessel while the substrate of the electrophotographic photosensitive member is immersed in the liquid contained in the vessel. In the second overflowing step, the liquid is allowed to overflow from a vessel while the substrate of the electrophotographic photosensitive member is pulled up in the liquid contained in the vessel. A flow rate Q of the overflowing liquid of the second overflowing step is higher than a flow rate Q of the overflowing liquid of the first overflowing step. The machining step forms a film of a photosensitive substance on the substrate.

Method of manufacturing an electrophotographic photosensitive member including multiple liquid cleaning steps and machining step

A method for performing a cleaning process uses a cleaning gas and high-frequency power upon a film deposition apparatus for depositing a film on a substrate placed in a reactor chamber which can be evacuated to a low pressure. Supplying of high-frequency power is temporarily stopped in the middle of the cleaning process, and the cleaning process is restarted by again supplying high-frequency power. This method is capable of effectively removing by-products from the inside of a reactor chamber and makes it possible to form a high-quality deposition film, in particular, a high-quality electrophotographic photosensitive drum.

Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method

Plasma CVD apparatus and plasma processing method

The present invention provides a method of producing an electrophotographic photosensitive member capable of obtaining high-quality uniform images without image defects and nonuniformity in image density. The method of producing an electrophotographic photosensitive member includes a step forming a functional film on a substrate, and a washing step of spraying water on the substrate surface from concentrically arranged nozzle groups positioned in a twisted relationship before the step of forming the functional film.

Method and apparatus for producing electrophotographic photosensitive member

A method for manufacturing an electrophotographic photosensitive member in which an aluminum substrate is fitted on a substrate holder and a functional film comprising a non-monocrystalline material containing silicon atoms as the matrix is formed by low pressure chemical deposition on the surface of the substrate, which comprises surface of the substrate is cleaned with water in which carbon dioxide is dissolved, the substrate holder comprises a metal as the matrix and has formed ceramics at least on the inner surface. This method and a jig used therein make it possible to prevent fine image defects, thereby improving electrophotography characteristics, and to economically and stably manufacture electrophotographic photosensitive members which provide high quality images free from defects and unevenness.

Method for manufacturing electrophotographic photosensitive member and jig used therein

In a deposited film forming process or apparatus, a deposited film is formed on a film-forming substrate by reduced-pressure vapor phase growth. The film-forming substrate is set on an auxiliary substrate and an auxiliary-substrate cap member is set at the upper part thereof. A maximum temperature difference between temperature at the upper end of the film-forming substrate and the temperature at the lower end of the auxiliary-substrate cap member provided on the film-forming substrate at its upper part is so controlled as to be not greater than a prescribed value so that a film deposited on the auxiliary-substrate cap member is improved in adhesion. Any deposits of films on the part other than the film-forming substrate can be prevented from coming off and scattering on the film-forming substrate so that deposited films having uniform film thickness and film quality can steadily be formed and also faulty images can occur less frequently. It is also possible to achieve improvements of various properties of films formed, film forming rate, reproducibility, and productivity so that yield can dramatically be improved in mass production.

Deposited film forming process

A method for efficiently cleaning a cleaning subject, especially a method for cleaning an electrophotographic photosensitive member enables a uniform and high quality image to be obtained without leaving image defects and irregular images. The method includes a cleaning step during which the circulation flow rate during dipping of the cleaning subject in a cleaning solution is different from the circulation flow rate when the cleaning subject is pulled up, and where the cleaning solution is showered on the surface of the cleaning subject when it is pulled up. The cleaning method may be used in a method for manufacturing an electrophotographic photosensitive member for depositing a functional film by a plasma CVD method on a substrate.

Cleaning method and cleaning apparatus, and electrophotographic photosensitive member and cleaning method of electrophotographic photosensitive member

A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas-ejecting angle (a) of 45.degree..ltoreq.(a)&lt;90.degree. to a line which is passing through between said cylindrical substrate and each of said plurality of gas feed pipes.

Method for forming a deposited film by plasma chemical vapor deposition

To provide an electrophotographic photosensitive member manufacturing method capable of preventing a substrate from corroding in working of the substrate and obtaining a high-quality image free from image defects and image density unevenness, the method of manufacturing an electrophotographic photosensitive member comprises the step of forming a functional film made of an amorphous material on the surface of an aluminum substrate by reduced-pressure vapor deposition, wherein the surface of the substrate is cleaned with the water containing an inhibitor as a specific component before the step of forming an electrophotographic photosensitive member.

Method of manufacturing electrophotographic photosensitive member

Method and apparatus for producing electrophotographic photosensitive

For maintaining good cleanability even in use of low-melting-point or small-particle-diameter toner, thereby achieving a breakthrough improvement in the quality of image, the following conditions are satisfied:

Electrophotographic apparatus, image forming method, and process for

An electrophotographic light receiving member comprising a substrate in a cylindrical form and a light receiving layer formed on said substrate, wherein said substrate has (i) a portion with an enlarged bore at least on the side of an end portion of said substrate and (ii) a portion in a tapered form situated next to and outside said portion (i). An electrophotographic apparatus provided with said electrophotographic light receiving member.

Light receiving member, substrate for said light receiving member, and

A microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a plurality of Substrates which includes a substantially enclosed film-forming chamber comprising an outer wall having an end portion thereof provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, The film-forming chamber has a cylindrical discharge space encircled by a plurality of rotatable cylindrical substrate holders. Each of the cylindrical substrate holders has a substrate thereon. The cylindrical substrate holders are concentrically arranged in the film-forming chamber. The film forming chamber is provided with means for evacuating the film-forming chamber and means for supplying a raw material gas into the discharge space. The means for supplying the raw material gas comprises one or more gas feed pipes provided with a plurality of gas liberation holes capable of supplying a raw material gas radiately against each of the substrates. The gas feed pipes are longitudinally installed substantially at the center position of the discharge space.

Apparatus for preparing a functional deposited film by microwave plasma

A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer having a stacked structure comprising a plurality of constituent layers each being composed of a non-single crystal material containing silicon atoms as a matrix and at least either hydrogen atoms or halogen atoms, characterized in that said light receiving layer has a region containing at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms at an enhanced concentration distribution in the thickness direction in the vicinity of at least one layer interface of the light receiving layer.

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Nara, Japan

Hiroyuki Katagiri