Nippon Sheet Glass Company, Limited

Hiroyuki Inomata

Yasuhiro Saito

Kazuhiro Doushita

Junji Kurachi

Kazuishi Mitani

Etsuo Ogino

Kenji Mori

Yoshifumi Kijima

Tetsuro Kawahara

Hiroaki Yamamoto

Mitsuhiro Kawazu

Hideshi Nagata

Yasuto Sakai

Hiroaki Tada

Shinji Kawamoto

Vladimir Victrovich Serikov

There are provided a method of processing an amorphous material which is capable of forming surface projections of uniform height in desired positions on the amorphous material, and a magnetic disk substrate using the amorphous material. A predetermined pressure is applied to selected parts of a surface of an amorphous material using fine particles having a hardness higher than that of the amorphous material to form high-density compressed layers, and a surface layer of the amorphous material is removed using a treatment agent that has a different removal capacity in the compressed layers and a remaining uncompressed layer, thus making the compressed layers project out. For example, the treatment agent may be an etching solution having a different etching rate in the compressed layers and the uncompressed layer.

Amorphous material processing method

A polarizing elementhas a first undulating structure in which a plurality of linear first recessesare formed parallel to one another in one surface of a transparent substrate, and a dielectric layermade from silicon dioxide is formed on the surface of the first undulating structure to produce a second undulating structure. The second undulating structure has formed therein second recesseshaving a width W and a depth H, with second projectionshaving a width d intervening between adjacent second recesses. A thin-film-shaped conductive bodyof width W and depth H is embedded in each of the second recesses

Polarizing device, and method for manufacturing the same

There are provided a method of processing an amorphous material which is capable of forming surface projections of uniform height in desired positions on the amorphous material, and a magnetic disk substrate using the amorphous material. A predetermined pressure is applied to parts of a surface of an amorphous material to form high-density compressed layers, and a surface layer of the amorphous material is removed using a treatment agent that has a different removal capacity in the compressed layers and a remaining uncompressed layer, thus making the compressed layers project out. For example, the treatment agent may be an etching solution having a different etching rate in the compressed layers and the uncompressed layer.

Amorphous material processing method and glass substrate

A surface of a glass plate is coated with a first n-type semiconductor film which is a 50 nm-thick niobium oxide film as a primer layer. The primer layer is coated with a 250 nm-thick photocatalyst film comprising titanium oxide. Thus, an article having a photocatalytically active surface is obtained. The two coating films can be formed by sputtering. The first n-type semiconductor film as the primer layer is selected so as to have a larger energy band gap than the titanium oxide. Due to this constitution, more holes are generated near the film surface. This article can be free from the problem of conventional titanium oxide films having photocatalytic activity that it is difficult to generate many surface holes contributing to photocatalytic activity, because electrons and holes generated by charge separation recombine within the film, making it impossible to effectively heighten catalytic activity.

Article having photocatalytic activity

A photocatalyst article exhibits high photocatalytic activity even in environments illuminated by weak ultraviolet light or visible light, expresses excellent anti-fogging and anti-soiling properties, and retains good anti-fogging and anti-soiling performance over long periods and therefore has a high utilization value as an anti-fogging, anti-soiling article. The photocatalyst article contains an oxide semiconductor and a compound which contains at least one type of element selected from the group comprised of Mg, Sc, V, Cr, Mn, Y, Nb, Mo, Ru, W, and Re, at a content such that the ratio (A/B) of the number of metal atoms of the abovementioned element (A) to the number of atoms of metal that comprise the abovementioned oxide semiconductor (B) will be about 0.20 to 2.

Photocatalyst article, anti-fogging, anti-soiling articles, and production method of anti-fogging, anti-soiling articles

A conductive sinter obtained from a mixture of titanium oxide particles and 2.5% by weight niobium oxide particles is used as a target in direct current sputtering to form a photocatalytically active film mainly comprising titanium oxide on a glass substrate. The target has a surface resistance of 500 &OHgr;/&square; or lower and the sputtering is conducted while heating the substrate at 230&deg; C. The photocatalytically active film is based on an amorphous matrix. This process is free from problems of a conventional process in which a photocatalytically active titanium oxide film is deposited by reactive sputtering using titanium metal as a target. The problems are that the substrate needs to be heated to 350&deg; C. or higher and that the deposited film does not have high photocatalytic activity.

Multilayer structure and process for producing the same

Silicon dioxide-coated polyolefin resin and process for its production

Growing community of inventors

Osaka, Japan

Hiroyuki Inomata