Tokyo Ohka Kogyo Co., Ltd.

Tokyo Ohka Kogyo., Ltd.

Hiroyuki Iida

Yoshio Hagiwara

Atsushi Matsushita

Kazuto Ohbuchi

Toshimasa Nakayama

Kazumasa Wakiya

Yasushi Fujii

Hiroki Endo

Isao Sato

Shigeru Yokoi

Takuya Ohhashi

Akimasa Nakamura

Hideya Kobari

Motoki Takahashi

Masaru Takahama

Masaharu Nakamura

Yueh Chun Liao

A solution including an organic solvent (S), and an antioxidant (A), in which an antioxidant (A) includes a tocopherol compound (A1).

Solution, method of forming resist pattern, and semiconductor device manufacturing method

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

Homogeneous coating solution and production method thereof, light-absorbing layer of solar cell and production method thereof, and solar cell and production method thereof

A composition for forming a silica-based coating film includes a siloxane polymer and an alkali metal compound. The siloxane polymer is preferably a hydrolysis-condensation product of a silane compound having a hydrolyzable group. Sodium, lithium, potassium, rubidium, or cesium, or the like is used as the alkali metal of the alkali metal compound. Furthermore, the alkali metal compound is preferably a nitrate, sulfate, carbonate, oxide, chloride, bromide, fluoride, iodide, or hydroxide of the above alkali metal. This composition for forming a silica-based coating film may also include a pore-forming material. At least one material selected from amongst polyalkylene glycols and alkyl-terminated derivatives thereof is used as the pore-forming material.

Composition for forming silica-based coating film

For suppressing decomposition of an organic group (for example, a CHgroup) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.

Method for forming multi-layer wiring structure

A method for processing a coating film includes the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a photoresist pattern, and processing the silica group coating film with plasma induced from helium gas. With this, it is possible to prevent the silica group coating film from being damaged when a wet stripping process is conducted to remove the photoresist pattern as a subsequent process, and to maintain the low dielectric constant of the coating film.

Method for processing coating film and method for manufacturing semiconductor element with use of the same method

For suppressing decomposition of an organic group (for example, a CH group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.

For suppressing decomposition of organic group (for example, CH group) during ashing process, which is bonded to Si atom of an organic SOG film or layer for use in flattening process, a method comprises following steps: forming an organic SOG layer directly or through a predetermined film including a hillock protection layer on said lower wiring layer; forming said upper wiring layer on said organic SOG layer without processing of etching back; forming a via hole through an etching process by using a patterned resist layer provided on said upper wiring layer as a mask; performing ashing process with a plasma by making ion or radical which is induced from oxygen gas as a main reactant, under an atmosphere of pressure ranging from 0.01 Torr to 30.0 Torr; and burying said via hole with conductive material so as to electrically connect between said lower wiring layer and said upper wiring layer.

A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.

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Kouza-gun, Japan

Hiroyuki Iida