Sharp Kabushiki Kaisha Corporation

Hiroyuki Kaigawa

Shinya Tanaka

Yoshiharu Kataoka

Shogo Nishiwaki

Shingo Kawashima

Yukihiko Nishiyama

Takayuki Urabe

Toru Daito

Provided is a method of manufacturing a semiconductor device which can form a high-performance photodiode in which variation in output characteristics and performance deterioration are suppressed. A prescribed gate metal is used to form a shield sectionthat covers a portion of a first semiconductor layerfor a photodiode that becomes an intrinsic semiconductor region on a gate insulating filmand to form first to fourth gate electrodestothat cover portions of respective second to fifth semiconductor layerstofor thin film transistors that become channel regions on the gate insulating film. Then, using the shield sectionas a mask, an n-type region and p-type region are formed in the first semiconductor layer. Then, the shield sectionis removed.

Method of producing semiconductor device

A display control substrate and a method of manufacturing thereof, includes a thin film transistor (TFT) that is provided for each of a multiplicity of pixel sections provided in two dimensions and is an inversely staggered TFT. A gate electrode wiring, a Cs wiring and a source electrode wiring of the TFT are simultaneously formed. An interlayer insulation film is deposited after gate insulation films and semiconductor islands are formed. After contact holes are formed in the interlayer insulation film, at the time of forming a pixel electrode, a connecting portion for connecting cut portions of the source electrode wirings via the contact hole is formed. The source electrode wiring is connected to a source region of the semiconductor island by the connecting portion. This process reduces the number of masks required at the time of manufacturing a TFT substrate, and also reduces the lead time, increases the yield and reduces the manufacturing cost.

Display control substrate, manufacturing method thereof, liquid crystal display panel, electronic information device

A method for manufacturing a semiconductor device, which includes the steps of: forming a mask layer () on a gate insulating film (), the mask layer () having openings over the portions of first and second semiconductor layers that are destined to become low-concentration impurity regions and source and drain regions; forming first conductivity type implantation regions () in the first and second semiconductor layers respectively by implanting a first conductivity type impurity () to the first and second semiconductor layers through the openings in the mask layer (); forming first and second gate electrodes () to cover a portion of the first conductivity type implantation regions and portions of the first and second semiconductor layers that are destined to become channel regions; forming another mask layer () which has openings over portions of the first conductivity type implantation region () of the first semiconductor layer, said portions being located at both ends of the first semiconductor layer, the entire second semiconductor layer, and a portion of a third semiconductor layer; and implanting the first conductivity type impurity into the first, second, and third semiconductor layers through the openings in the another mask layer ().

Semiconductor device and method for manufacturing same

A touch panel includes an insulating substrate, a transparent touch electrode provided on the insulating substrate, and a frame portion connected to a periphery of the touch electrode. The touch panel detects a touched position on the touch electrode based on an electric signal through the frame portion. The frame portion is provided between the insulating substrate and the touch electrode.

Touch panel, display device and touch panel manufacturing method

A switching element substrate for a liquid crystal display device for transmissive display includes an insulating substrate, and a plurality of switching elements formed on one of surfaces of the insulating substrate. A transmitting region is defined on an exposed part of the other surface of the insulating substrate. Each of the switching elements includes a monocrystalline silicon layer.

Growing community of inventors

Osaka, Japan

Hiroyuki Kaigawa