National Institute of Advanced Industrial Science and Technology

Sumitomo Chemical Company, Limited

The University of Tokyo

Hiroyuki Ishii

Masahiko Hata

Taro Itatani

Shinichi Takagi

Noboru Fukuhara

Tomoyuki Takada

Masafumi Yokoyama

Hisashi Yamada

Sadanori Yamanaka

Mitsuru Takenaka

Tetsuji Yasuda

Noriyuki Miyata

Yuji Urabe

Masao Shimada

Eiji Kume

Yoshiyuki Amano

There is provided a semiconductor wafer including a base wafer whose surface is entirely or partially a silicon crystal plane, an inhibitor positioned on the base wafer to inhibit crystal growth and having an opening that reaches the silicon crystal plane, a first crystal layer made of SiGe(0&#x2266;x&#x3c;1) and positioned on the silicon crystal plane that is exposed in the opening, a second crystal layer positioned on the first crystal layer and made of a III-V Group compound semiconductor that has a band gap width larger than a band gap width of the first crystal layer, and a pair of metal layers positioned on the inhibitor and the second crystal layer. The pair of the metal layers are each in contact with the first crystal layer and the second crystal layer.

Semiconductor wafer, semiconductor device, and method of producing semiconductor wafer

Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of InGaAsP(0&#x3c;x1&#x2266;1, 0&#x2266;y1&#x2266;1), the second semiconductor crystal layer is made of InGaAsP(0&#x2266;x2&#x2266;1, 0&#x2266;y2&#x2266;1, y2&#x2260;y1), and the electron affinity Eof the first semiconductor crystal layer is lower than the electron affinity Eof the second semiconductor crystal layer.

Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer

Growing community of inventors

Ibaraki, Japan

Hiroyuki Ishii