Sanyo Electric Co., Ltd.

Hiroyuki Kase

Yasuyuki Bessho

Masayuki Shono

Ryoji Hiroyama

Shoji Honda

Toyozo Nishida

Takatoshi Ikegami

Takahiro Uetani

Junko Suzuki

A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a &lt;011&gt; direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

Semiconductor laser device with a misoriented substrate

On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.

Semiconductor laser device

Growing community of inventors

Osaka-fu, Japan

Hiroyuki Kase