Hitachi, Ltd.

Japan Synthetic Rubber Co., Ltd.

Sumitomo Wiring Systems, Limited

Nissan Motor Company Limited

Sumitomo Wiring System, Ltd.

Hitachi Instrument Engineering Co., Ltd.

Hitachi Instruments Engineering Co., Ltd.

Hiroyuki Itoh

Yasunari Sohda

Hiroki Yamashita

Minoru Sasaki

Hideo Todokoro

Yoshinori Nakayama

Noboru Masuda

Akira Masaki

Tohru Kobayashi

Yutaka Hojyo

Tatsuya Saitoh

Yuji Tange

Kazuyoshi Oonuki

Takeshi Kato

Toshio Yamada

Yasuhiro Someda

Masayoshi Yagyu

Hirotoshi Tanaka

Atsumi Kawata

Mitsuo Usami

Masanori Suzuki

Norio Saitou

Atsushi Takai

Toshiyuki Usagawa

Keiichirou Nakanishi

Yuuji Fujita

Tsuneyo Chiba

Kazuhiro Yoshihara

Yasunari Umemoto

Hiroyuki Shinada

Hirotaka Nishizawa

Yasushi Takahashi

Haruo Yoda

Tatsuya Saito

Hideo Maejima

Shinichi Kato

Tadahiko Nishimukai

Shinji Okazaki

Satoru Isomura

Kenichi Mizuishi

Shigeru Abe

Hidetoshi Satoh

Masato Hamamoto

Ichiro Imaizumi

Masakazu Yamamoto

Kenji Nagai

Tateki Furuyama

Yoichi Kamoshida

Bunichi Fujita

Seiichi Kawashima

Moritoshi Yasunaga

Masahide Tokuda

Genya Matsuoka

Seiichi Atomori

Kazumitsu Nakamura

Masaaki Mawatari

Akira Kamiya

Katsuhiro Kawasaki

Hisao Nagai

Masahiro Hisatomi

Kenichi Hirane

Ryotaro Kamikawai

Yukiko Ito

Shuichi Ishii

Satoshi Hososaka

Masayoshi Yagyuu

Hajime Hayakawa

Atumi Kawata

Takeki Furuyama

Rieko Ishida

Koichi Sumi

Kazuo Miyamoto

Mitsuru Kawakita

Masaru Osanai

Yuji Kawai, Deceased

Keiichiro Nakanishi

It is an object of the present invention to reduce a number of deflection awaiting and a connection error between shots by scanning and exposing a formed beam having a large area. To achieve the object, a continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. According to this structure, the number of deflection awaiting and the connection error between shots are reduced and further, a high-speed and highly accurate drawing of a 45&deg; slanted figure is made possible.

Electron beam drawing apparatus and method of the same

An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Electron beam drawing process and electron beam drawing apparatus

An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be with a high throughput and with a high accuracy without any manual adjustment.

Electron beam drawing apparatus

A number of waiting deflections and a connection error between shots can be reduced by scanning and exposing a formed beam having a large area. A continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. Accordingly, the number of awaiting deflections and the connection error between shots are reduced. Further, a high-speed and highly accurate drawing of a 45.degree. slanted figure is made possible.

Electron beam drawing process

A structure for connecting an integrated circuit chip to a wiring substrate which implements high-density packaging, high-density connection, high-speed signal transmission, and low cost. An integrated circuit is connected to a wiring substrate by means of flip-chip die bonding using an adhesive film. A direct through-hole connection is formed directly below a connecting pad so as to pass through the adhesive film and the wiring substrate. This direct through-hole connection directly connects the connecting pad to the wire. As a result of reduced area and thickness of the chip, the chip is mounted in high density, and high-density inputs and outputs are implemented by means of minute two-dimensional connections. Short wire connections directly connected to the chip permit high speed signal transmission, and high reliability is ensured by the dispersion of stress. Low-cost packaging can be effected by simple processes and facilities.

Chip connection structure having diret through-hole connections through

A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center of the intensity of the shaped beam projected on the surface of the written target, a process for calculating a projected position correcting amount for correcting the projected position on the surface of the written target of the shaped beam based upon the measured point of the center of the intensity and a process for correcting the projected position on the surface of the written target of the shaped beam by the obtained projected position correcting amount. According to this method of correcting the projected position of the beam based upon the point of the center of the intensity of the shaped beam, a positioning error in a connection between the parts of patterns written on the surface of the written target can be greatly reduced.

Charged particle beam lithography method and apparatus thereof

An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.

Electron beam writing method and apparatus for carrying out the same

A laser marking resin composition excellent in appearance of molded article and impact resistance which comprises: (A) 100 parts by weight of a rubber-reinforced vinyl resin consisting of:

Laser marking resin composition

A flame retarding resin composition comprising 100 parts by weight of a specific rubber-reinforced resin, 1-200 parts by weight of a phenol resin, 1-200 parts by weight of an organic phosphorus compound, 1-50 parts by weight of a nitrogen-containing compound, 0-40 parts by weight of an oligomer-type polymer containing a functional group, 0-30 parts by weight of a metal compound, a silicon compound, and/or polytetrafluoroethylene, and 0-300 parts by weight of a styrene-type resin. The composition has high impact resistance, excellent heat resistance, and a superior self-fire-extinguishing characteristic.

Flame retarding resin composition

A semiconductor device may include a double hetero junction bipolar transistor and a field-effect transistor. The base of the bipolar transistor and the gate of the field-effect transistor are connected to each other to serve as an input terminal and the collector of the bipolar transistor and the drain of the field-effect transistor are connected to each other to serve as an output terminal. The bipolar transistor and the field-effect transistor may be created on a common substrate. In this case, both the bipolar and field-effect transistors can have the same multilayer/film structures.

Semiconductor device

The present invention provides a flame-retardant resin composition comprising 100 parts by weight of a bromine-containing copolymer composition containing 1 to 40% by weight of bromine, and comprising 0 to 30 parts by weight of a flame-retarding adjuvant and 0.5 to 30 parts by weight of a polyorganosiloxane-reinforced resin component obtained by polymerizing a vinyl monomer (d) in the presence of a polyorganosiloxane polymer. The flame-retardant resin composition of the present invention has attained a remarkably higher flame retardancy by the inclusion of a polyorganosiloxane-reinforced resin. A significant improvement in the dripping phenomenon has also been achieved. Further, this composition exhibits superior impact resistance and moldability, and a superior outer appearance in the formed products.

Flame-retardant resin composition

In signal transmission lines among logic circuits employed in a semiconductor integrated circuit device, a voltage driver circuit is provided with such a wiring whose length is short, and the function of the signal receiving circuit is achieved by a logic circuit capable of responding to a voltage appearing at a terminal of the wiring. On the other hand, a source terminal of such a wiring whose length is long and whose resistance is high, is voltage-driven by the voltage driver circuit in response to the output voltage of the logic circuit. A current sense circuit is provided with a terminal of this long length wiring, which senses a current flowing through this long length wiring to be converted into a voltage. Both an output resistance of the voltage driver circuit and an input resistance of the current sense circuit are made lower than a DC resistance of this long length wiring.

Integrated circuit device having different signal transfer circuits for

Growing community of inventors

Akigawa, Japan

Hiroyuki Itoh