Sumitomo Heavy Industries Ion Technology Co., Ltd.

Sen Corporation

Hiroyuki Kariya

Masaki Ishikawa

Takeshi Kurose

Noriyasu Ido

Takanori Yagita

Haruka Sasaki

Kazuhiro Watanabe

Toshio Yumiyama

Yuuji Takahashi

Masahide Ooura

Hideki Morikawa

Yoshiaki Inda

An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

Ion implanter and ion implantation method

A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

Ion implantation apparatus and measurement device

An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

Ion implantation method and ion implantation apparatus

An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field.

Ion implanter, magnetic field measurement device, and ion implantation method

An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.

Ion implanter, beam energy measuring device, and method of measuring beam energy

A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

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Ehime, Japan

Hiroyuki Kariya