Ricoh Company, Ltd.

Ricoh Research Institute of General Electronics Co., Ltd.

Kazuhiro Kudoh

Hiroyuki Iechi

Yoshikazu Akiyama

Takanori Tano

Hiroshi Kondoh

Toshiyuki Kabata

Tomohiro Inoue

Takashi Takahashi

Hirokazu Iwata

Yoshitaka Hayashi

Toshiyuki Ohsawa

Toshishige Fujii

Okitoshi Kimura

Takaaki Miyashita

Yoshiko Kurosawa

Noriaki Onodera

Nobuo Katagiri

Chizuru Yoshida, Legal Representative

Tomoaki Yoshida, Deceased

Shunichi Satoh

Yumiko Suzuki

Saburo Saski

An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Organic transistor

A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern, a second semiconductor layer formed over the second electrode and the first semiconductor layer, and a third electrode formed over the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are made of different semiconductor materials.

Vertical organic transistor

A negative electrode for a lithium secondary battery includes at least two kinds of carbon materials with a spacing of lattice plane (d.sub.002) of 3.4 .ANG. or less in the direction of the C axis thereof. A lithium secondary battery using this negative electrode is provided.

Negative electrode for lithium secondary battery and lithium secondary

A light emitting diode chip includes a substrate carrying thereon a number of light emitting diodes aligned in a row to form an array for producing a number of optical beams parallel to each other in a first direction, and monitoring element provided monolithically on the substrate for detecting the power of the optical beams produced by the light emitting diodes, wherein the monitoring element includes: a reference light emitting diode having a structure identical to the light emitting diodes in the array for producing an optical beam in a second direction perpendicular to the first direction; and a photodiode having a structure identical to the light emitting diodes in the array and separated from the reference light emitting diode by an isolation groove for detecting the optical beam produced by the reference light emitting diode.

Optical line printhead and an LED chip used therefor

A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.

Method of manufacturing a semiconductor light emitting device

Semiconductor light emitting device with terraced structure

A semiconductor light-emitting device includes a pair of clad layers and an active layer sandwiched thereby which together are disposed between a substrate and a cap layer so as to form a monolithic array of double-heterojunction regions each including therein a plurality of light-emitting portions of the active layer for emitting light from the end face thereof so that the light-emitting portions are arrayed in a row and electrically separated from each other. The substrate is formed at one side thereof with a concave and convex configuration following a stripe pattern so that the clad layers, active layers and the cap layers are each arranged in the form of a corrugated configuration following the concave and convex configuration of the substrate. According to the corrugated configuration of the active layer between said clad layers, one of the clad layers has portions which are each disposed between respective two successive light-emitting portions of the active layer along an array line thereof, so that when at least two successive light-emitting portions are activated to emit light, these successive light-emitting portions are also photo-coupled to each other through the corresponding portion of the clad layer disposed therebetween.

Semiconductor light-emitting device of array type

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Sendai, Japan

Hiroyuki Iechi