Hitachi-high-technologies Corporation

Hitachi Metals, Ltd.

Hitachi, Ltd.

Sony Corporation

Hitachi Cable, Inc.

Tokyo Electron Limited

Japan Display Inc.

Stanley Electric Co., Ltd

Yamanouchi Pharmaceutical Company Ltd.

Japan Display West Inc.

Hitachi High-tech Corporation

Tokyo Institute of Technology

National Institute of Information and Communications Technology, Incorporated

Ishikawajima-harima Jukogyo Kabushiki Kaisha

Mitsubishi Heavy Industries Engine & Turbocharger, Ltd.

Hiroyuki Ito

Yasunari Sohda

Yoshinori Nakayama

Takahiro Futatsumori

Hirotaka Eshima

Yoshikazu Hayakawa

Yuko Sasaki

Yasuhiro Someda

Tomoyuki Murayama

Masahide Okumura

Hidetoshi Satoh

Naoya Toyoshima

Fumihito Oka

Toshiaki Matsuo

Takeyuki Kondo

Yasunari Sase

Muneyuki Fukuda

Masayoshi Kaneyasu

Masayuki Kamikawa

Kenichiro Oka

Masashi Tanto

Takafumi Kai

Koji Ishizaki

Shinichi Kato

Mitsugu Sato

Hajime Kawano

Takashi Doi

Daisuke Sonoda

Tadashi Otaka

Naomasa Suzuki

Takeshi Kawasaki

Sadao Kobayashi

Noritsugu Takahashi

Tatsuya Ide

Tomonori Nakano

Junichi Suzuki

Takeharu Takasawa

Teruyuki Hayashi

Mitsuaki Ohta

Hiroyuki Koshio

Yoshihide Wakayama

Hidekazu Seto

Misako Saito

Keiji Miyata

Naruyasu Okamoto

Kiyoshi Watanabe

Shoji Sato

Ryoichi Ishii

Hiroshi Suzuki

Koji Hashimoto

Tatsuya Inokuchi

Hiroshi Morita

Noriyuki Takahashi

Hideki Kaneko

Yoichi Ose

Tohru Ishitani

Takeshi Suzuki

Takashi Ohshima

Daisuke Sato

Sachio Suzuki

Takuya Aoyagi

Tadashi Fujieda

Yusuke Ominami

Hisaya Murakoshi

Sukehiro Ito

Eiji Kumagai

Hisashi Tanie

Shinya Hayashi

Yukio Shishido

Tatsuya Miyake

Kenji Tanimoto

Takashi Naitou

Satoshi Kitani

Satoshi Takada

Masashi Sakamoto

Hiromi Shimazu

Hiromi Inada

Masahiro Horiguchi

Kazuhiro Honda

Kunihiko Miyake

Tomohide Yamada

Tsutomu Kawamura

Kazuki Nishizawa

Ichiro Tachibana

Wataru Mori

Kotoko Hirose

Shinji Ohta

Atsuko Fukada

Fumio Shimizu

Shigeki Tsukatani

Tomofumi Shiraishi

Kenichi Kaneko

Soichiro Matsunaga

Manabu Yano

Kotoko Urano

Takashi Ichimura

Naoyuki Okamoto

Kazumitsu Nakamura

Yuichiro Yano

Yoshiya Higuchi

A decelerating electrode of an energy filter includes an electrode pair that has an opening and a cavity portion provided in a rotationally symmetrical manner with the center of the opening as the optical axis. Voltages with electric potentials that are substantially the same as that of a charged particle beam are independently applied to both sides of the decelerating electrode. When an electrical field protrudes into the cavity portion, a saddle point having the same electric potential as that of incident charged particles is formed inside the decelerating electrode. The saddle point acts as a high pass filter for incident charged particles at an energy resolution ofmV or less. By analyzing charged particles which have been energy-separated, it is possible to measure the energy spectrum and ΔE at the high resolution ofmV or less and to obtain an SEM/STEM image with a high resolution.

Energy filter, and energy analyzer and charged particle beam device provided with same

This atomic resonator for causing a resonance frequency by CPT resonance includes: a gas cell having alkali metal atoms enclosed; a photodetector configured to detect light having passed through the gas cell and convert the light to an electric signal; a high-frequency oscillator configured to receive the electric signal and output the signal after a frequency thereof is divided by two; and a laser light source configured to modulate and introduce, into the gas cell, light based on the signal output from the high-frequency oscillator. The high-frequency oscillator has an injection-locked frequency divider circuit including an acoustic resonator as an oscillation element.

Atomic resonator

Provided are a charged particle beam generator and a charged particle beam device that can improve insulation reliability as a result of reducing the high electric field generated around a connection section for a conductor. The charged particle beam generatorhas: a plugthat guides high voltage from outside to a charged particle source that is in a vacuum; and a sockethaving the charged particle source attached thereto. An electric field reduction ringthat electrically connects to one of a plurality of conductors that guide high voltage is embedded inside the tip of the plug. The plurality of conductors that guide the high voltage are arranged so as to penetrate the electric field reduction ring

Charged particle beam generator and charged particle beam apparatus

The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.

Semiconductor device and production method therefor

A sensor-equipped display device is provided including a display panel including a substrate, a sensor drive electrode, and a detection electrode opposed to the sensor drive electrode, wherein the detection electrode includes first and second layers in a first direction, the first layer has a first width in a second direction intersecting the first direction, the second layer has a second width in the second direction, the second width being wider than the first width, the first layer includes first lower and upper surfaces, the first upper surface being between the first lower surface and the second layer, the second layer includes a second lower surface located on the first upper surface, and a second upper surface opposed to the second lower surface, the second lower surface being between the second upper surface and the first layer, the second lower surface has a first region which is in contact with the first upper surface and a second region which is not in contact with the first upper surface, and the second region includes a part of an edge of the second lower surface.

Sensor-equipped display device and sensor device

A regeneration control device for an exhaust gas treatment device includes: a DOC blockage risk state determination part configured to determine whether the DOC is in a blockage risk state which is a state where blockage of the DOC is likely to occur, on the basis of comparison between a counter value and a threshold related to an operation time of the diesel engine; a DOC temperature increase execution part configured to execute a blockage recovery process for increasing a temperature of the DOC to a first temperature, if it is determined that the DOC is in the blockage risk state; a DPF forced regeneration condition determination part configured to determine whether a forced regeneration execution condition for the DPF is satisfied; a DPF forced regeneration execution part configured to execute a forced regeneration process for increasing a temperature of the DPF to a second temperature and increasing the temperature of the DOC to the first temperature, if the forced regeneration execution condition is satisfied; and a counter reset process part configured to reset the counter value after completion of the forced regeneration process by the DPF forced regeneration execution part.

Regeneration control device for exhaust gas treatment device

According to one embodiment, a sensor-equipped display device includes a display panel including a sensor drive electrode and a detection electrode opposed to the sensor drive electrode and a driver, wherein the detection electrode includes a first layer formed in a thin line shape, and a second layer on the first layer in a plan view of the display area, the second layer having a reflectivity lower than that of the first layer, the outer edge of a second lower surface of the second layer is shifted with respect to the outer edge of a first upper surface of the first layer in a plan view, and the outermost outer edge of the second layer is positioned outside the outermost outer edge of the first layer in a plan view.

A composite cable is composed of a twisted pair formed by twisting together one pair of first electric wires each including a first conductor and a first insulation covering an outer circumference of the first conductor, one pair of second electric wires each including a second conductor greater in cross sectional area than the first conductor and a second insulation covering an outer circumference of that second conductor, the second electric wire being greater in outer diameter than the first electric wire, and a sheath covering aggregates together formed by stranding together the twisted pair and the one pair of second electric wires. The first conductors are formed by stranding a plurality of metal wires together. The second conductors are formed by stranding a plurality of aggregated strands together formed by stranding a plurality of metal wires together.

Composite cable and wire harness

[Problem] Provided are a composite cable and a composite harness that allow the improvement of cable termination workability while maintaining the flex resistance. [Solution] A composite cableis provided with a pair of first electric wires, a twisted pair wireformed by twisting a pair of second electric wireshaving a smaller outer diameter than the first electric wiresand a tape memberspirally wound around an assembled articlethat is formed by twisting the pair of first electric wiresand the twisted pair wiretogether, wherein a twist direction of the twisted pair wireis different from a twist direction of the assembled article, and the twist direction of the assembled articleis different from a winding direction of the tape member

Composite cable and composite harness

In a capillary heating type thermal type mass flow meter comprising a sensor configured to detect temperature and pressure of a fluid and a correction means configured to correct a mass flow rate based on said temperature and said pressure, change rates of the mass flow rate of the fluid with respect to temperature and pressure have been previously acquired, and the mass flow rate is corrected based on said temperature and said pressure as well as these change rates. Thereby, the mass flow rate can be measured accurately and simply even when the temperature and/or pressure of the fluid, whose mass flow rate is to be measured, change.

Mass flow rate measurement method, thermal mass flow meter using said method, and thermal mass flow controller using said thermal mass flow meter

A mass flow controller includes a flow meter, a mechanical pressure-regulating valve disposed adjacent to and on an upstream side of the flow meter, and a flow control valve disposed on a downstream side of the flow meter. The mechanical pressure-regulating valve is embedded in a base of the mass flow controller. The mass flow controller also includes a compulsive valve-opening mechanism configured to compulsorily open the mechanical pressure-regulating valve. Thereby, the mass flow controller can instantly recover pressure on the upstream side of the flow meter to its original pressure even in a case where the pressure changes, and can raise measurement accuracy of a flow rate measured by the flow meter.

Mass flow controller

Provided is a multifunctional charged particle beam device capable of inclining a beam with little aberration. The aberration is corrected by forming a local divergent field with a multipole, parallel current lines, or the like, matching the beam axis with the local divergent field via a conventional rotationally symmetric lens, deflector or astigmatism corrector, and counteracting an aberration occurring from another rotationally symmetric convex lens field.

Charged particle beam device

A control operation of correcting, based on a difference between a target value and a measured value of a controlled response time, a standby time from change in a set value of a flow rate to a value that is not zero until start of output of an opening signal is repeated. As a result, a response time for the flow rate to reach the set value of the flow rate after the set value changes can be a desired value independently of a type, the set flow rate, the temperature, and the pressure of fluid, individual differences among devices, and the like. The difference between the target value and the measured value of the controlled response time may be multiplied by a weight coefficient, and the control operation may be carried out for each of a predetermined plurality of ranges of the flow rate.

Method for controlling flow rate of fluid, mass flow rate control device for executing method, and mass flow rate control system utilizing mass flow rate control device

The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.

Charged particle beam device, and method of manufacturing component for charged particle beam device

Growing community of inventors

Tokyo, Japan

Hiroyuki Ito